• Proceedings of the KIEE Conference
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• 1989.07a
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• pp.295-298
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• 1989

Using the anisotropic etching characteristics or $N_2H_4-H_2O$ solution, Si diaphragm was fabricated for the integrated sensor. The optimal composition and temperature of the solution in Si etching process was established to be 50mol% $N_2H_4$ in water at $105{\pm}2^{\circ}C$ for both higher etch rate(=$2.6{\mu}m/min$) and better surface quality of etched {100} planes. Under the optimal etching condition, the electrochemical etch stop technique was employed to form Si diaphragm for pressure sensor and diaphragm thickness was exactly controlled to $20{\pm}2{\mu}m$.

• 연구논문집
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• s.34
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• pp.121-129
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• 2004

The influence of powder size and ball-milling time on the magnetic properties of $Fe_{73}Si_{16}B_7Nb_3Cu_1$ nanocrystalline alloy powder was investigated. Flake-shaped powders were produced by pulverizing the ribbons annealed at $550^\circC$ for 1 hour. The powders were classified and consolidated into core shapes at a pressure of 18ton/$cm^2$. The initial permeability at 100kHz of the inductor core produced using $53-75\mum$ powders showed the highest value although its consolidated density showed the lowest one. The reason for the result is due to the cracking of the particles larger than $75\mum$ during the consolidation process. The ball-milling of powders for 2-4 hours improved the consolidation density and the initial permeability of the cores. The intrinsic coercivity of the powder decreased as well, resulting from the stress relief of the powder by a short-time milling.

• JSTS:Journal of Semiconductor Technology and Science
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• v.8 no.3
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• pp.232-238
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• 2008

In this paper, a wideband power efficient 2.2 GHz - 4.9 GHz Medium Power Amplifier (MPA), has been designed and fabricated using $0.8{\mu}m$ SiGe BiCMOS process technology. Passive elements such as parallel-branch spiral inductor, metal-insulator-metal (MIM) capacitor and three types of resistors are all integrated in this process. This MPA is a two stage amplifier with all matching components and bias circuits integrated on-chip. A P1dB of 17.7 dBm has been measured with a power gain of 8.7 dB at 3.4 GHz with a total current consumption of 30 mA from a 3 V supply voltage at $25^{\circ}C$. The measured 3 dB bandwidth is 2.7 GHz and the maximum Power Added Efficiency (PAE) is 41 %, which are very good results for a fully integrated Medium PA. The fabricated circuit occupies a die area of $1.7mm{\times}0.8mm$.

• Journal of Surface Science and Engineering
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• v.25 no.5
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• pp.215-221
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• 1992

This research is aimed at developing(110) preferred TiS2 cathode films and glass typed solid electro-lytes which have high ionic migrations and low electron conductivities for thin secondary solid batteries. To obtain preferred oriented TiS2 thin films on a substrate by CVD method using TiCl4 and H2S gases three factors of heating temperature, inner pressure of furnace and TiCl4/H2S gas mole fraction were ex-amined systematically. To obtain solid films of Li2O-B2O3-SiO2 electrolytes by r.f. sputtering for thin proto-type batteries of Li/Li2O-B2O3-SiO2TiS2, sputtering conditions were examined. TiS2 cathode films showed columnar structure, namely c axis oriented parallely. At low pressure of reaction chamber and low heating temperature, surface of smooth TiS2 films couldd be obtained. Ionic conductivity of Li2O-B2O3-SiO2 films manufactured by r.f. magnetron sputtering were 3$\times$10-7$\Omega$-1cm-1 and electron conductivities were 10-11$\Omega$-1cm-1. Open cell voltage of thin lithium batteries were 2.32V with a designed prototype cell.

• Korean Journal of Materials Research
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• v.10 no.1
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• pp.49-54
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• 2000

The new green $Al_3GdB_4O_{12}:Tb^{3+} and red Al_3GdB_4O_{12}:Eu_{3+}$ phosphors were synthesized and then characterized their optical properties for PDP application. And also the photoluminescence properties of these phosphors were compared with the commercial green $Zn_2SiO_4:Mn^{2+} and (Y,Gd)BO_3: Eu^{3+}$ red PDP phosphors. The phosphors were synthesized by solid state reaction at 115$0^{\circ}C$ for 4hr. It was found that the emitting brightness of $Al_3GdB_4O_{12}:Tb^{3+}$(15mol%) green phosphor under 147nm excitation was higher than that of commercial $Zn_2SiO_4: Mn^{2+}$ green PDP phosphor. However, the color coordinate of this new green phosphor was inferior to the commercial one. On the other hand, the emitting intensity of $Al_3GdB_4O_{12}:Eu^{3+}$(15mol%) red phosphor was smaller than the $commercial(Y,Gd)BO_3: Eu^{3+}$ red one, but the CIE coordinate was slightly improved. The excitation spectrum showed that $Al_3GdB_4O_{12}$ phosphors had a strong excitation band at $\lambda=160nm$ associated with the host absorption. And the photoluminance excitation (PLE) intensity in VUV range for $Al_3GdB_4O_{12}:Tb^{3+}$ green phosphor was higher than that of $Zn_2SiO_4: Mn^{2+}$, but the PLE intensity of $Al_3GdB_4O_{12}:Eu^{3+}$ red phosphor was smaller than $(Y,Gd)BO_3: Eu^{3+}$.

• Korean Journal of Microbiology
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• v.30 no.5
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• pp.339-346
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• 1992

These studies were carried out to identify Bacillus cereus group 1..5-] strain isolated from 5uyeong Bay. This strain was differentiated from B. cereus group using conventional, API system and fatty acid composition analysis. Colony characteristics were opague. mucoid, entire margin. convex. circular and non hemolysis on sheep blood agar plates, and were observed with central spore forming positive bacilli in a Gram stained preparation. and had no motility. The carbohydrates tested; glucose.maltose, and sucrose were assimilated but neither trehalose nor salicin were assimilated. This strain ultilized gelatin and was also inhibited by 6.5% NaCI. The results of biochemical examination were differented from B. cereus group LS-1 compared with others B. cereus group. The fatty acid composition contained major amounts of branched chain acids. iso $C_{15}$ and iso $C_{13}$ and the range of chain length was $C_{12}$ to C"$C_{17}$ and n$C_{15}$, acid was not detected. Automated fatty acid computer profile indicated "B. mycoides GC subgroup B of 0.312 similarity index." The results agreed with other research cases. On the other hand. A TB computer prolile index of API system (API 50 CHB & API 20E) identified" Doubtful profile of 99.7% B. firmus" . These results were presented with considerable discrepancies between API system and fatty acid analysis. With 67 biochemical characters. the similarity matrix of B. mycaides (KCTC 1033). B. thuringiensis (KCTC 1033). B. cereus (5-3) and B. mycoides (S-12) showed 42%. 42%. 59%, and 52%. respectively. Through the key tests and fatty acid analyses. we could notice the appearance of B. mycoides of the B. cereus group and this leads us to suspect the existence of a new biotype B. mycoides.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.51 no.11
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• pp.526-530
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• 2002

The $(Sr_{0.9}Ca_{0.1})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The composition of SCT thin film deposited on Si substrate at room temperature is close to stoichiometry(1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by ammealing at $600^{\cric}C$. The temperature dependence of dielectric loss showed a value within 0.02 in temperature ranges of -80 ${\sim}$ +90$^{\circ}C$. The capacitance characteristics showed a stable value within ${\pm}$4%. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films was observed at the frequency above 200kHz.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.9
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• pp.14-23
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• 2010

This paper reports the fabrication of a DVB-T/H System in Package (SiP) that is able to receive and process the DVB-T/H signal. The DVB-T/H is the European telecommunication standard for Digital Video Broadcasting (DVB). An IC-embedded Printed Circuit Board (PCB) process, interpose a chip between PCB layers, has applied to the DVB-T/H SiP. The chip inserted in DVB-T/H SiP is the System on Chip (SoC) for mobile TV. It is comprised of a RF block for DVB-T/H RF signal and a digital block to convert received signal to digital signal for an application processor. To operate the DVB-T/H IC, a 3MHz DC-DC converter and LDO are on the DVB-T/H SiP. And a 38.4MHz crystal is used as a clock source. The fabricated DVB-T/H SiP form 4 layers which size is $8mm{\times}8mm$. The DVB-T/H IC is located between 2nd and 3rd layer. According to the result of simulation, the RF signal sensitivity is improved since the layout modification of the ground plane and via. And we confirmed the adjustment of LC value on power transmission is necessary to turn down the noise level in a SiP. Although the size of a DVB-T/H SiP is decreased over 70% than reference module, the power consumption and efficiency is on a par with reference module. The average power consumption is 297mW and the efficiency is 87%. But, the RF signal sensitivity is declined by average 3.8dB. This is caused by the decrease of the RF signal sensitivity which is 2.8dB, because of the noise from the DC-DC converter.

• Proceedings of the IEEK Conference
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• 2000.06b
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• pp.24-27
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• 2000

Ferroelectric P $b_{0.99}$〔(Z $r_{0.6}$S $n_{0.4}$)$_{0.9}$ $Ti_{0.1}$〕$_{0.98}$N $b_{0.02}$ $O_3$(PNZST) thin films were deposited by a RF magnetron sputtering on (L $a_{0.5}$S $r_{0.5}$)Co $O_3$(LSCO)/Pt/Ti/ $SiO_2$/Si substrate using a PNZST target with excess PbO of 10 mole％. The thin films deposited at the substrate temperature of 500 $^{\circ}C$ were crystallized to a perovskite phase after rapid thermal annealing(RTA) The thin films annealed at 650 $^{\circ}C$ for 10 seconds in air exhibited the good crystal structures and ferroelectric properties. The remanent polarization and coercive field of the PNZST capacitor were about 20 $\mu$C/$\textrm{cm}^2$ and 50 kV/cm, respectively. The reduction of the polarization after 2.2$\times$10$^{9}$ switching cycles was less than 10 ％.0 ％.％.0 ％.0 ％.

• Journal of Korea Foundry Society
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• v.31 no.5
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• pp.262-266
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• 2011

The aim of this study is to investigate aging behavior of A356 alloy for turbo charger part. The specimen was fabricated by investment casting. Solution heat treatment was performed at $525^{\circ}C$ for 8h and followed by aging treated at $160^{\circ}C$, $170^{\circ}C$ for 0.5~20h. And their microstructures and mechanical properties of the aged specimens were analyzed by scanning electron microscope and hardness tester, respectively. All the cast A356 alloy included eutectic Si particles. In the cast A356 alloy, eutectic Si phase mainly was formed along Chinese script phase. Vickers hardness of the cast was improved by aging treatment due to formation of ${\beta}$" phase and ${\beta}$' phase.