• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.7
• /
• pp.521-524
• /
• 2012

We report on variations of electrical properties with different active layer thickness and post-annealing temperature in amorphous In-Ga-Zn-O (IGZO) thin-film transistors (TFTs). In particular, subthreshold swing (SS) of the IGZO-TFTs was improved as increasing the active layer thickness at an given post-annealing temperature, accompanying the negative shift in turn-off voltage. However, as increasing post-annealing temperature, only turn-off voltage was shifted negatively with almost constant SS value. The effect of the active layer thickness and post-annealing temperature on electrical properties, such as SS, field effect mobility and turn-off voltage in IGZO-TFTs has been explained in terms of the variation of trap density in IGZO channel layer and at gate dielectric/IGZO interface.

• Journal of the Semiconductor & Display Technology
• /
• v.15 no.2
• /
• pp.11-15
• /
• 2016

This paper, Ga-doped ZnO (GZO) thin films which were deposited on Corning glass substrate using an magnetron sputtering deposition technology and then the post deposition annealing process was conducted for 30 minutes at different temperature of 100, 200, 300, and $400^{\circ}C$, respectively. So as to investigate the properties for the relevant the Concentration and Oxygen Vacancy with Annealing temperature of Ga-doped ZnO thin films by RF Sputtering method. The Carrier concentration is enhanced as annealing temperature decreases, and also the oxygen vacancy concentration is enhanced as annealing temperature decreased. Oxygen vacancy will decrease along with Carrier concentration. This change in Carrier concentration is related to changes in oxygen vacancy concentration. The figure of merit obtained in this study means that Ga-doped ZnO films which annealed at $400^{\circ}C$ have the lowest Carrier concentration and Oxygen vacancy, which have the highest optoelectrical performance that it could be used as a transparent electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.16 no.10
• /
• pp.859-864
• /
• 2003

We prepared SOI(silicon-on-insulator) wafer pairs of Si II SiO$_2$/Si$_3$N$_4$ II Si using wafer direct bonding with an electric furnace annealing(EFA), a fast linear annealing(FLA), and a rapid thermal annealing(RTA), respectively, by varying the annealing temperatures at a given annealing process. We measured the bonding area and the bonding strength with processes. EFA and FLA showed almost identical bonding area and theoretical bonding strength at the elevated temperature. RTA was not bonded at all due to warpage, We report that FLA process was superior to other annealing processes in aspects of surface temperature, annealing time, and bonding strength.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.17 no.1
• /
• pp.11-17
• /
• 2007

The spherical NiZn ferrite particles were prepared by ultrasonic spray pyrolysis with mixed solution of aqueous metal nitrates. The NiZn ferrite particle was observed with nano-sized primary particles of about 10 nm or less before annealing which represented as paramagnetic behavior measured at 77 K and room temperature. The typical abnormal growth of primary particles like polyhedral primary particles was observed by annealing at 1273 K with Zn-concentration dependency. The XRD patterns showed good crystallinity of NiZn ferrite powder after annealing. In annealing process, the intra-particle sintering phenomenon was observed and the spherical particle morphology was collapsed at 1673 K. The saturation magnetization of NiZn ferrite powder for each annealing temperature was decreased with measuring temperature of $77{\sim}$300K.

• Transactions of the Korean Society of Mechanical Engineers
• /
• v.3 no.2
• /
• pp.43-47
• /
• 1979

This paper presents the effect of stress relief annealing on mechanical properties in single Vee-groove welding joint. In this experiment, the investigation of annealing effect on mechanical properties of test material carried out by changing the annealing temperature from $600^{\circ}C$ to $900^{\circ}C$ under the given conditions. The results pbtained by this study are as follows: (1) Under the constant welding conditions, the tensile strength of test welded joint decrease in accordance with the increase of annealing temperature. The experimental results show that the reduction rate of tensile strength is about 35.09% of base metal strength. (2) Microhafdness distribution of welded joint bring about the maximum hardness near the bended line of welding joint. (3) Izod impact energy of welded joint in increase in according to the rise of annealing temperature and the peak energy of impact test occurs at $800^{\circ}C$

• Journal of the Korean Society for Heat Treatment
• /
• v.24 no.4
• /
• pp.199-202
• /
• 2011

Ga doped ZnO thin films were deposited with RF magnetron sputtering on glass substrate without intentional substrate heating and then the effect of post deposition annealing temperature on the structural, optical and electrical properties of the films was investigated. The post deposition annealing process was conducted for 30 minutes in a vacuum of $1{\times}10^{-3}$ Torr and the vacuum annealing temperatures were 150 and $300^{\circ}C$, respectively. As increase annealing temperature, GZO films show the increment of the prefer orientation of ZnO (002) diffraction peak in the XRD pattern and the optical transmittance in a visible wave region was also increased, while the electrical sheet resistance was decreased. The figure of merit obtained in this study means that GZO films which vacuum annealed at $300^{\circ}C$ have the highest optoelectrical performance in this study.

• Journal of information and communication convergence engineering
• /
• v.2 no.3
• /
• pp.149-152
• /
• 2004

In this paper, we present the film bulk acoustic resonator (FBAR) devices fabricated by considering the effects of annealing temperature on zinc oxide (ZnO) film growth characteristics. In order to determine the annealing temperature and annealing time at which the ZnO film can have good material properties, the several resonators containing ZnO layers were fabricated and annealed at various temperatures from $27^{\circ}C\;to\;300^{\circ}C$ in Ar gas ambient. The effects of the annealing temperature and annealing time on the ZnO film properties were comprehensively studied in order to further improve the resonance characteristics of FBAR resonators.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2004.05a
• /
• pp.16-19
• /
• 2004

In this paper, we present the film bulk acoustic resonator (FBAR) devices fabricated by considering the effects of annealing temperature on zinc oxide (ZnO) film growth characteristics. In order to determine the annealing temperature and annealing time at which the ZnO film can have good material properties, the several resonators containing ZnO layers were fabricated and annealed at various temperatures from 27$^{\circ}C$ to 30$0^{\circ}C$ in Ar gas ambient. The effects of the annealing temperature and annealing time on the ZnO film properties were comprehensively studied in order to further improve the resonance characteristics of FBAR resonators.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.5
• /
• pp.242-242
• /
• 2004

The composites were fabricated 61 vol.%α-α-SiC and 39vol.% WC powders with the liquid forming additives of 12wt% Al₂O₃＋Y₂O₃ by pressureless annealing at 1700, 1800, 1900℃ for 4 hours. The result of phase analysis of composites by XRD revealed α-SiC(2H), WC, and YAG($Al_5Y_3O_{12}$) crystal phase. The relative density, the flexural strength, fracture toughness and Young′s modulus showed respectively the highest value of 99.4%, 375.76㎫, 5.79㎫ㆍ$m^{\frac{1}{2}}$, and 106.43㎬ for composite by pressureless annealing temperature 1900℃ at room temperature. The electrical resistivity showed the lowest value of 1.47×$10^{-3}$/Ω·㎝ for composite by pressureless annealing temperature 1900℃ at 25℃. The electrical resistivity of the α-SiC-WC composites was all positive temperature cofficient resistance (PTCR) in the temperature ranges from 25℃ to 500℃.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.53 no.5
• /
• pp.241-247
• /
• 2004

The composites were fabricated 61 vol.%$\alpha$-$\alpha$-SiC and 39vol.% WC powders with the liquid forming additives of 12wt% $Al_2$O$_3$＋Y$_2$O$_3$ by pressureless annealing at 1700, 1800, 190$0^{\circ}C$ for 4 hours. The result of phase analysis of composites by XRD revealed $\alpha$-SiC(2H), WC, and YAG(Al$_{5}$ Y$_3$O$_{12}$ ) crystal phase. The relative density, the flexural strength, fracture toughness and Young's modulus showed respectively the highest value of 99.4%, 375.76㎫, 5.79㎫ㆍm$\frac{1}{2}$, and 106.43㎬ for composite by pressureless annealing temperature 190$0^{\circ}C$ at room temperature. The electrical resistivity showed the lowest value of 1.47${\times}$10$^{-3}$ $\Omega$$.$cm for composite by pressureless annealing temperature 190$0^{\circ}C$ at $25^{\circ}C$. The electrical resistivity of the $\alpha$-SiC-WC composites was all positive temperature cofficient resistance (PTCR) in the temperature ranges from $25^{\circ}C$ to 50$0^{\circ}C$.