• 제목/요약/키워드: Approximation to the m.l.e.

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MIXTURE OF CUMULANTS APPROXIMATION 법에 의한 발전시뮬레이션에 관한 연구 (A STUDY ON THE PROBABILISTIC PRODUCTION COST SIMULATION BY THE MIXTURE OF CUMULANTS APPROXIMATION)

  • 송길영;김용하;차준민
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1990년도 하계학술대회 논문집
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    • pp.154-157
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    • 1990
  • This paper describes a new method of calculating expected energy generation and loss of load probability (L.O.L.P) for electric power system operation and expansion planning. The method represents an equivalent load duration curve (E.L.D.C) as a mixture of cumulants approximation (M.O.C.A), which is the general case of mixture of normals approximation (M.O.N.A). By regarding a load distribution as many normal distributions-rather than one normal distribution-and representing each of them in terms of Gram-Charller expansion, we could improve the accuracy of results. We developed an algorithm which automatically determines the number of distribution and demarcation points. In modelling of a supply system, we made subsets of generators according to the number of generator outage: since the calculation of each subset's moment needs to be processed rapidly, we futher developed specific recursive formulae. The method is applied to the test systems and the results are compared with those of cumulant, M.O.N.A and Booth-Baleriaux method. It is verified that the M.O.C.A method is faster and more accurate than any other methods.

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Mixture of Cumulants Approximaton 법에 의한 발전 시물레이션에 관한 연구 (A Study on the Probabilistic Production Cost Simulation by the Mixture of Cumulants Approximation)

  • 송길영;김용하
    • 대한전기학회논문지
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    • 제40권1호
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    • pp.1-9
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    • 1991
  • This paper describes a new method of calculating expected energy generation and loss of load probability (L.O.L.P) for electric power system operation and expansion planning. The method represents an equivalent load duration curve (E.L.D.C) as a mixture of cumulants approximation (M.O.N.A). By regarding a load distribution as many normal distributions-rather than one normal distribution-and representing each of them in terms of Gram-Charlier expansion, we could improve the accuracy of results. We developed an algorithm which automatically determines the number of distribution and demarcation points. In modeling of a supply system, we made subsets of generators according to the number of generator outage: since the calculation of each subset's moment needs to be processed rapidly, we further developed specific recursive formulae. The method is applied to the test systems and the results are compared with those of cumulant, M.O.N.A. and Booth-Baleriaux method. It is verified that the M.O.C.A. method is faster and more accure than any other method.

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A Note on Estimation Under Discrete Time Observations in the Simple Stochastic Epidemic Model

  • Oh, Chang-Hyuck
    • Journal of the Korean Statistical Society
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    • 제22권1호
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    • pp.133-138
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    • 1993
  • We consider two estimators of the infection rate in the simple stochastic epidemic model. It is shown that the maximum likelihood estimator of teh infection rate under the discrete time observation does not have the moment of any positive order. Some properties of the Choi-Severo estimator, an approximation to the maximum likelihood estimator, are also investigated.

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e ̄-CF$_4$산란의 전자이동속도 및 특성에너지 연구 (Electron Swarm Drift Velocity and Characteristic Energy in e$^{[-10]}$ -CF$_4$Scattering)

  • 임상원;유회영;김상남;하성철
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 추계학술대회 논문집
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    • pp.169-174
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    • 1996
  • In this paper, the electron transport characteristic in CF$_4$has been analysed over the E/N range 1~300(Td) by a two-term approximation Boltzmann equation method and by a Monte Carlo simulation. The alteration of cross sections from the literature is avoided as much as possible in the analysis. The motion has been calculated to give swarm parameters for the electron drift velocity(W), diffusion coefficient(D$_{L}$), the ratio of the diffusion coefficient to the mobility(D$_{L}$/$\mu$), mean energy($\varepsilon$), the electron energy distribution function. The electron energy distribution function has been analysed in CF$_4$at E/N=50, 100 and 200(Td) for a case of the equilibrium region in the mean electron energy. The results of Boltzmann equation and Monte Carlo simulation have been compared with experimental data by Y. Nakamura and M. Hayashi.shi.

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FIBREWISE INFINITE SYMMETRIC PRODUCTS AND M-CATEGORY

  • Hans, Scheerer;Manfred, Stelzer
    • 대한수학회보
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    • 제36권4호
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    • pp.671-682
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    • 1999
  • Using a base-point free version of the infinite symmetric product we define a fibrewise infinite symmetric product for any fibration $E\;\longrightarrow\;B$. The construction works for any commutative ring R with unit and is denoted by $R_f(E)\;l\ongrightarrow\;B$. For any pointed space B let $G_I(B)\;\longrightarrow\;B$ be the i-th Ganea fibration. Defining $M_R-cat(B):= inf{i\midR_f(G_i(B))\longrihghtarrow\;B$ admits a section} we obtain an approximation to the Lusternik-Schnirelmann category of B which satisfies .g.a product formula. In particular, if B is a 1-connected rational space of finite rational type, then $M_Q$-cat(B) coincides with the well-known (purely algebraically defined) M-category of B which in fact is equal to cat (B) by a result of K.Hess. All the constructions more generally apply to the Ganea category of maps.

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Modeling of low-dimensional pristine and vacancy incorporated graphene nanoribbons using tight binding model and their electronic structures

  • Wong, K.L.;Chuan, M.W.;Chong, W.K.;Alias, N.E.;Hamzah, A.;Lim, C.S.;Tan, M.L.P.
    • Advances in nano research
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    • 제7권3호
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    • pp.209-221
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    • 2019
  • Graphene, with impressive electronic properties, have high potential in the microelectronic field. However, graphene itself is a zero bandgap material which is not suitable for digital logic gates and its application. Thus, much focus is on graphene nanoribbons (GNRs) that are narrow strips of graphene. During GNRs fabrication process, the occurrence of defects that ultimately change electronic properties of graphene is difficult to avoid. The modelling of GNRs with defects is crucial to study the non-idealities effects. In this work, nearest-neighbor tight-binding (TB) model for GNRs is presented with three main simplifying assumptions. They are utilization of basis function, Hamiltonian operator discretization and plane wave approximation. Two major edges of GNRs, armchair-edged GNRs (AGNRs) and zigzag-edged GNRs (ZGNRs) are explored. With single vacancy (SV) defects, the components within the Hamiltonian operator are transformed due to the disappearance of tight-binding energies around the missing carbon atoms in GNRs. The size of the lattices namely width and length are varied and studied. Non-equilibrium Green's function (NEGF) formalism is employed to obtain the electronics structure namely band structure and density of states (DOS) and all simulation is implemented in MATLAB. The band structure and DOS plot are then compared between pristine and defected GNRs under varying length and width of GNRs. It is revealed that there are clear distinctions between band structure, numerical DOS and Green's function DOS of pristine and defective GNRs.

Simulations of fiber spinning and film blowing based on a molecular/continuum model for flow-induced crystallization

  • McHugh, Anthony J.;Doufas, A.K.
    • Korea-Australia Rheology Journal
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    • 제13권1호
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    • pp.1-12
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    • 2001
  • This paper describes the application of our recently developed two-phase model for flow-induced crystallization (FIC) to the simulation of fiber spinning and film blowing. 1-D and 2-D simulations of fiber spinning include the combined effects of (FIC), viscoelasticity, filament cooling, air drag, inertia, surface tension and gravity and the process dynamics are modeled from the spinneret to the take-up roll device (below the freeze point). 1-D model fits and predictions are in very good quantitative agreement with high- and low-speed spinline data for both nylon and PET systems. Necking and the associated extensional softening are also predicted. Consistent with experimental observations, the 2-D model also predicts a skin-core structure at low and intermediate spin speeds, with the stress, chain extension and crystallinity being highest at the surface. Film blowing is simulated using a "quasi-cylindrical" approximation for the momentum equations, and simulations include the combined effects of flow-induced crystallization, viscoelasticity, and bubble cooling. The effects of inflation pressure, melt extrusion temperature and take-up ratio on the bubble shape are predicted to be in agreement with experimental observations, and the location of the frost line is predicted naturally as a consequence of flow-induced crystallization. An important feature of our FIC model is the ability to predict stresses at the freeze point in fiber spinning and the frost line in film blowing, both of which are related to the physical and mechanical properties of the final product.l product.

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블록 암호에 대한 효율적인 선형 공격 방법 (Multiple Linear Cryptanalysis-Revisited)

  • 최준;홍득조;홍석희;이상진;임종인
    • 정보보호학회논문지
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    • 제12권6호
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    • pp.59-69
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    • 2002
  • 1993년도에 선형 공격이 Matsui에 의해 제안된 이후에 이를 개량한 여러 선형 공격들이 등장하였다. 그 중에 한가지는 B. Kaliski와 M. Robshaw에 의한 방법인데, 이 방법은 여러 개의 독립적인 선형 근사식을 동시에 이용하여 블록 암호를 공격하는 새로운 방법이였다. 이 방법은 선형 공격 보다 더 적은 기지 평문수를 요구한다는 장점은 있었지만 실제로 그들의 방법을 블록 암호에 적용하는 데에는 문제점이 있었다. 본 고에서는 그러한 문제점을 해결하면서 동시에 여러 개의 독립적인 선형 근사식을 이용할 수 있는 방법을 제시한다. 본 고에서 제시된 방법을 이용했을때 선형 공격에 비해 8,16 라운드 DES에 대해 5배,1.25배 더 적은 기지 평문을 가지고 각각 95%, 86% 확률로 공격에 성공할 수 있었으며, 또한 선택 평문을 이용한 L. R. Knudsen과 J. E. Mathiassen의 방법을 본 고에서 제시한 방법에 접목하면, 약 $2^{40.6}$개 이하의 기지 평문들을 이용하여 86% 성공 확률로 키 15 비트를 찾을 수 있다. 이 결과는 현재까지 DES에 대한 공격 중 가장 우수한 결과이다.

Electronic properties of monolayer silicon carbide nanoribbons using tight-binding approach

  • Chuan, M.W.;Wong, Y.B.;Hamzah, A.;Alias, N.E.;Sultan, S. Mohamed;Lim, C.S.;Tan, M.L.P.
    • Advances in nano research
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    • 제12권2호
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    • pp.213-221
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    • 2022
  • Silicon carbide (SiC) is a binary carbon-silicon compound. In its two-dimensional form, monolayer SiC is composed of a monolayer carbon and silicon atoms constructed as a honeycomb lattice. SiC has recently been receiving increasing attention from researchers owing to its intriguing electronic properties. In this present work, SiC nanoribbons (SiCNRs) are modelled and simulated to obtain accurate electronic properties, which can further guide fabrication processes, through bandgap engineering. The primary objective of this work is to obtain the electronic properties of monolayer SiCNRs by applying numerical computation methods using nearest-neighbour tight-binding models. Hamiltonian operator discretization and approximation of plane wave are assumed for the models and simulation by applying the basis function. The computed electronic properties include the band structures and density of states of monolayer SiCNRs of varying width. Furthermore, the properties are compared with those of graphene nanoribbons. The bandgap of ASiCNR as a function of width are also benchmarked with published DFT-GW and DFT-GGA data. Our nearest neighbour tight-binding (NNTB) model predicted data closer to the calculations based on the standard DFT-GGA and underestimated the bandgap values projected from DFT-GW, which takes in account the exchange-correlation energy of many-body effects.