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A Study on Properties of Ga-doped ZnO Thin Films for Annealing Temperature Change by RF Sputtering Method  

Han, Seung Ik (Department of Semiconductor Engineering, Cheong ju University)
Kim, Hong Bae (Department of Semiconductor Engineering, Cheong ju University)
Publication Information
Journal of the Semiconductor & Display Technology / v.15, no.2, 2016 , pp. 11-15 More about this Journal
Abstract
This paper, Ga-doped ZnO (GZO) thin films which were deposited on Corning glass substrate using an magnetron sputtering deposition technology and then the post deposition annealing process was conducted for 30 minutes at different temperature of 100, 200, 300, and $400^{\circ}C$, respectively. So as to investigate the properties for the relevant the Concentration and Oxygen Vacancy with Annealing temperature of Ga-doped ZnO thin films by RF Sputtering method. The Carrier concentration is enhanced as annealing temperature decreases, and also the oxygen vacancy concentration is enhanced as annealing temperature decreased. Oxygen vacancy will decrease along with Carrier concentration. This change in Carrier concentration is related to changes in oxygen vacancy concentration. The figure of merit obtained in this study means that Ga-doped ZnO films which annealed at $400^{\circ}C$ have the lowest Carrier concentration and Oxygen vacancy, which have the highest optoelectrical performance that it could be used as a transparent electrode.
Keywords
Ga-doped ZnO; Carrier Concentration; Oxygen Vacancy; Annealing;
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1 D. H. Kim, M. R. Park, G. H. Lee, Surf. Coat. Technol.. 201 (2006) 927   DOI
2 S. H. Cho, J. H. Park, S. C. Lee, W. S. Cho, J. H. Lee, H. H. Yon, P. K. Song, J. Phys. Chem. Of Solids, 69 (2008) 516.
3 Y. R. Park, D. G. Jung, Y. S. Kim, Jap. J. Appl. Phys.. 47 (2008) 516.   DOI
4 D. R. Sahu, J.-L. Huang, Microelectron. J.. 38 (2007) 299   DOI
5 Z. C. Jin., I. Harmberg and C. G. Granqvist, "Optical Prop-erties of Sputter-deposited ZnO:Al Thin Films", J. Appl. Phys., 64 5117-31, 1988.   DOI
6 W. M. Duncan, J. W. Lee, R. J. Matyi and H. Y. Liu, "Pho-toluminescence and X-ray Properties of Heteroepitaxial Gal-", J. Appl. Phys. 59, 2161, 1986.   DOI
7 Y. S. Park, S. H. Lee, P. K. Song, J. Kor. Inst. Surf. Eng.. 40 (2007) 107.   DOI
8 Simon L. King., J. G. E. Gardeniers., "Pulsed-laser deposited ZnO for device apllications.", Applied surface science, Vol. 96-98, pp. 811-818, 1996   DOI
9 Y. L. Liu., Y. C. Liu., "Structural and optical properties of nanocrystalline ZnO films grown by cathodic electrodeposition on Si substrates", Applied physics B, Vol. 322, no.1, pp. 31-36(6), 2000
10 J. W. Kim, C. S. Hwang, H. B. Kim, "The Transparent Semiconductor Characteristics of ZnO Thin Films Fabricated by the RF Magnetron Sputtering Method", Applied Journal of the Semiconductor & Display Technology, Vol. 9, No.1, pp. 29-33(5), 2010
11 S. J. Henley, M. N. R. Ashfold, D. Cherns, Surf. Coat. Technol.. 177-178 (2004) 271.   DOI
12 Y. H. Jung, E. S. Lee, K. H. Kim, J. Kor. Inst. Surf. Eng.. 38 (2005) 150.
13 C. S. Hong, H. H. Park, J. Moon, H. H. Park, Thin Solid Films, 515(3) (2006).
14 C. G. Granqvist, "Transparent conductors as solar energy materials: A panoramic review", Solar Energy Materials & Solar Cells, 91, 1529-1598, 2007.   DOI
15 Z. C. Jin, I. Harmberg, C. G. Granqvist, Thin Solid Films, 64 (1988) 381.
16 I. H. Jung, Y. j. Kim, R. D. Lee, "Properties of Ge,Ga and Ga-doped ZnO thin films prepared by RF magnetron sputtering", Applied Journal of the Semiconductor & Display Technology, Vol. 9, No.3, pp. 41-45(5), 2010
17 H. D. Ko, W. P. Tal, K. C. Kim, S. H. Kim, S. J. Suha, and Y. S. Kima, J. Cryst. Growth, 277 (2005) 352.   DOI
18 H. J. Ko, Y. F. Chen, S. K. Hong, H. Wenisch, T. Yao, and D. C. Look, Appl. Phys. Lett 77, 37-61, 2000.   DOI