Properties with Annealing Temperature of ![]() |
So, Byung-Moon
(益山大 電氣科)
Cho, Choon-Nam (光云大 電氣工學科) Shin, Cheol-Gi (光云大 電氣工學科) Kim, Jin-Sa (光云大 電氣工學科) Kim, Chung-Hyeok (光云大 電氣工學科) |
1 | Shigeru waku et al., 'Classification and Dielectrics of the Boundary Layer Ceramic Dielectrics', Rev. Elect. Commun. Lab., Vol.19, pp.665-679, 1971 |
2 | J. S. Kim, I. H. Jung, C. H. Kim et al., 'ELECTRICAL PROPERTIES OF SCT THIN FILMS PREPARED BY RF MAGNETRON SPUTTERING', Proceeding of 1998 ISEIM, pp.143-146, 1998 DOI |
3 | S. B. Desu, 'Stresses in Ferroelectric Thin Films', MRS Symposium Proceeding, Vol.200, pp.199. 1990 |
4 |
K. Fujimoto, Y. Kobaashi, and K. Kubata, 'Growth of |
5 | E. N. Bunting, G. R. Shelton and A. S. Creamer, 'Properties of Barium-Strontium Titanate Dielectric,' J. Am. Cerm. Soc., Vol.30(4), pp.114-25, 1947 DOI |
6 | ニュケラスシリ-ス 編輯委員會 編, '半導體 セラミクスと その 應用', ニュケラス 7, 學獻社, pp.222-227, 1990 |
7 | A. N. Gubkin, A. J. Kashtanova, G. I. Skanavi, 'Dielectric Properties of Strontium Bismuth Titanates at Low Temperature', Fiz. Tverd. Teia., Vol.34, pp.1110-1116, 1961 |
8 |
H. E. Weaver, 'Dielectric Properties of Single Crystals of |
9 | J. M. Herbert, 'Ceramic Dielectrics and Capacitors', Gordon and Breach Science Publishers, pp.202-209, 1985 |
10 |
R. Wernicke, 'Two-Layer Model Explaining the Properties of |
11 |
SUSUMU NISHIGAKI, KANJI MURANO et al., 'Dielectric Properties of Ceramics in the system |
12 | D. W. Hoffman, and J. A. Thorton, 'Internal Stresses in Cr, Mo, Ta, and Pt Films Deposited by Sputtering from a Planar Magnetron Sources', J. Vac. Sci.&Technol., Vol.20(3), pp.355-358, 1982 DOI |
13 |
S. Matsubara, S. Miura, Y. Miyasaka, and N. Shohata, 'Preparation of epitaxial |
14 |
L. A. KNAUSS, J. S. HORWITZ, J. M. POND et al, 'DIELECTRIC PROPERTIES OF |
15 |
Po-ching CHEN, Hiroshi MIKI, Yasuhiro SHIMAMOTO et al., 'Effects of Post-Annealing Temperatures and Ambient Atmospheres on the Electrical Properties of Ultrathin (Ba,Sr) |
![]() |