Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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Fabrication of Oxidative Thin Film with Process Conditions by Transformer Coupled Plasma Chemical Vapor Deposition

TCP-CVD법을 활용한 공정변수에 따른 산화막의 제작

  • Gim, T.J. (Electrical Engineering, Inha University) ;
  • Choi, Y. (Atech System Co.) ;
  • Shin, P.K. (Electrical Engineering, Inha University) ;
  • Park, G.B. (Electrical Engineering, Yuhan College) ;
  • Shin, H.Y. (Electronic Engineering, Namseoul University) ;
  • Lee, B.J. (Electronic Engineering, Namseoul University)
  • Received : 2010.01.31
  • Accepted : 2010.03.25
  • Published : 2010.03.30
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Abstract

We have fabricated $SiO_2$ oxidation thin films by TCP-CVD (transformer coupled plasma chemical vapor deposition) method for passivation layer of OLED (organic light emitting diode). The purpose of this paper is to control and estimate the deposition rate and refracive index characteristics with process parameters. They are power, gas condition, distance of source and substrate and process temperature. The results show that transmittance of thin films is over 90%, rapid deposition rate and stable reflective index from 1.4 to 1.5 at controled process conditions. They are $SiH_4$ : $O_2$ = 30 : 60 [sccm] gas condition, 70 [mm] distance of source and substrate, no-biased substrate and under 80 [$^{\circ}C$] process temperature.

본 논문에서는 유기발광다이오드의 보호막 적용을 위하여 TCP-CVD를 이용한 실리콘 산화막 형성에서 산화막의 특성에 영향을 미치는 Power, 가스종류 및 유량, 소스와 기판거리 및 공정온도 등의 공정조건에 따른 증착된 산화막의 특성을 나타내는 증착률, 굴절률을 제어하고자 한다. 그 결과 $SiH_4$ : $O_2$ = 30 : 60 [sccm], 70 [mm]의 source와 기판 거리, Bias를 인가하지 않은 조건에서 80 [$^{\circ}C$] 이하의 공정온도를 보였으며 투과율 90% 이상, 높은 증착률 및 굴절률 1.4~1.5인 안정된 $SiO_2$ 산화박막을 제조할 수 있었다.

Keywords

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