• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.49.2-49.2
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• 2010

Copper oxide films have been deposited on silicon substrates by direct current magnetron sputtering of Cu in O2 / Ar gas mixtures. The target oxidation occurring as a result of either adsorption or ion-plating of reactive gases to the target has a direct effect on the discharge current and the resulting composition of the deposited films. The kinetic model which relates the target oxidation to the discharge current was proposed, showing the one-to-one relationship between discharge current characteristics and film stoichiometry of the deposited films.

• Journal of the Korean Institute of Gas
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• v.8 no.1 s.22
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• pp.37-47
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• 2004

Pressure swing adsorption (PSA) process using CMS as an oxygen purifier was developed to produce high purity oxygen over $99\%$ with high productivity. The cyclic performances such as purity, recovery, and productivity of PSA process were compared experimentally and theoretically under the non-isothermal condition. A binary ($O_2$/Ar 95:5 vol.$\%$) and two kinds of ternary ($O_2/Ar/N_2$ 95:4:1 and 90:4:6 vol.$\%$) mixtures were used as feed gases. The developed process with the consecutive two blowdown steps produced the oxygen with $99.8\%$ purity and $56\%$ recovery from $95\%$ oxygen containing feed. However, in the feed with $90\%$ oxygen, the $O_2$ Purity was decreased up to $97.3\%$. In addition, because the cyclic performances of the suggested process was significantly affected by the diffusion rate, the non-isothermal model with the the modified LDF model was applied for the process simulation. The concentration-dependent rate parameter of the applied rate model was incorporated with the Langmuir isotherm.

• Korean Journal of Materials Research
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• v.29 no.5
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• pp.336-341
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• 2019

The gas adsorption isotherm requires accurate measurement for the analysis of porous materials and is used as an index of surface area, pore distribution, and adsorption amount of gas. Basically, adsorption isotherms of porous materials are measured conventionally at 77K and 87K using liquid nitrogen and liquid argon. The cold volume calibration in this conventional method is done simply by splitting a sample cell into two zones (cold and warm volumes) by controlling the level sensor in a Dewar filled with liquid nitrogen or argon. As a result, BET measurement for textural properties is mainly limited to liquefied gases (i.e. $N_2$ or Ar) at atmospheric pressure. In order to independently investigate other gases (e.g. hydrogen isotopes) at cryogenic temperature, a novel temperature control system in the sample cell is required, and consequently cold volume calibration at various temperatures becomes more important. In this study, a cryocooler system is installed in a commercially available BET device to control the sample cell temperature, and the automated cold volume calibration method of temperature variation is introduced. This developed calibration method presents a reliable and reproducible method of cryogenic measurement for hydrogen isotope separation in porous materials, and also provides large flexibility for evaluating various other gases at various temperature.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.198-198
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• 2013

Metal-Oxide-Semiconductor (MOS)에서 사용되는 다양한 channel materials로 high electron mobility을 가지는 III-V compound semiconductor가 대두되고 있다 [1,2]. 하지만 이러한 III-V compound semiconductor는 Si에 비해 안정적인 native oxide가 부족하기 때문에 Si, Ge, Al2O3과 BeO 등과 같은 다양한 물질들의 interface passivation layers (IPLs)에 대한 연구가 많이 되고 있다. 이러한 IPLs 물질은 0.5~1.0 nm의 매우 얇은 physical thickness를 가지고 있고 또한 chemical inert하기 때문에 플라즈마 식각에 대한 연구가 되고 있지만 IPLs 식각 후 기판인 III-V compound semiconductor에 physical damage과 substrate recess를 줄이기 위해서 높은 선택비가 필요하다. 이러한 식각의 대안으로 원자층 식각이 연구되고 있으며 이러한 원자층 식각은 반응성 있는 BCl3의 adsorption과 low energy의 Ar bombardment로 desorption으로 self-limited한 one monolayer 식각을 가능하게 한다. 그러므로 본 연구에서는, III-V compound semiconductor 위에 IPLs의 adsorption과 desorption의 cyclic process를 이용한 원자층식각으로 다양한 물질인 SiO2, Al2O3 (self-limited one monolayer etch rate=about 1 ${\AA}$/cycle), BeO (self-limited one monolayer etch rate=about 0.75 ${\AA}$/cycle)를 얻었으며 그 결과 precise한 etch depth control로 minimal substrate recess 식각을 할 수 있었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.234.1-234.1
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• 2015

Molybdenum disulfide (MoS2)는 van der Waals 결합을 통한 층상구조의 물질로써 뛰어난 물리화학적, 기계적 특성으로 Field Effect Transistors (FETs), Photoluminescence, Photo Detectors, Light Emitters 등의 많은 분야에서 연구가 보고 되어지고 있는 차세대 2D-materials이다. 이처럼 MoS2 가 다양한 범위에 응용될 수 있는 이유는 layer 수가 증가함에 따라 1.8 eV의 direct band gap 에서 1.2 eV 의 indirect band-gap으로 특성이 변화할 뿐만 아니라 다양한 고유의 전기적 특성을 지니고 있기 때문이다. 그러나 MoS2 는 원자층 단위의 layer control 이 어렵다는 이유로 다양한 전자소자 응용에 많은 제약이 보고 되어졌다. 본 연구에서는 MoS2 의 layer를 control 하기 위해 ICP system 에서 mesh grid 를 삽입하여 Cl2 radical을 효과적으로 adsorption 시킨 뒤, Ion beam system 에서 Ar+ Ion beam 을 통해 한 층씩 제거하는 방식의 atomic layer etching (ALE) 공정을 진행하였다. ALE 공정시 ion bombardment 에 의한 damage 를 최소화하기 위해 Quadruple Mass Spectrometer (QMS) 를 통한 에너지 분석으로 beam energy 를 20 eV에서 최적화 할 수 있었고, Raman Spectroscopy, X-ray Photoelectron Spectroscopy (XPS), Atomic Force Microscopy(AFM) 분석을 통해 ALE 공정에 따른 MoS2 layer control 가능 여부를 증명할 수 있었다.

• Journal of Powder Materials
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• v.17 no.5
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• pp.379-384
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• 2010

In the present work, bismuth nanopowders with various particle size distributions were synthesized by controlling argon (Ar) gas flow rate and chamber pressure of a gas condensation (GC) apparatus. From the analyses of transmission electron microscopy (TEM) images and nitrogen gas adsorption results, it was found that as Ar gas flow rate increased, the specific surface area of bismuth increased and the average particles size decreased. On the other hand, as the chamber pressure increased, the specific surface area of bismuth decreased and the average particles size increased. The optimum gas flow rate and chamber pressure for the maximized electrochemical active surface area were determined to be 8 L/min and 50 torr, respectively. The bismuth nanopowders synthesized at the above condition exhibit 13.47 $m^2g^{-1}$ of specific surface area and 45.6 nm of average particles diameter.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.51-51
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• 2008

Carbon nanotubes (CNTs) have long been reported as an ideal material due to their excellent electrical conductivity and chemical and mechanical stability as well as their high aspect ratios for field emission devices. CNT emitters made by screen printing the organic binder-based CNT paste may act as a source to release gases inside a vacuum panel. These residual gases may cause a catastrophic damage by electrical arcing or ion bombardment to the vacuum microelectronic devices and may change their physical or electrical properties by adsorbing on the CNT emitter surface. In this study, we analyzed the composition of residual gases inside the vacuum-sealed panel by residual gas analyzer (RGA), investigating the effects of individual gases of different kinds at several pressures on the field emission characteristics of CNT emitters. The residual gases included $H_2$, CO, $CO_2$, $N_2$, $CH_4$, $H_2O$, $C_2H_6$, and Ar. Effect of residual gases on the field emission was studied by observing the variation of the pulse voltages with the duty ratio of3.3% to keep the constant emission current of $28{\mu}A$. Each gas species was introduced to a vacuum chamber up to three different pressures ($5\times10^{-7}$, $5\times10^{-6}$, and $5\times10^{-5}$ torr) each for 1 h while electron emission was continued. The three different pressure regions were separated by keeping a high vacuum of $\sim10^{-8}$ torr for a 1 h. The emission was terminated 6 h after the third gas exposure was completed. Field emission characteristics under residual gases will be discussed in terms of their adsorption and desorption on the surface of CNTs and the resultant change of work function.

• Journal of the Korean Vacuum Society
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• v.19 no.3
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• pp.169-176
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• 2010

Cryopumps can provide economical profits with a relatively high pumping speed per size. However, it is somewhat doubtful that pumping performance of cryopums, which is very sensitive to the temperature of the adsorption panel, can be maintained or recovered fast for large continuous or impulsive gas loads. The official evaluation items indicating cryopump performance for gas loads are the maximum throughput and the crossover value. There are two other, unofficial but widely used, items, the Ar recovery time and gulp characteristics. Although these evaluation items look absolutely different with each other, there are close relations and even duplications in their test schemes. Therefore, it is necessary to study how to improve practically each test procedure, and combine or unify some procedures.

• Applied Science and Convergence Technology
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• v.23 no.4
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• pp.169-178
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• 2014

Fluid model based numerical analysis is done to simulate a low damage etch back system for 20 nm scale semiconductor fabrication. Etch back should be done conformally with very high material selectivity. One possible mechanism is three steps: reactive radical generation, adsorption and thermal desorption. In this study, plasma generation and transport steps are analyzed by a commercial plasma modeling software package, CFD-ACE+. Ar + $CF_4$ ICP was used as a model and the effect of reactive gas inlet position was investigated in 2D and 3D. At 200~300 mTorr of gas pressure, separated gas inlet scheme is analyzed to work well and generated higher density of F and $F_2$ radicals in the lower chamber region while suppressing ions reach to the wafer by a double layer conducting barrier.

• Proceedings of the Membrane Society of Korea Conference
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• 1995.10a
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• pp.49-50
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• 1995

고분자분리막을 이용한 기체 혼합물의 분리방법은 심냉법(cryogenic process), 가압기체흡착법(Pressure adsorption)과 더불어 상업적으로 중요한 기체분리공정으로 부각되고 있다. 특히 고분자막 중 Polyimide 막은 열적, 화학적으로 안정하고 기체에 대한 선택성이 높으며 기계적 성질이 뛰어나 좋은 막소재로 알려져 있다. 그러나 투과도와 선택도사이에 일반적으로 Trade-off 현상이 있어서 투과도와 선택도를 동시에 향상 하려는 연구가 수행중에 있다. 본 연구에서는 높은 산소투과도를 갖는다고 보고된 6FDA-p-TeMPD막에 hexafluoropropene (HEP)으로 Plasma polymerization을 시키거나 CF$_4$, Ar기체가 플라즈마처리하여 투과특성을 개선시키고 이를 비교 고찰하였다.