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http://dx.doi.org/10.4191/KCERS.2010.47.3.262

The Properties and Uniformity Change of Amorphous SiC:H Film Deposited using Remote PECVD System with Various Deposition Conditions  

Cho, Sung-Hyuk (Department of Advanced Material Science and Engineering, Yonsei University)
Choi, Yoo-Youl (Department of Advanced Material Science and Engineering, Yonsei University)
Choi, Doo-Jin (Department of Advanced Material Science and Engineering, Yonsei University)
Publication Information
Journal of the Korean Ceramic Society / v.47, no.3, 2010 , pp. 262-267 More about this Journal
Abstract
a-SiC has been thought as an ideal candidate for conventional silicon at many applications. However, the uniformity problem of deposition has been a obstacle for conventional use of a-SiC:H films. a-SiC:H films were deposited on (100) silicon wafer by RPECVD system in various temperature. HMDS and $H_2$ gas were used as a precursor and a carrier gas, respectively. The flow rate of HMDS source and $C_2H_2$ dilution gas was fixed in order to study the carbon effect on the film stoichiometric and bonding properties. The plasma power varied from 200 to 400W. We used three types of source delivery line to control the uniformity and film properties of deposited film. We showed that the change of source delivery line has effect on the film uniformity of deposited film and this change of line did not affect on film properties. Also, the change of deposition conditions has effect on the film uniformity.
Keywords
SiC; PECVD; HMDS; Plasma; Uniformity;
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