• Journal of Sensor Science and Technology
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• v.5 no.1
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• pp.63-70
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• 1996

Silicon epitaxial films of submicron level were successfully grown by the RTCVD method. For the growth of silicon epitaxial layers, $SiH_{2}Cl_{2}\;/\;H_{2}$ gas mixtures and various process parameters including $H_{2}$ prebake process were used. The growth conditions were varied to investigate their effects on the interface abruptness of doping profile, the film growth rates and crystalline properties. The crystallinity of the undoped silicon was excellent at the growth temperature of $900^{\circ}C$. The doping profiles were measured by SIMS technique. The abruptness of doping profile would be controlled within about $200{\AA}/decade$ in the structure of undoped Si / $n^{+}-Si$ substrate.

• Korean Journal of Crystallography
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• v.1 no.1
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• pp.49-56
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• 1990

The crystallizied Inactions of the two metastable phases in the glasses of plagioclase compositions were estimated by x-ray diffraction method. The orthorhombic metastable phase is easily drystaliized in the composition range of 70 to 80 mol% of albite, whereas the hexagonal metastable phase is mostly crystallized in the anonhite-rich side. For the purpose of refining the orthorhombic metastable structure some single crystal fragments of the composition Na,17ca‥‥All Isi2 nn were separated Som the crystallized glasses. The cell parameters of this crystal are a=8.237(1)A. b=8.644(1)A c=4.818(1)A. The space group of this crystal is Pn,2, Final atomic coordinates give R value of 0.040 and Rw of 0.028 with anisotropic thermal parameters. The position of Na and Ca atoms statistically distributed is splitted in two points with the occupancy of 0.5. The Si and Al atoms are statistically distributed in the six-membered ring of the Immm-type framework.

• Journal of the Korean Vacuum Society
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• v.19 no.2
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• pp.148-154
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• 2010

We have fabricated $SiO_2$ oxidation thin films by TCP-CVD (transformer coupled plasma chemical vapor deposition) method for passivation layer of OLED (organic light emitting diode). The purpose of this paper is to control and estimate the deposition rate and refracive index characteristics with process parameters. They are power, gas condition, distance of source and substrate and process temperature. The results show that transmittance of thin films is over 90%, rapid deposition rate and stable reflective index from 1.4 to 1.5 at controled process conditions. They are $SiH_4$ : $O_2$ = 30 : 60 [sccm] gas condition, 70 [mm] distance of source and substrate, no-biased substrate and under 80 [$^{\circ}C$] process temperature.

• Composites Research
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• v.22 no.4
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• pp.50-53
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• 2009

This paper mainly describes the armor materials, especially the ceramic materials for the personal protection. In the ceramic armor materials, B4C ceramics and SiC ceramics are the most popular materials. The $B_4C$ ceramics which consists of 4 atoms of boron and I atom of carbon is very light and strong. It is usually used to personal protection armor and chair protection in the helicopter. This material must be sintered at very high temperature because it melts at $2400^{\circ}C$. In order to have a good armor property, it must have very high density which is achieved by hot press or subsidiary sintering aid methods such as reducing the particle size of raw materials or mixing the sintering agents to the raw materials.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.46-51
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• 2003

Ferroelectric $Sr_{0.7}Bi_{2.1}Ta_{2.0}O_9$ thin films with 200 nm thicknesses were deposited on $Pt/Ti/SiO_2/Si$ substrate by liquid delivery MOCVD process. In these experiments, $Sr(TMHD)_2{\cdot}pmdeta,\; Bi(ph)_3$ and $Ta(O^i/Pr)_4(TMHD)$ were used as precursors, which were dissolved in n-butyl acetate and pentamethyldiethylenetriamine. Substrate temperature and reactor pressure of this experiment was $570^{\circ}C$and 5 Torr, respectively. The remanent polarization value (2Pr) of SBT thin film with annealed at $780^{\circ}C$was$7.247{\mu}C/cm^2$and$8.485 {\mu}C/cm^2$by applying 3 V and 5 V, respectively.

• Journal of Powder Materials
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• v.16 no.4
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• pp.249-253
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• 2009

3-D shape soft magnetic composite parts can be formed by general compaction method of powder metallurgy. In this study, the results on the high density nanostructured Fe-Si/Fe composite prepared by a warm compaction method were presented. Ball-milled Fe-25 wt.%Si powder, pure Fe powder and Si-polymer were mixed and then the powder mixture was compacted at various temperatures and pressures. Pore free density of samples up to 95% theoretical value has been obtained. The warm compacted sample prepared at 650 MPa and 240$^{\circ}C$ had highest compaction properties in comparison with other compacts prepared at 300, 400 MPa and room temperature and 120$^{\circ}C$. The magnetic properties such as core loss, magnetization saturation and coercivity were measured by B-H curve analyzer and vibration sample magnetometer.

• Journal of Applied Biological Chemistry
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• v.64 no.3
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• pp.225-236
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• 2021

The epipyrone (EPN) biosynthetic gene cluster of Epicoccum nigrum is composed of epnC, epnB, and epnA, which encode cytochrome P450 oxidase, glycosyltransferase, and highly reducing polyketide synthase, respectively. Gene inactivation mutants for epnA, epnB, and epnC were previously generated, and it was found that all of them were incapable of producing EPN and any of its related compounds. It was also reported that epnB inactivation abolished epnA transcription, generating ΔepnAB. This study shows that the introduction of native epnC readily restored EPN production in ΔepnC, suggesting that epnC is essential for polyketide release from EpnA and implies that EpnC works during the polyketide chain assembly of EpnA. Introduction of epnC promoter-epnA restored EPN production in ΔepnA. The ΔepnB genotype was prepared by introducing the epnA expression vector into ΔepnAB, and it was found that the resulting recombinant strain did not produce any EPN-related compounds. A canonical epnB inactivation strain was also generated by deleting its 5'-end. At the deletion point, an Aspergllus nidulans gpdA promoter was inserted to ensure the transcription of epnA, which is located downstream of epnB. Examination of the metabolite profile of the resulting ΔepnB mutant via LC-mass spectrometry verified that no EPN-related compound was produced in this strain. This substantiates that C-glycosylation by EpnB is a prerequisite for the release of EpnA-tethered product. In conclusion, it is proposed that cytochrome P450 oxidase and glycosyltransferase work in concert with polyketide synthase to generate EPN without the occurrence of any free intermediates.

• Journal of the Korea Concrete Institute
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• v.21 no.5
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• pp.557-563
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• 2009

This study is on the properties of inorganic porous calcium silicate material made from silica powder through the autoclaving curing, the results of this study should be utilized fundamental data for the development of noise reduction porous solid material using siliceous byproduct generated by various manufacture process. For the manufacture of autoclave curing specimen, various calcareous materials used and siliceous materials used silica powder. In this study, properties in density and compressive strength according to the change of W/B and C/S ratio, microscopy for the shape of pore, SEM and XRD for the examination of hydrate after autoclave curing are carried out respectively. The test results shown that the more slurry density decrease, the more W/B increase at the fresh state, this tendency shown similar to in hardened state. Among the specimens of C/S ratio, the compressive strength of C/S ratio of 0.85 gave the highest the compressive strength. In the results of XRD, tobermorite generated by autoclaving curing was created all of specimens regardless of C/S ratio. To ascertain pore structure, we compared with existing porous calcium silicate product(ALC, organic sound absorbing porous material). The results of microscope observation, pore structure of specimen of this study was similar to that of existing inorganic sound absorbing foam concrete. therefore, we could conformed a possibility of sound absorbing porous solid material on the basis of the results.

• Bulletin of the Korean Chemical Society
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• v.31 no.5
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• pp.1349-1354
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• 2010

The geometries and isomerization of the alkylidene silylenoid $H_2C$ = SiLiF as well as its insertion reactions with R-H (R = F, OH, $NH_2$) have been systematically investigated at the B3LYP/6-311+$G^*$ level of theory. The potential barriers of the three insertion reactions are 97.5, 103.3, and 126.1 kJ/mol, respectively. Here, all the mechanisms of the three reactions are identical to each other, i.e., an intermediate has been formed first during the insertion reaction. Then, the intermediate could dissociate into the substituted silylene ($H_2C$ = SiHR) and LiF with a barrier corresponding to their respective dissociation energies. Correspondingly, the reaction energies for the three reactions are -36.4, -24.3, and 3.7 kJ/mol, respectively. Compared with the insertion reaction of $H_2C$ = Si: and R-H (R = F, OH and $NH_2$), the introduction of LiF makes the insertion reaction occur more easily. Furthermore, the effects of halogen (F, Cl, Br) substitution and inorganic salts employed on the reaction activity have also been discussed. As a result, the relative reactivity among the three insertion reactions should be as follows: H-F > H-OH > H-$NH_2$.

• Journal of IKEEE
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• v.26 no.4
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• pp.728-735
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• 2022

In this work, we investigated a high-voltage (~4.5 kV) 4H-SiC power DMOSFET with modifications of current spreading layer (CSL), which was introduced below the p-well region for low on-resistance. These include the following: 1) a thickness of CSL (T_CSL) from 0 um to 0.9 um; 2) a doping concentration of CSL (N_CSL) from 1×10¹⁶ cm^-3 to 5×10¹⁶ cm^-3. The design is optimized using TCAD 2D-simulation, and we found that CSL helps to reduce specific on-resistance but also breakdown voltage. The resulting structures exhibit a specific on-resistance (R_on,sp) of 59.61 mΩ·cm², a breakdown voltage (V_B) of 5 kV, and a Baliga's Figure of Merit (BFOM) of 0.43 GW/cm².