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http://dx.doi.org/10.4313/JKEM.2014.27.2.71

Optical Properties of Semiconductors Depending on the Contact Characteristic Between Different Groups  

Oh, Teresa (Department of Semiconductor Engineering, Cheongju University)
Nho, Jong Ku (Green Optics)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.27, no.2, 2014 , pp. 71-75 More about this Journal
Abstract
To observe the optical characteristic of oxide semiconductor depending on the degree of bonding structures, SiOC, ZnO and IGZO were prepared by the RF magnetron sputter system and chemical vapor deposition. Generally, crystal ZnO, amorphous SiOC and IGZO changed the optical characteristics in according to the electro-chemical behavior due to the oxygen vacancy at an interface between different groups. Transmittance of SiOC and IGZO with amorphous structures was higher than that of ZnO with crystal structure, because of lowering the carrier concentration due to the recombination of electron and holes carriers as oxygen vacancies. Besides, the energy gap of amorphous SiOC and IGZO was higher than the energy gap of crystal ZnO. The diffusion mobility of holes is higher than the drift mobility of electrons.
Keywords
ZnO; IGZO; SiOC; Amorphous; PL; Transmittance;
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1 J. C. K. Lam, M. Y. M. Huang, T. H. Ng, M.K.B. Dawood, F. Zhang, A. Du, H. Sun, Z. Shen, and Z. Mai, Appl. Phys. Lett., 102, 022908 (2013).   DOI   ScienceOn
2 H. Hosono, Journal of Non-Crystalline Solids, 35, 2851 (2006).
3 S. W. Tsao, T. C. Chang, S. Y. Huang, M. C. Chen, S. C. Chen, C. T. Tsai, Y. J. Kuo, Y. C. Chen, and W. C. Wub, Solid-State Electronics 54, 1497 (2010).   DOI   ScienceOn
4 K. Nomura, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, Appl. Phys. Lett., 93, 192107 (2008).   DOI   ScienceOn
5 D. Kot, T. Mchedlidze, G. Kissinger, and W. Von Ammonc, ECS Journal of Solid State Science and Technology, 2, P9 (2013)
6 J. S. Park, W. J. Maeng, H. S. Kim, and J. S. Park, Thin Solid Films, 520, 1679 (2012).   DOI   ScienceOn
7 W. T. Chen, S. Y. Lo, S. C. Kao, H. W. Zan, C. C. Tsai, J. H. Lin, C. H. Fang, and C. C. Lee, IEEE Electron. Dev. Lett., 32, 1552 (2011).   DOI   ScienceOn
8 C. C. Lo and T. E. Hsieh, Ceramics International, 38, 3977 (2012).   DOI   ScienceOn
9 M. E. Lopes, H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, and I. Ferreira, Appl. Phys. Lett., 95, 063502 (2009).   DOI   ScienceOn
10 J. Maserjian and N. Zamani, Appl. Phys. Lett., 53, 559 (1982).
11 J. G. Simmons, Phys. Rev., 155, 657 (1967).   DOI
12 O. Mitrofanov and M. Mantra, J. Appl. Phys., 95, 6414 (2004).   DOI   ScienceOn
13 T. Oh, IEEE Trans. Nanotechnology, 5, 23 (2006)   DOI   ScienceOn
14 T. Oh and C. K. Choi, J. Korean Phys. Soc., 56, 1150 (2010)   DOI   ScienceOn
15 S. Akasaka, K. Tamura, K. Nakahara, T. Tanabe, A. Kamisawa, and M. Kawasaki1, Appl. Phys. Lett., 93, 123309 (2008).   DOI   ScienceOn