Browse > Article
http://dx.doi.org/10.4150/KPMI.2010.17.5.379

Size Control of Bismuth Nanoparticles by Changes in Carrier-Gas Flow Rate and Chamber Pressure of Gas Condensation Apparatus  

Lee, Gyoung-Ja (Nuclear Materials Research Division, Korea Atomic Energy Research Institute (KAERI))
Kim, Chang-Kyu (Nuclear Materials Research Division, Korea Atomic Energy Research Institute (KAERI))
Lee, Min-Ku (Nuclear Materials Research Division, Korea Atomic Energy Research Institute (KAERI))
Rhee, Chang-Kyu (Nuclear Materials Research Division, Korea Atomic Energy Research Institute (KAERI))
Publication Information
Journal of Powder Materials / v.17, no.5, 2010 , pp. 379-384 More about this Journal
Abstract
In the present work, bismuth nanopowders with various particle size distributions were synthesized by controlling argon (Ar) gas flow rate and chamber pressure of a gas condensation (GC) apparatus. From the analyses of transmission electron microscopy (TEM) images and nitrogen gas adsorption results, it was found that as Ar gas flow rate increased, the specific surface area of bismuth increased and the average particles size decreased. On the other hand, as the chamber pressure increased, the specific surface area of bismuth decreased and the average particles size increased. The optimum gas flow rate and chamber pressure for the maximized electrochemical active surface area were determined to be 8 L/min and 50 torr, respectively. The bismuth nanopowders synthesized at the above condition exhibit 13.47 $m^2g^{-1}$ of specific surface area and 45.6 nm of average particles diameter.
Keywords
Bismuth nanopowder; Gas flow rate; Chamber pressure; Gas condensation method;
Citations & Related Records
연도 인용수 순위
  • Reference
1 J. Wang, J. Lu, S. B. Hocevar and P. A. M. Farias: Anal. Chem., 72 (2000) 3218.   DOI   ScienceOn
2 J. Wang, J. Lu, S. B. Hocevar and B. Ogorevc: Electroanal., 13 (2001) 13.   DOI   ScienceOn
3 J. Wang, J. Lu, Ü. A. Kirgöz, S. B. Hocevar and B. Ogorevc: Anal. Chim. Acta, 434 (2001) 29.   DOI   ScienceOn
4 S. B. Hocevar, B. Ogorevc, J. Wang and B. Pihlar: Electroanal., 14 (2002) 1707.   DOI   ScienceOn
5 G. Kefala, A. Economou, A. Voulgaropoulos and M. Sofoniou: Talanta, 61 (2003) 603.   DOI   ScienceOn
6 G. Kefala, A. Economou and A. Voulgaropoulos: Analyst, 129 (2004) 1082.   DOI   ScienceOn
7 R. Pauliukaitë and C. M. A. Brett: Electroanal., 17 (2005) 1354.   DOI   ScienceOn
8 J. Kruusma, C.E. Banks and R. G. Compton: Anal. Bioanal. Chem., 379 (2004) 700.
9 C. E Banks, J. Kruusma, R. R. Moore, P. Tomèík, J. Peters, J. Davis, Š. Komorsky-Lovrie and R. G. Compton: Talanta, 65 (2005) 423.   DOI   ScienceOn
10 J. Wang: Electroanal., 17 (2005) 1341.   DOI   ScienceOn
11 I. Svancara, L. Baldrianova, E. Tesarova, S. B. Hocevar, S. A. A. Elsuccary, A. Economou, S. Sotiropoulos, B. Ogorevc and K. Vytras: Electroanal., 18 (2006) 177.   DOI   ScienceOn
12 G.-J. Lee, H. M. Lee and C. K. Rhee: Electrochem. Commun., 9 (2007) 2514.   DOI   ScienceOn
13 G.-J. Lee, H. M. Lee, Y. R. Uhm, M. K. Lee and C. K. Rhee: Electrochem. Commun., 10 (2008) 1920.   DOI   ScienceOn
14 H. M. Lee, G.-J. Lee, H. J. Kim, Y. R. Uhm, H. J. Kim, M. K. Lee and C. K. Rhee: J. Nanosci. Nanotechnol., 10 (2010) 309.   DOI   ScienceOn
15 A. Y. Yermakov, M. A. Uimin, A. A. Mysik, A. Y. Korobeinikov, A. V. Korolyov, N. V. Mushnikov, T. Goto, V. S. Gaviko, N. N. Schegoleva: Mater. Sci. Forum, 386-388 (2002) 455.   DOI
16 Y. R. Uhm, W. W. Kim, C. K. Rhee: Phys. Stat. Sol. A, 201 (2004) 1934.   DOI   ScienceOn
17 B. S. Han, C. K. Rhee, M. K. Lee and Y. R. Uhm: IEEE Trans. Magnetics, 42 (2006) 3779.   DOI   ScienceOn
18 Y. R. Uhm, B. S. Han, M. K. Lee, S. J. Hong, C. K. Rhee: Mater. Sci. and Eng. A, 449-451 (2007) 813.   DOI   ScienceOn
19 G. H. Lee, J. H. Park, C. K. Rhee, W. W. Kim: J. Ind. Eng. Chem., 9 (2003) 71.