Browse > Article

A Study on the Channel-Width Dependent Hot-Carrier Degradation of nMOSFET with STI  

이성원 (이화여자대학교 정보통신학과)
신형순 (이화여자대학교 정보통신학과)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.40, no.9, 2003 , pp. 638-643 More about this Journal
Abstract
Channel width dependence of hot-carrier effect in nMOSFET with shallow trench isolation is analyzed. $I_{sub}$- $V_{G}$ and $\Delta$ $I_{ㅇ}$ measurement data show that MOSFETs with narrow channel-width are more susceptible to the hot-carrier degradation than MOSFETs with wide channel-width. By analysing $I_{sub}$/ $I_{D}$, linear $I_{D}$- $V_{G}$ characteristics, thicker oxide-thickness at the STI edge is identified as the reason for the channel-width dependent hot-carrier degradation. Using the charge-pumping method, $N_{it}$ generation due to the drain avalanche hot-carrier (DAHC) and channel hot-electron (CHE) stress are compared. are compared.
Keywords
Hot-carrier effect; Shallow trench isolation; interface state;
Citations & Related Records
연도 인용수 순위
  • Reference
1 W. Lee, H. Hwang, 'Hot carrier degradation for narrow width MOSFET with shallow trench isolation,' Microelectronics Reliability, Vol. 40, p. 49-56, 2000   DOI   ScienceOn
2 S. Chung, S. Chen, W. Yang, and J. Yang, 'A New Physical and Quantitative Width Dependent Hot Carrier Model for Shallow -Trench- Isolated CMOS Devices,' IEEE OICH37167. 39th Annual International Reliability Physis Symposium, Oriando, Florida, pp. 419- 424, 2001
3 W. Sun and H. Shin, 'New Method to Extract the Lateral Profile of Hot-Carrier-Induced Nits by Using the Charge Pumping Method,' J. of the Korean Physical Society, Vol. 40, pp. 636-641, 2002
4 E. Takeda, 'Hot-Carrier Effects in MOS Devices,' Academic Press, San Diego, 1995
5 S. Tagaki, A. Toriumi, and H. Tango, 'On the Universality of Inversion Layer Mobility in Si MOSFET's: Part Ⅰ- Effects of Substrate Impurity Concentration,' IEEE Trans. on Electron Devices, ED-41, pp. 2357-2362, 1994
6 Y. Lee, T. Linton, K. Wu and N. Mielke, 'Effect of trench edge on pMOSFET reliability,' Microelectronics Reliability. Vol. 41, p. 689-696, 2001   DOI   ScienceOn