Browse > Article
http://dx.doi.org/10.4313/JKEM.2012.25.9.677

Electrical Performance of Amorphous SiZnSnO TFTs Depending on Annealing Temperature  

Lee, Sang-Yeol (Department of Semiconductor Engineering, Cheongju University)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.9, 2012 , pp. 677-680 More about this Journal
Abstract
The dependency of annealing temperature on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different annealing treatment. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing annealing temperature. As a result, oxygen vacancies generated in SZTO channel layer with increasing annealing temperature resulted in negative shift in $V_{th}$ and increase in on-current.
Keywords
a-SZTO; Oxide semiconductor; Annealing temperature; Threshold voltage;
Citations & Related Records
연도 인용수 순위
  • Reference
1 J. K. Jeong, H. W. Yang, J. H. Jeong, Y .G. Mo, and H. D. Kim, Appl. Phys. Lett., 93, 123508 (2008).   DOI   ScienceOn
2 E. C. Chong, K. C. Jo, and S. Y. Lee, Appl. Phys. Lett., 96, 152102 (2010).   DOI   ScienceOn
3 E. M. C. Fortunato, L. M. N. Pereira1, P. M. C. Barquinha, A. M. B. do Rego, G. Gonçalves, A. Vilà, J. R. Morante, and R. F. P. Martins, Appl. Phys. Lett., 92, 222103 (2008).   DOI   ScienceOn
4 W. F. Wu and B. S. Chiou, Thin Solid Films, 247, 201 (1994).   DOI   ScienceOn
5 E. Ziegler, A. Heirich, H. Oppermann, and G. Stover, Phys. Stat. Sol., A66, 635 (1981).
6 J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, and C. J. Kim, Appl. Phys. Lett., 93, 033513 (2008).   DOI
7 S. Y. Lee, Y. W. Song, and S. P. Chang, Bulletin of KIEEME, 21, 3 (2008).
8 K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature, 432, 488 (2004).   DOI   ScienceOn
9 J. Y. Kwon, J. S. Jung, K. S. Son, K. H Lee, J. S. Park, T. S. Kim, J. S. Park, R. Choi, J. K. Jeong, B. W. Koo, and S. Y. Lee, J. Electrochem. Soc., 158, H433 (2011).   DOI
10 J. S. Park, T. S. Kim, K. S. Son, K. H. Lee, W. J. Maeng, H. S. Kim, E. S. Kim, K. B. Park, J. B. Seon, W. Choi, M. K. Ryu, and S. Y. Lee, Appl. Phys. Lett., 96, 262109 (2010).   DOI
11 J. K. Jeong, Information Display, 10, 42, (2009).