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Properties with Annealing Temperature of $(Sr_{0.9}Ca_{0.1})TiO_{3}$ Ceramic Thin Film  

So, Byung-Moon (益山大 電氣科)
Cho, Choon-Nam (光云大 電氣工學科)
Shin, Cheol-Gi (光云大 電氣工學科)
Kim, Jin-Sa (光云大 電氣工學科)
Kim, Chung-Hyeok (光云大 電氣工學科)
Publication Information
The Transactions of the Korean Institute of Electrical Engineers C / v.51, no.11, 2002 , pp. 526-530 More about this Journal
Abstract
The $(Sr_{0.9}Ca_{0.1})TiO_3(SCT)$ thin films were deposited on Pt-coated electrode (Pt/TiN/$SiO_2$/Si) using RF sputtering method. The composition of SCT thin film deposited on Si substrate at room temperature is close to stoichiometry(1.081 in A/B ratio). The maximum dielectric constant of SCT thin film was obtained by ammealing at $600^{\cric}C$. The temperature dependence of dielectric loss showed a value within 0.02 in temperature ranges of -80 ${\sim}$ +90$^{\circ}C$. The capacitance characteristics showed a stable value within ${\pm}$4%. The drastic decrease of dielectric constant and increase of dielectric loss in SCT thin films was observed at the frequency above 200kHz.
Keywords
Thin Film; Substrate; Annealing; Dielectric Constant; Dielectric loss;
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