Journal of the Korean Vacuum Society (한국진공학회지)

The Korean Vacuum Society (한국진공학회)
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The effect of annealing temperature and Ta layer on the electric conductivity of Au thin film deposited by the magnetron sputtering

마그네트론 스퍼터링법으로 증착한 Au 박막의 전기전도특성에 미치는 열처리 온도와 Ta 삽입층의 영향

  • Published : 2007.11.30
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Abstract

We fabricated thin films of Au and Ta/Au with thicknesses of 30 nm and 5 nm/30nm, respectively on Si(100) or Si(111) substrates using a dc magnetron sputtering system. Grain sizes, roughness and conductivity for Au thin films are measured as a function of the annealing temperatures. We observed that the grain size of samples enlarged and the surface became rougher with increasing annealing temperature. The grain size and roughness were improved in the structure of Si/Ta/Au than Si/Au. Furthermore, the Si(100) substrate was more effective for decreasing the resistance for Ta/Au system than Si(111) substrate. We confirm that by inserting a Ta buffer layer in Si(100)/Au, surface roughness was reduced and by adjusting the annealing temperature the grain size were enlarged. Consequently, the Au thin-film has improved conductivity.

열처리 온도에 따른 Au 결정립 크기의 변화와 표면 거칠기 및 전기전도도를 연구하기 위해 dc 마그네트론 스퍼터링법을 사용하여 Si(111) 또는 Si(100) 기판위에 Au (30nm) 와 Ta (5 nm)/Au (30 nm) 를 증착하였다. 열처리 온도가 증가함에 따라 시료의결정립 크기가 증가하였고, 박막 표면 거칠기 또한 증가함을 확인하였다. Si/Au보다Si/Ta/Au구조에서 결정립 크기가 증가하였고 표면거칠기는 감소되었으며 Si(111)기판보다 Si(100) 기판위의 Ta/Au구조에서 전기 저항이 감소되었다. Si(100)/Au구조에 5 nm 두께의 Ta의 buffer layer를 삽입하여 표면 거칠기 정도를 낮춤과 동시에 열처리 온도를 적절히 조절하여 결정립 크기를 증가시킴으로서 전도성이우수한 양질의 Au 박막을 얻을 수 있었다.

Keywords

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