• 산업진흥연구
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• 제1권1호
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• pp.1-6
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• 2016

산화물반도체의 결정질특성과 비정질특성을 이해하기 이하여 AZO 박막과 IGZO 박막을 증착하고 열처리하여 물리적 화학적인 특성을 비교하였다. AZO 박막은 열처리온도가 올라갈수록 결정성이 높아졌으나 IGZO 박막은 열처리온도가 높을수록 비정질특성이 우수하였다. AZO 박막은 열처리에 따라서 PL, XPS 분석에서 화학적 이동이 나타났으나 IGZO 박막은 화학적 이동이 나타나지 않았다. AZO의 O 1s 결합 에너지는 531.5 eV였으며, IGZO 박막은 530 eV으로 낮았다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1277_1278
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• 2009

Amorphous oxide semiconductor $InGaZnO_4$(IGZO) is a very promising candidate of channel layer in transparent thin film trasisitor(TTFT) because of its high mobility and high transparency in visible light region. Amorphous IGZO films were deposited at room temperature on a fused silica substrate using pulsed laser deposition method. In-situ post annealing was carried out at 150-450C right after film deposition. The $O_2$ partial pressures during the deposition and the post annealing was fixed to 10mTorr. The electron transport properties of the amorphous IGZO films were improved by thermal annealing. The temperature range in which the improvement of the electrical properties, was 150C~300C.

• 한국전기전자재료학회논문지
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• 제25권9호
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• pp.677-680
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• 2012

The dependency of annealing temperature on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different annealing treatment. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing annealing temperature. As a result, oxygen vacancies generated in SZTO channel layer with increasing annealing temperature resulted in negative shift in $V_{th}$ and increase in on-current.

• 전자공학회논문지A
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• 제32A권1호
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• pp.179-184
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• 1995

Phosphorous was deped in silicon thin films by Ion Mass Doping and Changes in the electrical resistance with respect tko heat treatments were investigated. SOI(Silicon On Insulator) thin films which contain few grain boundaries prepared by ZMR(Zone Melting Recrystallization) of polysilicon films, polysilicon films which have about 1500 $A^{\rarw}$ of grain size prepared by LPCVD at 625.deg. C, and amorphous silicon thin films prepared by LPCVD at low temperature were used as substrates and thermal behavior of phosphorous after RTA(Rapid Thermal Annealing) and furnace annealing was carefully studied. Amorphous thin films showed about 10$^{6}$ .OMEGA./ㅁbefore any heat treatment, while polycrystalline and SOI films about 10$^{3}$.OMEGA./¤. All these films, however, showed about 10.OMEGA./ㅁafter furnace annealing at 700.deg. C for 3hrs and RTA showed about the same trend. Films with grain boundaries showed a certain range of heat treatment which rendered increase of the electrical resistance upon annealing, which could not be observed in amorphous films and segregation of doped phosphorous by diffusion with annealing was thought to be responsible for this abnormal behavior.

• 대한금속재료학회지
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• 제46권2호
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• pp.53-57
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• 2008

This study examined the role of excess free volume on the corrosion resistance of an amorphous alloy. Corrosion behaviors were monitored on the amorphous alloys, of which amount of free volume was controlled via the isothermal annealing below the glass transition temperature, using immersion tests and potentiodynamic polarization tests in HCl aqueous solutions. It was found that the corrosion resistance of the amorphous alloy is improved by reducing the amount of excess free volume. The possible reason explaining the experimental result was discussed from the viewpoint of the internal energy associated with the annihilation of excess free volume.

• 한국재료학회지
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• 제12권4호
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• pp.279-282
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• 2002

The effect of field annealing on the velocity changes of magneto surface acoustic wave (MSAW) devices has been investigated for deposited $(Fe_{1-x}Co_x)_{89}Zr_{11}$ (x = 0~1.0) amorphous films. By means of two step field annealing at $195^{\circ}C$ for 10 minute in the magnetic field of 130 Oe, the MSAW device with x=0.4 film among the devices showed the superior velocity change of 0.1 %. This gigantic value was obtained in the DC bias field of 40 Oe at the exciting frequency of 8.7 MHz. It was confirmed that such behavior was due to the variation of differential permeability caused by an optimal stress within the magnetic film.

• 대한전자공학회논문지
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• 제25권8호
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• pp.950-958
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• 1988

We have implemented a RTA system using W-halogen lamps and tried to recrystallize the phosphorus ion implanted amorphous silicon on insultor (SOI) taking advantages of seeding window. The purpose of this study is to investigate the possibility of a typical crystalline orientation occurred during the solidifying process of molten amorphous silicon layer. Experimental results show that several twin boundaries are found on the seeding window region after annealing for 15 sec at 1040\ulcorner. These twin boundaries represent that the recrystallization is partialy possible and when the annealing is done at 1150\ulcorner, (100) etch pits with <110> facets are found on the solidified amorphous silicon layer. Consequently, Hall mobility of recrystallized silicon film is measured and the thermal behavior of grain boundary is also observed by SEM.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1989년도 춘계학술대회 논문집
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• pp.49-51
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• 1989

The effect of Mo elenent and annealing condition on the magnetic properties were investigated in Fe$_{80}$B$_{12}$Si$_{8}$ amorphous alloy. With increasing Mo contents, soft magnetic properties were improved by decreasing coercive force and increasing maximum permeability. These improvements were attributed to the decreasing of magnetostriction by Mo addition. The annealing treatment also improved the soft magnetic properties of (Fe$_{1-x}$ Mo$_{x}$)$_{80}$ B$_{12}$ Si$_{8}$ amorphous alloys. It could be thought that these improvements were ascribed to the relaxation of internal stress.nal stress.ess.

• 한국재료학회지
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• 제12권11호
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• pp.883-888
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• 2002

We investigated the void formation in composite-titanium silicide($TiSi_2$) process. We varied the process conditions of polycrystalline/amorphous silicon substrate, composite $TiSi_2$ deposition temperature, and silicidation annealing temperature. We report that the main reason for void formation is the mass transport flux discrepancy of amorphous silicon substrate and titanium in composite layer. Sheet resistance in composite $TiSi_2$ without patterns is mainly affected by silicidation rapid thermal annealing (RTA) temperature. In addition, sheet resistance does not depend on the void defect density. Sheet resistance with sub-0.5 $\mu\textrm{m}$ patterns increase abnormally above $850^{\circ}C$ due to agglomeration. Our results imply that $sub-750^{\circ}C$ annealing is appropriate for sub 0.5 $\mu\textrm{m}$ composite X$sub-750_2$ process.

• 한국세라믹학회지
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• 제28권11호
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• pp.892-896
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• 1991

The cyrstallization behavior of lead titanate powders prepared by sol-gel and coprecipitation techniques was investigated. The lead titanate precursors were derived from a mixed solution of lead nitrate and titanium tetrachloride at 4$0^{\circ}C$ to 43$^{\circ}C$ and pH of 9.00 to 9.75. The X-ray diffraction patterns of the dried gel and coprecipitated powders showed it to be amorphous. DTA runs of the powders indicated crystallization to occur at 475~48$0^{\circ}C$. However, the amorphous powders were partially crystallized at 400~45$0^{\circ}C$ with sufficient annealing time. The room temperature Raman spectra from heat-treated powders changed continuously from amorphous to crystalline state with increasing heat-treating temperature. By annealing coprecipitated powders, a dramatic change in the Raman spectra due to the structural relaxation as the annealing temperatures increased, was clearly visible. i.e., coprecipitated, gel, and crystalline structure, in turn.