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http://dx.doi.org/10.5573/JSTS.2008.8.3.232

Enhanced fT and fMAX SiGe BiCMOS Process and Wideband Power Efficient Medium Power Amplifier  

Bae, Hyun-Cheol (RF Circuit Group, IT Convergence & Components Laboratory(ICCL), Electronics and Telecommunications Research Institute)
Oh, Seung-Hyeub (National University of Chungnam)
Publication Information
JSTS:Journal of Semiconductor Technology and Science / v.8, no.3, 2008 , pp. 232-238 More about this Journal
Abstract
In this paper, a wideband power efficient 2.2 GHz - 4.9 GHz Medium Power Amplifier (MPA), has been designed and fabricated using $0.8{\mu}m$ SiGe BiCMOS process technology. Passive elements such as parallel-branch spiral inductor, metal-insulator-metal (MIM) capacitor and three types of resistors are all integrated in this process. This MPA is a two stage amplifier with all matching components and bias circuits integrated on-chip. A P1dB of 17.7 dBm has been measured with a power gain of 8.7 dB at 3.4 GHz with a total current consumption of 30 mA from a 3 V supply voltage at $25^{\circ}C$. The measured 3 dB bandwidth is 2.7 GHz and the maximum Power Added Efficiency (PAE) is 41 %, which are very good results for a fully integrated Medium PA. The fabricated circuit occupies a die area of $1.7mm{\times}0.8mm$.
Keywords
SiGe; BiCMOS; MPA; inductor; capacitor;
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1 Song YJ, Shim KH, Kang JY, and Cho KI, "DC and RF characteristics of Si0.8Ge0.2 MOSFETs enhanced operation speed and low 1/f noise," ETRI Journal, 25, pp.203-209, 2003   DOI   ScienceOn
2 A. Zolfaghari, A. Chan, and B. Razavi, "Stacked Inductors and Transformers in CMOS Technology," IEEE J. Solid-State circuits, Vol.36, No.4, pp.620-628, April 2001   DOI   ScienceOn
3 Dong Min Kang, Hong Gu Ji, Ho Kyun Ahn, Jae Kyung Mun, and Hae Cheon Kim, "A 2-stage 5 GHzband MMIC Power Amplifier for WLAN using a 0.5 ${\mu}m$ PHEMT Process," The 18th International Technical Conference on Circuits/Systems, Computers and Communications(ITC-CSCC), pp.693-695, 2003
4 W. Bakalski, W. Simburger, R. Thuringer, A. Vasylyev, and A. L. Scholtz, "A fully integrated 5.3 GHz, 2.4 V, 0.3 W SiGe-Bipolar Power Amplifier with 50 $\Omega$ output," European Solid-State Circuits Conference (ESSCIRC), pp.561-564, 2003
5 Hyun-Cheol Bae, Sang-Hoon Kim, Ja-Yol Lee, Jin-Young Kang, Sang-Heung Lee, and Hyun-Kyu Yu, "Cost Effective Parallel-branch Spiral Inductor with Enhanced Quality Factor and Resonance Fre quency," Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems(SiRF), pp.87-90, Jan 2007
6 Chan-Woo Park, Seung-Yun Lee, Sang-Hoon Kim, and Jin-Young Kang, "Effects of high-doze $BF_2\;^+$ implantation on the formation of Ti-germonosilicide on polycristalline $Si/Si_{0.87}Ge_{0.13}/Si$ layers," Journal of Vaccum Science and Technology, 2003
7 R. Goezfried, F. Beisswanger, S. Gerlach, A. Schueppen, H. Dietrich, U. Seiler, K.-H. Bach, and J. Albers, "RFIC's for mobile communication systems using SiGe bipolar technology," IEEE Transactions on Microwave Theory and Techniques, Vol.46, pp. 661-668, May 1998   DOI   ScienceOn
8 John D. Cressler, "SiGe HBT Technology : A New Contender for Si-Based RF and Microwave Circuit Applications," IEEE Transactions on Microwave Theory and Techniques, Vol.46, pp.572-589, May 1998   DOI   ScienceOn