• Korean Management Science Review
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• v.27 no.3
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• pp.197-211
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• 2010

This research applies Blattberg's CE (customer equity) model to B2B business context. Through the model we estimate customer lifetime value of a Korean semiconductor manufacturer. The results show that Blattberg model has limiting applicability to B2B business context. To overcome the limits, several suggestions were made. The main suggestion was predicting maintenance costs for different customers groups and including decision variables regarding marketing costs that would help building a differentiated CE model for the B2B business context.

• Korean Journal of Materials Research
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• v.18 no.1
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• pp.45-50
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• 2008

Microstructural evolution and the intermetallic compound (IMC) growth kinetics in an Au stud bump were studied via isothermal aging at 120, 150, and $180^{\circ}C$ for 300hrs. The $AlAu_4$ phase was observed in an Al pad/Au stud interface, and its thickness was kept constant during the aging treatment. AuSn, $AuSn_2,\;and\;AuSn_4$ phases formed at interface between the Au stud and Sn. $AuSn_2,\;AuSn_2/AuSn_4$, and AuSn phases dominantly grew as the aging time increased at $120^{\circ}C,\;150^{\circ}C,\;and\;180^{\circ}C$, respectively, while $(Au,Cu)_6Sn_5/Cu_3Sn$ phases formed at Sn/Cu interface with a negligible growth rate. Kirkendall voids formed at $AlAu_4/Au$, Au/Au-Sn IMC, and $Cu_3Sn/Cu$ interfaces and propagated continuously as the time increased. The apparent activation energy for the overall growth of the Au-Sn IMC was estimated to be 1.04 eV.

• Korean Journal of Metals and Materials
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• v.47 no.1
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• pp.26-31
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• 2009

The effects of $Ar/O_2$ ion-beam pre-treatment conditions on the interfacial adhesion energy of sputterdeposited Cu thin film to FR-4 substrate were systematically investigated in order to understand the interfacial bonding mechanism for practical application to advanced chip-in-substrate package systems. Measured peel strength increases from $45.8{\pm}5.7g/mm$ to $61.3{\pm}2.4g/mm$ by $Ar/O_2$ ion-beam pre-treatment with anode voltage of 64 V. Interfacial bonding mechanism between sputter-deposited Cu film and FR-4 substrate seems to be dominated by chemical bonding effect rather than mechanical interlocking effect. It is found that chemical bonding intensity between carbon and oxygen at FR-4 surface increases due to $Ar/O_2$ ion-beam pretreatment, which seems to be related to the strong adhesion energy between sputter-deposited Cu film and FR-4 substrate.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2002.09a
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• pp.79-94
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• 2002

Root cause -Thermal expansion coefficient mismatch -Tape warpage -Initial die crack (die roughness) Guideline for failure prevention -Optimized tape/Substrate design for minimizing the warpage -Fine surface of die backside Root cause -Thermal expansion coefficient mismatch - Repetitive bending of a signal trace during TC cycle - Solder mask damage Guideline for failure prevention - Increase of trace width - Don't make signal trace passing the die edge - Proper material selection with thick substrate core Root cause -Thermal expansion coefficient mismatch -Creep deformation of solder joint(shear/normal) -Material degradation Guideline for failure Prevention -Increase of solder ball size -Proper selection of the PCB/Substrate thickness -Optimal design of the ball array -Solder mask opening type : NSMD -In some case, LGA type is better

• ETRI Journal
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• v.36 no.4
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• pp.617-624
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• 2014

Through-silicon via (TSV) technology provides much of the benefits seen in advanced packaging, such as three-dimensional integrated circuits and 3D packaging, with shorter interconnection paths for homo- and heterogeneous device integration. In TSV, a destructive cross-sectional analysis of an image from a scanning electron microscope is the most frequently used method for quality control purposes. We propose a quantitative evaluation method for TSV etch profiles whereby we consider sidewall angle, curvature profile, undercut, and scallop. A weighted sum of the four evaluated parameters, nominally total score (TS), is suggested for the numerical evaluation of an individual TSV profile. Uniformity, defined by the ratio of the standard deviation and average of the parameters that comprise TS, is suggested for the evaluation of wafer-to-wafer variation in volume manufacturing.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.09a
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• pp.19-39
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• 2003

Embedded Laminate Embedded RF Functional Blocks.Base Library of Laminate Embedded Filters and Baluns developed for 2.4GHz Applications -S-Parameters are provided at connection points -Utilizes a low cost 2 core construction.Statistical Variation Study in Report Phase.Measurements over variants show solid performance.Filters and Baluns are available for customer use.Laminate Embedded RF Functions - Various Filters, BALUNs, couplers, etc. for Bluetooth, 802.11, and Cellular.LTCC Embedded RF Functions - Various Filters, BALLNs, Diplexers, Antenna Switches, couplers, etc. for Bluetooth, 802.11, and Cellular.Eulbedded Passives - Various Inductor topologies Performance different than ideal or discrete inductor Must look at inductor performance in overall RF function - Working on embedded ceramic capacitors in laminate . Embedded Shields - Program in place to identify and define key design rules

• Electronics and Telecommunications Trends
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• v.39 no.3
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• pp.98-106
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• 2024

Advanced packaging is emerging as a core technology owing to the increasing demand for multifunctional and highly integrated semiconductors to achieve low power and high performance following digital transformation. It may allow to overcome current limitations of semiconductor process miniaturization and enables single packaging of individual devices. The introduction of advanced packaging facilitates the integration of various chips into one device, and it is emerging as a competitive edge in the industry with high added value, possibly replacing traditional packaging that focuses on electrical connections and the protection of semiconductor devices.

• Journal of the Microelectronics and Packaging Society
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• v.14 no.4
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• pp.15-20
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• 2007

Growth kinetics of intermetallic compound (IMC) at various interface in Cu pillar bump during aging have been studied by thermal aging at 120, 150 and $165^{\circ}C$ for 300h. In result, $Cu_6Sn_5\;and\;Cu_3Sn$ were observed in the Cu pillar/SnPb interface and IMC growth followed parabolic law with increasing aging temperatures and time. Also, growth kinetics of IMC layer was faster for higher aging temperature with time. Kirkendall void formed at interface between Cu pillar and $Cu_3Sn$ as well as within the $Cu_3Sn$ layer and propagated with increasing time. $(Cu,Ni)_6Sn_5$ formed at interface between SnPb and Ni(P) after reflow and thickness change of $(Cu,Ni)_6Sn_5$ didn't observe with aging time. The apparent activation energies for growth of total $(Cu_6Sn_5+Cu_3Sn),\;Cu_6Sn_5\;and\;Cu_3Sn$ intermetallics from measurement of the IMC thickness with thermal aging temperature and time were 1.53, 1.84 and 0.81 eV, respectively.

• Journal of the Microelectronics and Packaging Society
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• v.15 no.4
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• pp.17-24
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• 2008

Thermal annealing and electromigration test were performed at $150^{\circ}C$ and $150^{\circ}C,\;5{\times}10^4\;A/cm^2$ conditions, respectively, in order to compare the growth kinetics of intermetallic compound(IMC) in Cu pillar bump. The quantitative interfacial adhesion energy with annealing was measured by using four-point bending strength test in order to assess the effect of IMC growth on the mechanical reliability of Cu pillar bump. Only $Cu_6Sn_5$ was observed in the Cu pillar/Sn interface after reflow. However, $Cu_3Sn$ formed and grew at Cu pillar/$Cu_6Sn_5$ interface with increasing annealing and stressing time. The growth kinetics of total($Cu_6Sn_5+Cu_3Sn$) IMC changed when all Sn phases in Cu pillar bump were exhausted. The complete consumption time of Sn phase in electromigration condition was faster than that in annealing condition. The quantitative interfacial adhesion energy after 24h at $180^{\circ}C$ was $0.28J/m^2$ while it was $3.37J/m^2$ before annealing. Therefore, the growth of IMC seem to strongly affect the mechanical reliability of Cu pillar bump.

• Korean Journal of Metals and Materials
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• v.49 no.2
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• pp.180-186
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• 2011

Isothermal annealing and electromigration tests were performed at $125^{\circ}C$ and $125^{\circ}C$, $3.6{\times}10_4A/cm^2$ conditions, respectively, in order to compare the growth kinetics of the intermetallic compound (IMC) in the Cu/thin Sn/Cu bump. $Cu_6Sn_5$ and $Cu_3Sn$ formed at the Cu/thin Sn/Cu interfaces where most of the Sn phase transformed into the $Cu_6Sn_5$ phase. Only a few regions of Sn were not consumed and trapped between the transformed regions. The limited supply of Sn atoms and the continued proliferation of Cu atoms enhanced the formation of the $Cu_3Sn$ phase at the Cu pillar/$Cu_6Sn_5$ interface. The IMC thickness increased linearly with the square root of annealing time, and increased linearly with the current stressing time, which means that the current stressing accelerated the interfacial reaction. Abrupt changes in the IMC growth velocities at a specific testing time were closely related to the phase transition from $Cu_6Sn_5$ to $Cu_3Sn$ phases after complete consumption of the remaining Sn phase due to the limited amount of the Sn phase in the Cu/thin Sn/Cu bump, which implies that the relative thickness ratios of Cu and Sn significantly affect Cu-Sn IMC growth kinetics.