Journal of the Institute of Electronics Engineers of Korea SD (대한전자공학회논문지SD)

The Institute of Electronics and Information Engineers (대한전자공학회)
권호 표지

A Study on the Channel-Width Dependent Hot-Carrier Degradation of nMOSFET with STI

STI구조를 갖는 nMOSFET의 채널 너비에 따른 Hot-Carrier 열화 현상에 관한 연구

  • 이성원 (이화여자대학교 정보통신학과) ;
  • 신형순 (이화여자대학교 정보통신학과)
  • Published : 2003.09.01
Download PDF
⟨ Previous Next ⟩

Abstract

Channel width dependence of hot-carrier effect in nMOSFET with shallow trench isolation is analyzed. $I_{sub}$- $V_{G}$ and $\Delta$ $I_{ㅇ}$ measurement data show that MOSFETs with narrow channel-width are more susceptible to the hot-carrier degradation than MOSFETs with wide channel-width. By analysing $I_{sub}$/ $I_{D}$, linear $I_{D}$- $V_{G}$ characteristics, thicker oxide-thickness at the STI edge is identified as the reason for the channel-width dependent hot-carrier degradation. Using the charge-pumping method, $N_{it}$ generation due to the drain avalanche hot-carrier (DAHC) and channel hot-electron (CHE) stress are compared. are compared.

Keywords

References

  1. W. Lee, H. Hwang, 'Hot carrier degradation for narrow width MOSFET with shallow trench isolation,' Microelectronics Reliability, Vol. 40, p. 49-56, 2000 https://doi.org/10.1016/S0026-2714(99)00222-X
  2. Y. Lee, T. Linton, K. Wu and N. Mielke, 'Effect of trench edge on pMOSFET reliability,' Microelectronics Reliability. Vol. 41, p. 689-696, 2001 https://doi.org/10.1016/S0026-2714(01)00002-6
  3. S. Chung, S. Chen, W. Yang, and J. Yang, 'A New Physical and Quantitative Width Dependent Hot Carrier Model for Shallow -Trench- Isolated CMOS Devices,' IEEE OICH37167. 39th Annual International Reliability Physis Symposium, Oriando, Florida, pp. 419- 424, 2001
  4. W. Sun and H. Shin, 'New Method to Extract the Lateral Profile of Hot-Carrier-Induced Nits by Using the Charge Pumping Method,' J. of the Korean Physical Society, Vol. 40, pp. 636-641, 2002
  5. E. Takeda, 'Hot-Carrier Effects in MOS Devices,' Academic Press, San Diego, 1995
  6. S. Tagaki, A. Toriumi, and H. Tango, 'On the Universality of Inversion Layer Mobility in Si MOSFET's: Part Ⅰ- Effects of Substrate Impurity Concentration,' IEEE Trans. on Electron Devices, ED-41, pp. 2357-2362, 1994