• The Journal of the Korea institute of electronic communication sciences
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• v.10 no.11
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• pp.1251-1256
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• 2015

In this paper, the processing conditions of the amorphous silicon film growth were investigated the effect in forming the HSG-Si on the surface of the storage electrode. As a result, when the amorphous silicon film phosphorus concentration is greater than $5.5{\pm}0.1E19atoms/cm^3$, HSG-Si is not formed correctly and showed the concentration dependency of HSG formation. Also, the optimum condition of the phosphorus concentration for amorphous silicon and HSG thickness are $4.5E19atoms/cm^3$ and $450{\AA}$, respectively, because of the HSG thickness over the $500{\AA}$ create to bit failure according to a short of the electrodes and the electrode.

• Journal of Magnetics
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• v.9 no.1
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• pp.23-26
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• 2004

A magneto-current (MC) was investigated for magnetic tunnel transistor (MTT) with amorphous n-type Si film. A relative MC (more than 49.6%) was observed at an emitter-base bias voltage ($V_{EB}$) of 0.65 V at room temperature. Above a $V_{EB}$ of 0.70 V, however, a rapid decrease in MC was observed in the amorphous Si-based MTT. The collector current increasing and transfer ratio as emitter-base voltage were mainly due to the rapid creation electrons of conduction band states in the Si collector. This approach would make integration in various components and systems easier than a MTT grown on a semiconductor wafer.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.2
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• pp.71-75
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• 2014

To observe the optical characteristic of oxide semiconductor depending on the degree of bonding structures, SiOC, ZnO and IGZO were prepared by the RF magnetron sputter system and chemical vapor deposition. Generally, crystal ZnO, amorphous SiOC and IGZO changed the optical characteristics in according to the electro-chemical behavior due to the oxygen vacancy at an interface between different groups. Transmittance of SiOC and IGZO with amorphous structures was higher than that of ZnO with crystal structure, because of lowering the carrier concentration due to the recombination of electron and holes carriers as oxygen vacancies. Besides, the energy gap of amorphous SiOC and IGZO was higher than the energy gap of crystal ZnO. The diffusion mobility of holes is higher than the drift mobility of electrons.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.5 no.6
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• pp.1128-1135
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• 2001

In this paper, a new HSG-Si formation technology, "seeding method', which employs Si$_2$H$_{6}$-molecule irradiation and annealing, was applied for realizing 64Mbit DRAMs. By using this technique, grain size controlled HSG-Si can be fabricated on in-situ phosphorous-doped amorphous-Si electrode. The new HSG-Si fabrication technology achieves twice the storage capacitance with high reliability for the stacked capacitors. In this technique, optimum process conditions of the phosphorous concentration, storage polysilicon deposition temperature and thickness of hemispherical grain silicon are in the range of 3.0-4.0E19atoms/㎤, 53$0^{\circ}C$ and 400$\AA$, respectively. In the 64M bit DRAM capacitor using optimum process conditions, limit thickness of dielectric nitride is about 65$\AA$.

• Journal of the Korean Ceramic Society
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• v.31 no.1
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• pp.74-78
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• 1994

Degradation of thin oxide by doped poly-Si and its improvement were studied. The gate oxide can be degraded by phosphorous in poly-Si doped POCl3. The degradation is increased with the decrement of sheet resistance and poly-Si thickness. Oxide failures of amorphous-Si are higher than those of poly-Si. In-situ double deposition of amorphous-Si, 54$0^{\circ}C$/30 nm, and poly-Si, 6$25^{\circ}C$/220 nm, forms the mismatch structure of grain boundary between amorphous-Si and poly-Si, and suppresses the excess phosphorous on oxide surface by the mismatch structure. The control of phosphorous through grain boundary improves the oxide reliability.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.3
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• pp.276-283
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• 2005

Magnetic tunneling transistor (MTT) device using the amorphous n-type Si semiconductor film for base and collector consisting of the [CoFe/NiFe](free layer) and Si(top layer) multilayers was used to study the spin-dependent hot electron magnetocurrent (MC) and tunneling magnetoresistance (TMR) at room temperature. A large MC of 40.2 % was observed at the emitter-base bias voltage ( $V_{EB}$ ) of 0.62 V. The increasing emitter hot current and transfer ratio ( $I_{C}$/ $I_{E}$) as $V_{EB}$ are mainly due to a rapid increase of the number of conduction band states in the Si collector. However, above the $V_{EB}$ of 0.62 V, the rapid decrease of MC was observed in amorphous Si-based MTT because of hot electron spin-dependent elastic scattering across CoFe/Si interfaces.

• Journal of the Korean institute of surface engineering
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• v.35 no.4
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• pp.211-217
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• 2002

Ti-Si-N films were deposited onto WC-Co substrate by a RF-PECVD technique. The deposition behaviors of Ti-Si-N films were investigated by varying the deposition temperature, RF power, and reaction gas ratio (Mx). Ti-Si-N films deposited at 500, 180W, and Mx 60% had a maximum hardness value of 38GPa. The microstructure of films with a maximum hardness was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase by HRTEM analyses. The microstructure of maximum hardness with Si content (10 at.%) was revealed to be a nanocomposite of TiN crystallites penetrated by amorphous silicon nitride phase, but to have partly aligned structure of TiN and some inhomogeniety in distribution. and At above 10 at.% Si content, TiN crystallite became finer and more isotropic also thickness of amorphous silicon nitride phase increased at microstructure.

• Journal of Magnetics
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• v.16 no.3
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• pp.318-321
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• 2011

A new Fe-based amorphous compound powder was prepared from Fe-Si-B amorphous powder by crushing amorphous ribbons as the first magnetic component and Fe-Cr-Mo metallic glassy powder by water atomization as the second magnetic component. Subsequently by adding organic and inorganic binders to the compound powder and cold pressing, the new Fe-based amorphous compound powder cores were fabricated. This new Fe-based amorphous compound powder cores combine the superior DC-Bias properties and the excellent core loss. The core loss of 500 kW/$m^3$ at $B_m$ = 0.1T and f = 100 kHz was obtained When the mass ratio of FeSiB/FeCrMo equals 3:2, and meanwhile the DC-bias properties of the new Fe-based amorphous compound powder cores just decreased by 10% compared with that of the FeSiB powder cores. In addition, with the increasing of the content of the FeCrMo metallic glassy powder, the core loss tends to decrease.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.12 no.1
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• pp.18-26
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• 1999

In this study, the undoped amorphous layers and phosphorus doped amorphous layers are fabricated using LPCVD at 531$^{\circ}C$ with SiH$_4$ gas or at same temperature with PH$_3$ gas during deposition, respectively. The thickness of deposited amorphous layer from this experiments was 5000 ${\AA}$. In this experiments, undoped amorphous layers are deposited with SiH$_4$and Si$_2$H$\_$6/ gas in a low pressure reactor using LPCVD. These amorphous layers can be doped for poly-silicon by phosphorus ion implantation. The experiments of this study are carried out by phosphorus ion implantation with energy 40 keV into P doped and undoped amorphous silicon layers. The distribution of phosphorus profiles are measured by SIMS(Cameca 6f). Recoiling effects and two dimensional profiles are also explained by comparisions of experimental and simulated data. Finally range moments of SIMS profiles are calculated and compared with simulation results.

• Journal of Welding and Joining
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• v.17 no.4
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• pp.53-59
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• 1999

Amorphous alloys have also been called glassy alloys or non-crystalline alloys. They are made by the rapid solidification. The solidification occurs so rapid that the atoms are frozen in their liquid configuration. There are unique magnetic, mechanical, electrical and corrosive behaviors which result form their amorphous structure. In the study. amorphous coatings were manufactured with Ni-Cr-B-Si powders by flame spray. Measurement of hardness, were resistance, corrosion resistance and observation of microstructures and XRD, DSC were performed to investigate characteristics of amorphous coatings. The experimental results obtained as follow: 1) Amorphous powders could not be manufactured with the spraying in the spraying in the liquid nitrogen. But, amorphous coatings could be manufactured with the rotation cooling method by liquid nitrogen. In the fabrication of amorphous coatings, major factor was the rapid cooling by rotation of the substrate. 2) Hardness of coatings was obtained Hv 960 by formation of amorphous phase. But, wear resistance decreased. That was due to porosity in the coatings by the rapid cooling. 3) In the case of corrosion resistance, amorphous coatings were superior to air-cooled coatings. That was due to formation of amorphous phase. 4) After amorphous coatings were heat-treated at 520℃ for 1hr. hardness increased 80% and wear resistance increased 30% comparing with air cooled coatings. These were due to crystallization of amorphous phase and decrease of porosity by heat-treatment.