• Journal of the Korean institute of surface engineering
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• v.34 no.5
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• pp.503-509
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• 2001

Thin films of hydrogenated amorphous silicon (a-Si : H) and hydrogenated amorphous silicon carbide (a-SiC:H) of different compositions were deposited on Si(100) wafer and glass by RF plasma-enhanced chemical vapor deposition (RF-PECVD). In the present work, we have investigated the effects of the RF power on the properties, such as optical band gap, transmittance and crystallinity. The Raman data show that the a-Si:H material consists of an amorphous and crystalline phase for the co-presence of two peaks centered at 480 and $520 cm^{-1}$ . The UV-VIS data suggested that the optical energy band gap ($E_{g}$ ) is not changed effectively with RF power and the obtained $E_{g}$(1.80eV) of the $\mu$c-Si:H thin film has almost the same value of a-Si:H thin film (1.75eV), indicating that the crystallity of hydrogenated amorphous silicon thin film can mainly not affected to their optical properties. However, the experimental results have shown that$ E_{g}$ of the a-SiC:H thin films changed little on the annealing temperature while $E_{g}$ increased with the RF power. The Raman spectrum of the a-SiC:H thin films annealed at high temperatures showed that graphitization of carbon clusters and microcrystalline silicon occurs.

• Journal of the Korean institute of surface engineering
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• v.42 no.4
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• pp.173-178
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• 2009

DLC film was synthesized on plastic injection mold(SKD11, $30\;mm\;{\times}\;19\;mm\;{\times}\;0.5\;mm$) and Si(100) wafer for 2 h at $130^{\circ}C$ under 6 mTorr using hybrid method of rf sputtering and ion source. The obtained film was analysed by Raman spectroscopy, AFM, TEM, Nano indenter and scratch tester, etc. The film was defined as an amorphous phase. In the Raman spectrum, broad peak of $sp^2$-bonded carbon attributed to graphite at $1550\;cm^{-1}$ were observed, and the ratio of ID($sp^3$ diamond intensity)/IG($sp^2$ graphite intensity) was approximately 0.54. The adhesion of DLC film was more than 80 N with scratch tester when $0.2\;{\mu}m$ thickness Cr was coated as interlayer. The micro-hardness was distributed at 35~37 GPa. The friction coefficient was 0.02~0.07, and surface roughness(Ra) was 0.34~1.64 nm. The lifetime of DLC coated plastic injection mold using as a connector part in computer was more than 2 times of non-coated mold.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1220-1223
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• 2003

A new type electric double layer capacitor (EDLC) was constructed by using carbon nanofibers (CNFs) and DAAQ(1,5-diaminoanthraquinone) electrode. Carbonaceous materials are found in variety forms such as graphite, diamond, carbon fibers etc. While all the carbon nanofibers include impurities such as amorphous carbon, nanoparticles, catalytic metals and incompletely grown carbons. We have eliminated of Ni particles and some carbonaceous particles in nitric acid. Nitric acid treated CNFs could be covered with very thin DAAQ oligomer from the results of CV and TG analyses and SEM images. A crystalline supramolecular oligomer of 1,5-diaminoanthraquinone(DAAQ) was successfully prepared as a thin film by electrochemical oxidation from an acidic non-aqueous medium. DAAQ oligomer film exhibited a specific capacity as 45-50 Ah/kg in 4M $H_2SO_4$. Its electrochemical characteristics were investigated by cyclic voltammetry. And compared with different electrolyte of aqueous type. During ultrasonic irradiation CNFs was to disperse in 0.1M $H_2SO_4$. As a result, CNFs coated by DAAQ composite electrode showed relatively good electrochemical behaviors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.1
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• pp.40-43
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• 2018

Various Ni-doped carbon (C : Ni) thin films were fabricated using different Ni target power densities by unbalanced magnetron sputtering (UBM). The effects of target power density on the structural, physical, surface, and electrical properties of C : Ni films were investigated. The UBM C : Ni thin films exhibited uniformly smooth surfaces. The rms surface roughness and friction coefficient values of the C : Ni films decreased with the increase in target power density. The physical properties of the films such as hardness and elastic moduli increased while their electrical properties such as resistivity decreased with the increase in the target power density. These results show that an increase of the power density leads to an increase in the proportion of Ni and nanocrystallization of the amorphous carbon film; this contributes to the changes observed in the physical and electrical characteristics.

• Journal of the Optical Society of Korea
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• v.13 no.1
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• pp.65-74
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• 2009

Device quality indium tin oxide (ITO) films are deposited on glass substrates and ultra-thin diamond-like carbon films are deposited as a buffer layer on ITO by a pulsed Nd:YAG laser at 355 nm and 532 nm wavelength. ITO films deposited at room temperature are largely amorphous although their optical transmittances in the visible range are > 90%. The resistivity of their amorphous ITO films is too high to enable an efficient organic light-emitting device (OLED), in contrast to that deposited by a KrF laser. Substrate heating at $200^{\circ}C$ with laser wavelength of 355 nm, the ITO film resistivity decreases by almost an order of magnitude to $2{\times}10^{-4}\;{\Omega}\;cm$ while its optical transmittance is maintained at > 90%. The thermally induced crystallization of ITO has a preferred <111> directional orientation texture which largely accounts for the lowering of film resistivity. The background gas and deposition distance, that between the ITO target and the glass substrate, influence the thin-film microstructures. The optical and electrical properties are compared to published results using other nanosecond lasers and other fluence, as well as the use of ultra fast lasers. Molecularly doped, single-layer OLEDs of ITO/(PVK+TPD+$Alq_3$)/Al which are fabricated using pulsed-laser deposited ITO samples are compared to those fabricated using the commercial ITO. Effects such as surface texture and roughness of ITO and the insertion of DLC as a buffer layer into ITO/DLC/(PVK+TPD+$Alq_3$)/Al devices are investigated. The effects of DLC-on-ITO on OLED improvement such as better turn-on voltage and brightness are explained by a possible reduction of energy barrier to the hole injection from ITO into the light-emitting layer.

• Tribology and Lubricants
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• v.35 no.6
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• pp.362-368
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• 2019

In this study, mechanical and tribological properties were investigated by varying the process temperature (50, 100, 125 and 150℃) to reduce internal stress. The internal stress reduction by thermal dissociation ta-C coating film with increasing temperature is confirmed through the curvature radius of the ta-C coating according to the temperature of the SUS plate. As the coating temperature increased, the mechanical properties (hardness, modulus, toughness) deteriorated, which is in agreement with the Raman analysis results. As the temperature increased, the sp² phase ratio increased owing to the dissociation of the sp³ phase. The friction and wear properties are related to the process temperature during ta-C coating. Low friction and wear properties are observed in high hardness samples manufactured at 50℃, and wear resistance properties decreased with increasing temperature. The contact area is expected to increase owing to the decrease of hardness(72 GPa to 39 GPa) and fracture toughness with increasing temperature which accelerated wear because of the debris generated. It was confirmed that at process temperature of over than 100℃, the bond structure of the carbon film changed, and the effect of excellent internal stress was reduced. However, the wear resistance simultaneously decreased owing to the reduction in fracture toughness. Therefore, in order to increase industrial utilization, optimum temperature conditions that reduce internal stress and retain mechanical properties.

• Journal of the Korean Society for Heat Treatment
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• v.32 no.4
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• pp.155-160
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• 2019

Diamond Like Carbon (DLC) is a metastable form of amorphous carbon that have superior material properties such as high mechanical hardness, chemical inertness, abrasion resistance, and biocompatibility. Furthermore, its material properties can be tuned by additional doping such as nitrogen or boron. However, either pure DLC or doped DLC show poor adhesion property that makes it difficult to apply contact processing technique. Therefore we propose ultrafast laser micromachining which is non-contact precision process without mechanical degradation. In this study, we developed precision machining process of DLC thin film using an ultrafast laser by investigating the process window in terms of laser fluence and laser wavelength. We have also demonstrated various patterns on the film without generating any microcracks and debris.

• Journal of the Korean Ceramic Society
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• v.47 no.3
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• pp.262-267
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• 2010

a-SiC has been thought as an ideal candidate for conventional silicon at many applications. However, the uniformity problem of deposition has been a obstacle for conventional use of a-SiC:H films. a-SiC:H films were deposited on (100) silicon wafer by RPECVD system in various temperature. HMDS and $H_2$ gas were used as a precursor and a carrier gas, respectively. The flow rate of HMDS source and $C_2H_2$ dilution gas was fixed in order to study the carbon effect on the film stoichiometric and bonding properties. The plasma power varied from 200 to 400W. We used three types of source delivery line to control the uniformity and film properties of deposited film. We showed that the change of source delivery line has effect on the film uniformity of deposited film and this change of line did not affect on film properties. Also, the change of deposition conditions has effect on the film uniformity.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.75-75
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• 2003

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2015.05a
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• pp.69-70
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• 2015

탄소는 독성이 없고 친환경적이며 물리화학적 안정성 및 내마모성 등 많은 장점을 가지고 있어 많은 연구들이 진행 되고 있다. 바이오영역에서도 많은 연구들이 진행되어 왔지만 실제 응용된 것은 많지 않다. 본 연구에서는 탄소 박막표면에 -CHx 화학구조가 세포 성장에 어떤 영향을 미치는지 규명 하고자 하였다.