• 제목/요약/키워드: Anti-stiction

검색결과 18건 처리시간 0.027초

다결정실리콘 표면 미세가공 기술을 위한 점착 방지법들의 성능 비교 (The Comparison of Stiction Results of Anti-Stiction Methods for Polysilicon Surface Micromachining)

  • 이윤재;한승오;박정호
    • 센서학회지
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    • 제9권3호
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    • pp.233-241
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    • 2000
  • 본 연구에서는 동일한 테스트 구조물을 사용하여 현재 다결정실리콘 표면 미세가공 기술에서 널리 사용되고 있는 여러 가지 점착 방지법들의 성능을 비교하였다. 테스트 구조물로는 다양한 폭과 길이를 갖는 일반적인 cantilever와 dimple, antistiction tip, plate를 가지는 cantilever를 사용하였으며 구조물 형태에 따른 점착 방지 결과를 관찰하였다. 희생층 제거 후 구조물과 기판의 점착을 결정하는 건조과정에서는 증발법과 승화건조법을 사용하였다. 증발법에서는 methanol, IPA, DI water 등을 여러 최종 세척액으로 사용하여 표면장력과 세척 온도에 따른 점착 방지 결과를 비교하였다. 승화건조법에서는 중간 세척액으로 methanol을 사용하였다. 그리고 동일한 실험조건으로 stress gradient가 있는 동일한 구조물을 사용하여 stress gradient에 의한 점착 방지 결과를 관찰하였다. 결론적으로 승화건조법이 여러 가지 증발법보다 우수한 결과를 보여주었고 다결정 실리콘 표면 미세가공 기술로 미세 구조물을 부양시킬 때 승화건조법이 가장 우수한 방법이라고 사료된다.

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광통신용 글라스렌즈 성형 금형의 이형성 코팅에 관한 연구 (A Study on the Anti-Stiction Coating of Glass Lens Mold for Optical Communication)

  • 정운조;조재철
    • 전기학회논문지
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    • 제66권6호
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    • pp.962-967
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    • 2017
  • The Diamond-Like-Carbon (DLC) coating is a new carbon-based amorphous material. Carbon ions in the plasma are electrically accelerated and collide with the substrate to form a thin film. This film has similar properties to diamonds such as high surface hardness, low coefficient of friction, corrosion resistance and durability that do not react with acids and bases. Also, since there is no thermal deformation, it can be printed at room temperature. and coated on almost all materials such as paper, polymer, ceramics and various metals even aspheric lens it is possible to mirror surface coating with excellent surface roughness. In this paper, we have analyzed the DLC film formed by Filtered Arc Ion Plating (Filtered AIP) process.

핫 엠보싱용 점착방지막으로 사용되는 10nm급 두께의 Teflon-like 박막의 형성 및 특성평가 (The Deposition and Characterization of 10 nm Thick Teflon-like Anti-stiction Films for the Hot Embossing)

  • 차남구;김인권;박창화;임현우;박진구
    • 한국재료학회지
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    • 제15권3호
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    • pp.149-154
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    • 2005
  • Teflon like fluorocarbon thin films have been deposited on silicon and oxide molds as an antistiction layer for the hot embossing process by an inductively coupled plasma (ICP) chemical vapor deposition (CVD) method. The process was performed at $C_4F_8$ gas flow rate of 2 sccm and 30 W of plasma power as a function of substrate temperature. The thickness of film was measured by a spectroscopic ellipsometry. These films were left in a vacuum oven of 100, 200 and $300^{\circ}C$ for a week. The change of film thickness, contact angle and adhesion and friction force was measured before and after the thermal test. No degradation of film was observed when films were treated at $100^{\circ}C$. The heat treatment of films at 200 and $300^{\circ}C$ caused the reduction of contact angles and film thickness in both silicon and oxide samples. Higher adhesion and friction forces of films were also measured on films treated at higher temperatures than $100^{\circ}C$. No differences on film properties were found when films were deposited on either silicon or oxide. A 100 nm silicon template with 1 to $500\;{\mu}m$ patterns was used for the hot embossing process on $4.5\;{\mu}m$ thick PMMA spun coated silicon wafers. The antistiction layer of 10 nm was deposited on the silicon mold. No stiction or damages were found on PMMA surfaces even after 30 times of hot embossing at $200^{\circ}C$ and 10 kN.

나노임프린팅 공정을 위한 점착방지막 형설 (Preparation of Antistiction Coatings for Nanoimprinting)

  • 차남구;박창화;김규채;박진구
    • 한국소성가공학회:학술대회논문집
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    • 한국소성가공학회 2006년도 춘계학술대회 논문집
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    • pp.86-90
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    • 2006
  • Nanoimprint lithography (NIL) is a novel method to fabricate nanometer scale patterns. It is a simple process with low cost, high throughput and high resolution. NIL process creates patterns by the mechanical deformation of imprint resist and physical contact process. This physical contact process causes the stiction between the resist and the stamp. Stiction becomes a key issue especially in the stamps including narrow pattern size and wide area during NIL process development. The antistiction layer coating using fluorocarbon is very effective to prevent this problem and ensure successful NIL. In this paper, the concept of antistiction coating is explained and different preparation methods for nanoimprinting are briefly discussed.

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DDMS를 이용한 MEMS 구조물의 새로운 점착방지 방법 (A new Method of Stiction Reduction for MEMS Structures Using DDMS)

  • 김봉환;오창훈;전국진;오용수
    • 대한전자공학회논문지SD
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    • 제37권6호
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    • pp.9-16
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    • 2000
  • 본 논문은 다결정실리콘의 점착방지를 위한 새로운 화학적 방법에 의한 코팅방법을 제시하였고 그 특성을 확인하였다. 이 코팅방법은 최근에 사용되어지고 있는 Octadecyltrichlorosilane (OTS) 나 1H,1H2H,2H-perfluorodecyltrichlorosilane (FDTS) 같은 Monoalkyltrichlorosilanes (MTS, $RSiCl_3$) 계열의 물질 대신에 Dialkyldichlorosilanes (DDS, $R2SiCl_2$) 계열의 물질을 이용하여 다결정실리콘의 표면을 바꾸는 방법이다. 이 DDS 계열의 화학물질 중에서 Dichlorodimethylsilane (DDMS, $(CH_3)2SiCl_2$)는 쉽게 구할 수 있고 다결정실리콘의 표면을 친수성에서 소수성으로 간단하고 빠른 방법으로 바꿀 수 있는 장점이 있다. 본 논문에서는 DDMS 코팅된 다결정실리콘으로 만들어진 외팔보를 3 mm길이까지 제작하여 점착현상이 전혀 일어나지 않았음을 확인하였고 이를 실제 구조물에 적용하였다.

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A Disparate Low Loss DC to 90 GHz Wideband Series Switch

  • Gogna, Rahul;Jha, Mayuri;Gaba, Gurjot Singh;Singh, Paramdeep
    • Transactions on Electrical and Electronic Materials
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    • 제17권2호
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    • pp.92-97
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    • 2016
  • This paper presents design and simulation of wide band RF microswitch that uses electrostatic actuation for its operation. RF MEMS devices exhibit superior high frequency performance in comparison to conventional devices. Similar techniques that are used in Very Large Scale Integration (VLSI) can be employed to design and fabricate MEMS devices and traditional batch-processing methods can be used for its manufacturing. The proposed switch presents a novel design approach to handle reliability concerns in MEMS switches like dielectric charging effect, micro welding and stiction. The shape has been optimized at actuation voltage of 14-16 V. The switch has an improved restoring force of 20.8 μN. The design of the proposed switch is very elemental and primarily composed of electrostatic actuator, a bridge membrane and coplanar waveguide which are suspended over the substrate. The simple design of the switch makes it easy for fabrication. Typical insertion and isolation of the switch at 1 GHz is -0.03 dB and -71 dB and at 85 GHz it is -0.24 dB and -29.8 dB respectively. The isolation remains more than - 20 db even after 120 GHz. To our knowledge this is the first demonstration of a metal contact switch that shows such a high and sustained isolation and performance at W-band frequencies with an excellent figure-of merit (fc=1/2.pi.Ron.Cu =1,900 GHz). This figure of merit is significantly greater than electronic switching devices. The switch would find extensive application in wideband operations and areas where reliability is a major concern.

기상 자기조립박막 법을 이용한 나노임프린트용 점착방지막 형성 및 특성평가 (Deposition and Characterization of Antistiction Layer for Nanoimprint Lithography by VSAM (Vapor Self Assembly Monolayer))

  • 차남구;김규채;박진구;정준호;이응숙;윤능구
    • 한국재료학회지
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    • 제17권1호
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    • pp.31-36
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    • 2007
  • Nanoimprint lithography (NIL) is a new lithographic method that offers a sub-10nm feature size, high throughput, and low cost. One of the most serious problems of NIL is the stiction between mold and resist. The antistiction layer coating is very effective to prevent this stiction and ensure the successful NIL results. In this paper, an antistiction layer was deposited by VSAM (vapor self assembly monolayer) method on silicon samples with FOTS (perfluoroctyltrichlorosilane) as a precursor for making an antistiction layer. A specially designed LPCVD (low pressure chemical vapor deposition) was used for this experiment. All experiments were achieved after removing the humidity. First, the evaporation test of FOTS was performed for checking the evaporation temperature at low pressure. FOTS was evaporated at 5 Tow and $110^{\circ}C$. In order to evaluate the temperature effect on antistiction layer, chamber temperature was changed from 50 to $170^{\circ}C$ with 0.1ml of FOTS for 1 minute. Good hydrophobicity of all samples was shown at about $110^{\circ}$ of contact angle and under $20^{\circ}$ of hysteresis. The surface energies of all samples calculated by Lewis acid/base theory was shown to be about 15mN/m. The deposited thicknesses of all samples measured by ellipsometry were almost 1nm that was similar value of the calculated molecular length. The surface roughness of all samples was not changed after deposition but the friction force showed relatively high values and deviations deposited at under $110^{\circ}$. Also the white circles were founded in LFM images under $110^{\circ}$. High friction forces were guessed based on this irregular deposition. The optimized VSAM process for FOTS was achieved at $170^{\circ}C$, 5 Torr for 1 hour. The hot embossing process with 4 inch Si mold was successfully achieved after VSAM deposition.