1 |
R.T. Tung, Applied Surface Science, 117/118, 268 (1997)
DOI
ScienceOn
|
2 |
H. Zhang, J. Poole, R. Eller and M.Keefe, J. Vac. Sci. Technol. A, 17(4), 1904 (1999)
DOI
|
3 |
Y. Akasaka, K. Miyano, K. Nakajima, M. Takahasi, S. Tanaka, and K. Suguro, Jpn. J. Appl. Phys., 38(4B), 2385 (1999)
DOI
|
4 |
M. Sekiguchi, M. Yamanaka, T. Fuji, M. Fukumato, and S. Mayumi, J. Electrochem. Soc., 144(1), (1997)
|
5 |
J. Lutze, G. Scott, and M. Manley, IEEE Electron Device Letters., 21(4), 155 (2000)
DOI
ScienceOn
|
6 |
H. Fang, M.C. Oztu, E.G. Seebauer, D.E. Batchelor, Journal of the Electrochemical Society, 146(11), 4240 (1999)
DOI
|
7 |
J.P. Gambino, E.G. Colgan, A.G. Domenicucci, and B. Cunningham, J. Electrochem. Soc., 145(4), (1998)
|
8 |
C.Y. Kang, D.G. Kang, and J.W. Lee, Journal of Applied Physics, 86, 5293 (1999)
DOI
|
9 |
H.S. Kim, D.H. Ko, D.L. Base, Kazuyuki Fujihara, and H.K. Kang, IEEE Electron Device Letters, 20(2), 86 (1999)
DOI
ScienceOn
|
10 |
I. Raaijmakers and K.B. Kim, J. Appl. Phys., 67(10), 6255 (1990)
DOI
|
11 |
D.G. Ong, Modern MOS Technology:Process, Devices, and Design, McGraw-Hill, New York (1984)
|
12 |
K. Holloway and R. Sinclair, J. Appl. Phys., 61(4), 1359 (1987)
DOI
|
13 |
T.P. Nolan, R. Sinclair, and R. Beyers, J. Appl. Phys., 7, 720 (1992)
DOI
|
14 |
J.S. Byun, D.H. Kim, and W.S.Kim, H.J.Kim, J. Appl. Phys., 78(3), 1725 (1995)
DOI
ScienceOn
|
15 |
J. Lasky, J.S. Nakos, O.J. Cain, and P.J. Geiss, IEEE Trans. Electron Device, 38, 262 (1991)
DOI
ScienceOn
|
16 |
S. Nygren, M. Ostling, S.D. Peterson, H. Norstrom, K.H. Ryden, R. Bushta, and C. Chatfield, Thin Solid Films, 168, 325 (1989)
DOI
ScienceOn
|