• Title/Summary/Keyword: Au film

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Mechanical characterization of 100 nm-thick Au thin film using strip bending test (띠 굽힘 시험을 통한 100 nm 두께 금 박막의 기계적 특성 평가)

  • Kim, J.H.;Lee, H.J.;Han, S.W.;Baek, C.W.;Kim, J.M.;Kim, Y.K.
    • Proceedings of the KSME Conference
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    • 2004.04a
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    • pp.252-257
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    • 2004
  • Nanometer-sized structures are being applied to many devices including micro/nano electronics, optoelectronics, quantum devices, MEMS/NEMS, biosensors, etc. Especially, the thin film with submicron thickness is a basic structure for fabricating these devices, but its mechanical behaviors are not well understood. The mechanical properties of the thin film are different from those of the bulk structure and are difficult to measure because of its handling inconvenience. Several techniques have been applied to mechanical characterization of the thin film, such as nanoindentation test, micro/nano tensile test, strip bending test, etc. In this study, we focus on the strip bending test because of its high accuracy and moderate specimen preparation efforts, and measure Au thin film, which is a very popular material in micro/nano electronic devices. Au film is deposited on Si substrate by evaporation process, of which thickness is 100nm. Using the strip bending test, we obtain elastic modulus, yield and ultimate tensile strength, and residual stress of Au thin film.

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The effect of annealing temperature and Ta layer on the electric conductivity of Au thin film deposited by the magnetron sputtering (마그네트론 스퍼터링법으로 증착한 Au 박막의 전기전도특성에 미치는 열처리 온도와 Ta 삽입층의 영향)

  • Choi, Hyeok-Cheol;You, Chun-Yeol
    • Journal of the Korean Vacuum Society
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    • v.16 no.6
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    • pp.433-438
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    • 2007
  • We fabricated thin films of Au and Ta/Au with thicknesses of 30 nm and 5 nm/30nm, respectively on Si(100) or Si(111) substrates using a dc magnetron sputtering system. Grain sizes, roughness and conductivity for Au thin films are measured as a function of the annealing temperatures. We observed that the grain size of samples enlarged and the surface became rougher with increasing annealing temperature. The grain size and roughness were improved in the structure of Si/Ta/Au than Si/Au. Furthermore, the Si(100) substrate was more effective for decreasing the resistance for Ta/Au system than Si(111) substrate. We confirm that by inserting a Ta buffer layer in Si(100)/Au, surface roughness was reduced and by adjusting the annealing temperature the grain size were enlarged. Consequently, the Au thin-film has improved conductivity.

Study on Reliability of Vapor Cell by Laser Packaging with Au/Au-Sn Heterojunction (Au/Au-Sn 이종접합 적용 레이저 패키징을 통한 Vapor Cell 신뢰성 연구)

  • Kwon, Jin Gu;Jeon, Yong Min;Kim, Ji Young;Lee, Eun Byeol;Lee, Seong Eui
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.5
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    • pp.367-372
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    • 2020
  • As packaging processes for atomic gyroscope vapor cells, the glass tube tip-off process, anodic bonding, and paste sealing have been widely studied. However, there are stability issues in the alkali metal which are caused by impurity elements and leakage during high-temperature processes. In this study, we investigated the applicability of a vapor cell low-temperature packaging process by depositing Au on a Pyrex cell in addition to forming an Au-Sn thin film on a cap to cover the cell, followed by laser irradiation of the Au/Au-Sn interface. The mechanism of the thin film bonding was evaluated by XRD, while the packaging reliability of an Ne gas-filled vapor cell was characterized by variation of plasma discharge behavior with time. Furthermore, we confirmed that the Rb alkaline metal inside the vapor cell showed no color change, indicating no oxidation occurred during the process.

Synthesis and characterization Au doped TiO2 film for photocatalytic function

  • Son, Jeong-Hun;Bae, Byung-Seo;Bae, Dong-Sik
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.25 no.6
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    • pp.280-284
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    • 2015
  • Au doped $TiO_2$ nanoparticles have been synthesized using a reverse micelle technique combined with metal alkoxide hydrolysis and condensation. Au doped $TiO_2$ was coated with glass substrate. The size of the particles and thickness of the coating can be controlled by manipulating the relative rates of the hydrolysis and condensation reaction of TTIP within the micro-emulsion. The average size of synthesized Au doped $TiO_2$ nanoparticle was about in the size range of 15 to 25 nm and the Au particles formed mainly the range of 2 to 10 nm in diameter. The effect of synthesis parameters, such as the molar ratio of water to TTIP and the molar ratio of water to surfactant, are discussed. The synthesized nanopaticles were coated on glass substrate by a spin coating process. The thickness of thin film was about 80 nm. The degradation of MB on a $TiO_2$ thin film was enhanced over 20 % efficiency by the incorporation of Au.

Properties of Nano-sized Au Particle Doped ZrO2 Thin Film Prepared by the Sol-gel Method (졸-겔법에 의한 나노 사이즈 Au 미립자 분산 ZrO2 박막의 특성)

  • 이승민;문종수
    • Journal of the Korean Ceramic Society
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    • v.40 no.12
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    • pp.1197-1201
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    • 2003
  • Thin film on SiO$_2$ glass was synthesized by a dip-coating method from the ZrO$_2$ sol which had dispersed nanosize Au particle under ambient atmosphere. After heat treatment of the prepared thin film, the characteristics were investigated by X-ray diffraction, UV-VIS spectrometer, Atomic Force Microscopy (AFM), Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM). It was found that ZrO$_2$ thin film with 100 nm thickness was crystallized to tetragonal phase at 50$0^{\circ}C$. The size of dispersed Au particle was 15∼40nm and the film had a smooth surface with a roughness of 0.84 nm. The film showed nonlinearity characteristics with absorption peaks at 630∼670nm visible region because of the plasma resonance of Au metallic particles.

Stretchable Deformation-Resistance Characteristics of Metal Thin Films for Stretchable Interconnect Applications II. Characteristics Comparison for Au, Pt, and Cu Thin Films (신축 전자패키지 배선용 금속박막의 신축변형-저항 특성 II. Au, Pt 및 Cu 박막의 특성 비교)

  • Park, Donghyun;Oh, Tae Sung
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.3
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    • pp.19-26
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    • 2017
  • Stretchable deformation-resistance characteristics of Au, Pt, and Cu films were measured for the stretchable packaging structure where a parylene F was used as an intermediate layer between a PDMS substrate and a metal thin film. The 150 nm-thick Au and Pt films, sputtered on the parylene F-coated PDMS substrate, exhibited the initial resistances of $1.56{\Omega}$ and $5.53{\Omega}$, respectively. The resistance increase ratios at 30% tensile strain were measured as 7 and 18 for Au film and Pt film, respectively. The 150 nm-thick Cu film, sputtered on the parylene F-coated PDMS substrate, exhibited a very poor stretchability compared to Au and Pt films. Its resistance was initially $18.71{\Omega}$, rapidly increased with applying tensile deformation, and finally became open at 5% tensile strain.

Au Thin Film Fabrication of <111> Crystal Structure by Effusion Cell Process (Effusion Cell 방식에 의한 <111> 결정구조의 Au 박막의 제작)

  • Pyo Kyung Soo;Kim Kand Dae;Kim Yong Gu;Song Chung Kun
    • Proceedings of the IEEK Conference
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    • 2004.06b
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    • pp.383-386
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    • 2004
  • The one of important requisites for fabricating molecular electronic device is the single crystal direction of bottom substrate nowadays. [1,2]. We obtain the optimum SAM result when the Au crystal is <111> structure for Self-Assembled molecular. To get the <111> crystal Au, we generally repeat heating and cooling course after evaporating Au [3]. However, we can fabricate <111> crystal Av thin film except post treatment because we simultaneously evaporate and anneal using Effusion Cell. In this paper, we study on thin film growth of <111> crystal Au as bottom electrode which is essential for Self-Assembled molecular by Effusion Cell and analyze crystal structure, thickness, surface conductivity and so on as each process condition.

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Effect of underlayer electroless Ni-P plating on deposition behavior of cyanide-free electroless Au plating (비시안 무전해 Au 도금의 석출거동에 미치는 하지층 무전해 Ni-P 도금 조건의 영향)

  • Kim, DongHyun;Han, Jaeho
    • Journal of the Korean institute of surface engineering
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    • v.55 no.5
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    • pp.299-307
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    • 2022
  • Gold plating is used as a coating of connector in printed circuit boards, ceramic integrated circuit packages, semiconductor devices and so on, because the film has excellent electric conductivity, solderability and chemical properties such as durability to acid and other chemicals. In most cases, internal connection between device and package and external terminals for connecting packaging and printed circuit board are electroless Ni-P plating followed by immersion Au plating (ENIG) to ensure connection reliability. The deposition behavior and film properties of electroless Au plating are affected by P content, grain size and mixed impurity components in the electroless Ni-P alloy film used as the underlayer plating. In this study, the correlation between electroless nickel plating used as a underlayer layer and cyanide-free electroless Au plating using thiomalic acid as a complexing agent and aminoethanethiol as a reducing agent was investigated.

CO Gas Sensing Characteristics of Nanostructured ZnO Thin Films (산화아연 나노구조 박막의 일산화탄소 가스 감지 특성)

  • Hung, Nguyen Le;Kim, Hyo-Jin;Kim, Do-Jin
    • Korean Journal of Materials Research
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    • v.20 no.5
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    • pp.235-240
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    • 2010
  • We investigated the carbon monoxide (CO) gas-sensing properties of nanostructured Al-doped zinc oxide thin films deposited on self-assembled Au nanodots (ZnO/Au thin films). The Al-doped ZnO thin film was deposited onto the structure by rf sputtering, resulting in a gas-sensing element comprising a ZnO-based active layer with an embedded Pt/Ti electrode covered by the self-assembled Au nanodots. Prior to the growth of the active ZnO layer, the Au nanodots were formed via annealing a thin Au layer with a thickness of 2 nm at a moderate temperature of $500^{\circ}C$. It was found that the ZnO/Au nanostructured thin film gas sensors showed a high maximum sensitivity to CO gas at $250^{\circ}C$ and a low CO detection limit of 5 ppm in dry air. Furthermore, the ZnO/Au thin film CO gas sensors exhibited fast response and recovery behaviors. The observed excellent CO gas-sensing properties of the nanostructured ZnO/Au thin films can be ascribed to the Au nanodots, acting as both a nucleation layer for the formation of the ZnO nanostructure and a catalyst in the CO surface reaction. These results suggest that the ZnO thin films deposited on self-assembled Au nanodots are promising for practical high-performance CO gas sensors.

Numerical Investigation on Surface Plasmon Resonance Sensor Design with High Sensitivity Using Single and Bimetallic Film Structures (고감도 단금속 및 쌍금속 표면 플라즈몬 공명 센서 설계를 위한 수치해석 연구)

  • Gwon, Hyuk-Rok;Lee, Seong-Hyuk
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.58 no.4
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    • pp.795-800
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    • 2009
  • Surface plasmon resonance (SPR) has been widely used for biological and chemical sensing applications. The present study investigates numerically the optical characteristics for the single Au film and bimetallic Ag/Au film SPR configurations by using the multiple beam interference matrix (MBIM) method. We use the prism coupling method, especially Kretschmann configuration for excitation of surface plasmon wave (SPW). The estimated results of reflectance, phase shift and magnetic field intensity enhancement factor are provided for finding out the optimum configuration with high sensitivity for SPR measurement. As a result, the optimum thicknesses are found to be 52 nm for a single Au film and 5 nm to 36 nm for bimetallic Ag-Au film. From the comparison of full width half maximum (FWHM) values for reflectance, phase shift, and enhancement of magnetic field intensity, it is concluded that the highest sensitivity can be obtained when using the phase shift for SPR sensor.