• The Transactions of the Korean Institute of Electrical Engineers C
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• v.48 no.1
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• pp.51-56
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• 1999

This paper presents a new transient overvoltage blocking device (TOBD) for info-communication facilities with low power and high frequency bandwidth. Conventional protection devices have some problems such as low frequency bandwidth, low energy capacity and high remnant voltage. In order to improve these limitations, thehybrid type TOBD, which consists of a gas tube, avalanche diodes and junction typefield effect transistors (JFETs), was designed and fabricated. The TOBD differs from the conventional protection devices in configuration, and JFETs were used as an active non-linear element and a high speed switching diode with low capacitance limits high current. Therefore the avalanche dilde with low energy capacity are protected fromthe high current, and the TOBD has a very small input capacitance. From the performance test using combination surge generator, which can produce $1.2/50\mus\;4.2kV_{max}\; 8/20\mus\; 2.1kA_{max}$, it is confirmed that proposed TOBD has an excellent protection performance in tight clamping voltage and limiting current characteristics.

• 한국초전도학회:학술대회논문집
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• v.16
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• pp.44-44
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• 2006

• Journal of Multimedia Information System
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• v.7 no.2
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• pp.165-174
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• 2020

This document outlines a new color image encryption technology development. After splitting the original image into 240-bit blocks and modifying the first block by an initialization vector, an improved Feistel circuit is applied, sponsored by a genetic crossover operator and then strong chaining between the encrypted block and the next clear block is attached to set up the confusion-diffusion and heighten the avalanche effect, which protects the system from any known attack. Simulations carried out on a large database of color images of different sizes and formats prove the robustness of such a system.

• Journal of IKEEE
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• v.26 no.3
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• pp.373-379
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• 2022

In this paper, since the APD(Avalanche Photo Diode) for LTV(Light to Voltage) conversion uses a high voltage in the operating range unlike other PD(Photo Diode)s, the quenching resistor must be connected in series to prevent overcurrent when using the TIA(Transimpedance Amplifier). In such a case, quenching resistance may affect the transfer function of the TIA circuit, resulting in serious stability. Therefore, in this paper, by analyzing the effect of APD quenching resistance on the voltage and current loop transfer function of TIA, we propose a loop analysis and a method for determining the quenching resistance value to improve stability. TIA circuit with quenching resistance was designed by the proposed method and the stability of operation was verified through simulation and chip fabrication.

• Journal of the Korea institute for structural maintenance and inspection
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• v.26 no.6
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• pp.128-138
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• 2022

In this study, in order to apply ultra-high-strength concrete beams of 100 MPa or more manufactured by centrifugal molding as the superstructure of the avalanche tunnel, the purpose is to verify the structural safety of the corner rigid joint in which the centrifugal molded beam is integrated with the substructure, which is the negative moment area. A full-size specimen was manufactured, and loading tests and analysis studies were performed. In order to expect the same effect that the maximum moment occurs in the corner joint part of the upper slab end when the standard model of the avalanche tunnel is designed with a load combination according to the specification, a modified cantilever type structural model specimen was manufactured and the corner rigid joint was fixedly connected. A study was performed to determine the performance of the method and the optimal connection construction method. The test results demonstrated that the proposed connection system outperforms others. Despite having differences in joint connection construction type, stable flexural behavior was shown in all the tested specimens. The proposed method also outperformed the behavior of centrifugally formed beams and upper slabs. The behavior of the corner rigid joint analysis model according to the F.E. analysis showed slightly greater stiffness compared to the results of the experiment, but the overall behavior was almost similar. Therefore, there is no structural problem in the construction of the corner rigid joint between the centrifugally formed beam and the wall developed in this study.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.40 no.9
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• pp.638-643
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• 2003

Channel width dependence of hot-carrier effect in nMOSFET with shallow trench isolation is analyzed. $I_{sub}$- $V_{G}$ and $\Delta$ $I_{ㅇ}$ measurement data show that MOSFETs with narrow channel-width are more susceptible to the hot-carrier degradation than MOSFETs with wide channel-width. By analysing $I_{sub}$/ $I_{D}$, linear $I_{D}$- $V_{G}$ characteristics, thicker oxide-thickness at the STI edge is identified as the reason for the channel-width dependent hot-carrier degradation. Using the charge-pumping method, $N_{it}$ generation due to the drain avalanche hot-carrier (DAHC) and channel hot-electron (CHE) stress are compared. are compared.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.7
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• pp.1033-1041
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• 1990

In this paper, under pinch-off conditions, the gate-drain breakdown voltage characteristics of GaAs Power MESFET's as a function of device parameters such as channel thickness, doping concentration, gate length etc. are analyzed. Using the Green's function, the gate ionic charge induced by the depleted channel ionic charge is calculated. The impact ionization integral by avalanche multiplication between gate and drain is used to investigate breakdown phenomena. Especially, the localized excess surface charge effect as well as the uniform surface charge effect on breakdown voltage is considered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.450-453
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• 1999

In this paper, The relationship between device performance and channel length(1.5-50$\mu$m) in polysilicon thin-film transistors fabricated by SPC technology was Investigated by measuring electric Properties such as 1-V characteristics, field effect mobility, threshold voltage, subthreshold swing, and trap density in grain boundary with channel length. The drain current at ON-state increases with decreasing channel length due to increase of the drain field, while OFF-state current (leakage current) is independent of channel length. The field effect mobility decrease with channel length due to decreasing carrier life time by the avalanche injection of the carrier at high drain field. The threshold voltage and subthreshold swing decrease with channel length, and then increase in 1.5 $\mu$m increase of increase of trap density in grain boundary by impact ionization.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.2116-2118
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• 2000

In the technique of Q-switching, very fast electronically controlled optical shutters can be made by using the electro-optic effect in crystals or liquids. The driver for the Pockels cell must be a high-speed, high-voltage switch which also must deliver a sizeable current. Common switching techniques include the use of vacuum tubes, cold cathode tubes, thyratrons, SCRs, and avalanche transistors. Semiconductor devices such as SCRs, avalanche transistors, and MOSFETs have been successfully employed to drive Pockels cell Q-switch. In this study, a simple driver for the Pockels cell Q-switch was developed by using SCRs, pulse transformer and TTL ICs. The Pockels cell Q-switch which was operated by this driver was employed in pulsed Nd:YAG laser system to investigate the operating characteristics of this Q-switch. And we have investigated the output characteristics of this Q-switch as a function of the Q-switch delay time to Xe flashlamp current on.

• Journal of The Institute of Information and Telecommunication Facilities Engineering
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• v.4 no.2
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• pp.19-27
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• 2005

In this paper, we propose 128-bit chaotic block encryption scheme using a PLCM (Piecewise Linear Chaotic Map) having a good dynamical property. The proposed scheme has a block size of 128- bit and a key size of 128-bit. The encrypted code is generated from the output of PLCM. We show the proposed scheme is very secure against statistical attacks and have very good avalanche effect and randomness properties.