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http://dx.doi.org/10.4313/JKEM.2005.18.3.276

Fabrication and Characteristics of Magnetic Tunneling Transistors using the Amorphous n-Type Si Films  

Lee, Sang-Suk (상지대학교 컴퓨터전자물리학과)
Lee, Jin-Yong (상지대학교 컴퓨터전자물리학과)
Hwang, Do-Guwn (상지대학교 컴퓨터전자물리학과)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.18, no.3, 2005 , pp. 276-283 More about this Journal
Abstract
Magnetic tunneling transistor (MTT) device using the amorphous n-type Si semiconductor film for base and collector consisting of the [CoFe/NiFe](free layer) and Si(top layer) multilayers was used to study the spin-dependent hot electron magnetocurrent (MC) and tunneling magnetoresistance (TMR) at room temperature. A large MC of 40.2 % was observed at the emitter-base bias voltage ( $V_{EB}$ ) of 0.62 V. The increasing emitter hot current and transfer ratio ( $I_{C}$/ $I_{E}$) as $V_{EB}$ are mainly due to a rapid increase of the number of conduction band states in the Si collector. However, above the $V_{EB}$ of 0.62 V, the rapid decrease of MC was observed in amorphous Si-based MTT because of hot electron spin-dependent elastic scattering across CoFe/Si interfaces.
Keywords
Amorphous n-type Si films; Magnetic tunneling transistor(MTT); Magnetic tunneling junction(MTJ); Hot electron; Magnetocurrent(MC);
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