Abstract
Fluid model based numerical analysis is done to simulate a low damage etch back system for 20 nm scale semiconductor fabrication. Etch back should be done conformally with very high material selectivity. One possible mechanism is three steps: reactive radical generation, adsorption and thermal desorption. In this study, plasma generation and transport steps are analyzed by a commercial plasma modeling software package, CFD-ACE+. Ar + $CF_4$ ICP was used as a model and the effect of reactive gas inlet position was investigated in 2D and 3D. At 200~300 mTorr of gas pressure, separated gas inlet scheme is analyzed to work well and generated higher density of F and $F_2$ radicals in the lower chamber region while suppressing ions reach to the wafer by a double layer conducting barrier.
