$N_2H_4-H_2O$ 용액의 최적 시작 조건을 이용한 Si diaphragm의 제작

Fabrication or Si Diaphragm using Optimal Etching Condition of $N_2H_4-H_2O$ Solution

Using the anisotropic etching characteristics or $N_2H_4-H_2O$ solution, Si diaphragm was fabricated for the integrated sensor. The optimal composition and temperature of the solution in Si etching process was established to be 50mol% $N_2H_4$ in water at $105{\pm}2^{\circ}C$ for both higher etch rate(=$2.6{\mu}m/min$) and better surface quality of etched {100} planes. Under the optimal etching condition, the electrochemical etch stop technique was employed to form Si diaphragm for pressure sensor and diaphragm thickness was exactly controlled to $20{\pm}2{\mu}m$.