• 한국세라믹학회지
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• 제23권1호
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• pp.33-43
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• 1986

The synthesis of high-purity AlN by a vapor-phase reaction was investigated using the $NH_3-AlCl_3-H_2$ reacting system. The theoretical yields of AlN were determined from th thermodynamic equilibrium composi-tions. It was shown that the yields above 90% could by obtained even in the range of relatively low temper-ature of 600-1200K. The reaction temperature and the initial amounts/ratios of the reacting gases showed significant effects on the yields but the total pressure did not. The experimental results showed that a high-purity AlN having a needle shape was the only product as a solid phase and its amount produced increased with the reaction temperature. While the degree of agglmera-tion of the synthesized AlN increased with the reaction temperature the size of each particle consisting of the agglomerates was independent of the temperature but grew from 0.09 to 0.115${\mu}{\textrm}{m}$ with the flow rate of NH3. These experimental results were compared with the theoretical aspects for the synthesis of a high-purity AlN.

• 한국재료학회지
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• 제31권12호
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• pp.697-703
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• 2021

Aluminum nitride having a dense hexagonal structure is used as a high-temperature material because of its excellent heat resistance and high mechanical strength; its excellent piezoelectric properties are also attracting attention. The structure and residual stress of AlN thin films formed on glass substrate using TFT sputtering system are examined by XRD. The deposition conditions are nitrogen gas pressures of 1 × 10^-2, 6 × 10^-3, and 3 × 10^-3, substrate temperature of 523 K, and sputtering time of 120 min. The structure of the AlN thin film is columnar, having a c-axis, i.e., a <00·1> orientation, which is the normal direction of the glass substrate. An X-ray stress measurement method for crystalline thin films with orientation properties such as columnar structure is proposed and applied to the residual stress measurement of AlN thin films with orientation <00·1>. Strength of diffraction lines other than 00·2 diffraction is very weak. As a result of stress measurement using AlN powder sample as a comparative standard sample, tensile residual stress is obtained when the nitrogen gas pressure is low, but the gas pressure increases as the residual stress is shifts toward compression. At low gas pressure, the unit cell expands due to the incorporation of excess nitrogen atoms.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.224-225
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• 2009

Aluminium nitride thin film was deposited on Au electrode and Si substrate by radio frequency sputtering system. X-ray diffraction (XRD) was utilized to identify the AlN phase, and Atomic Force Microscope (AFM) was used to obtain the images of surface morphology and roughness value of AlN thin film. The result of XRD and AFM measurement showed that the AlN thin film has strong c-axs orientation and smooth surface. In order to investigate piezoelectric response and polarization properties along to the direction of electric field, PFM (Piezoresponse Force Microscope) system was used, and the images of piezoelectric response due to switching of polarization was observed by PFM.

• 한국기계가공학회지
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• 제3권4호
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• pp.29-36
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• 2004

An experimental study on drilling of stainless steel is conducted using TiAlN coated drills and HSS twist drills with several cutting conditions; feed rate, spindle rotational speed, and dry/wet cutting. The effects of number of hole on the thrust force are examined by cutting force measurement. The flank wear of the drills and the change of hole diameter are quantitatively observed using a vision system. It is found that the thrust force in drilling with TiAlN coated drills decrease under dry and wet machining, whereas the flank wear resistance is improved.

• 한국표면공학회지
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• 제50권5호
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• pp.339-344
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• 2017

Highly corrosion resistance performance of CrAlSiN coatings were obtained by applying ultrathin $Al_2O_3$ thin films using atomic layer deposition (ALD) method. CrAlSiN coatings were prepared on Cr adhesion layer/SUS304 substrates by a hybrid coating system of arc ion plating and high power impulse magnetron sputtering (HiPIMS) method. And, ultrathin $Al_2O_3$ passivation layer was deposited on the CrAlSiN/Cr adhesion layer/SUS304 sample to protect CrAlSiN coatings by encapsulating the whole surface defects of coating using ALD. Here, the high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) and energy dispersive X-ray spectrometry (EDX) analysis revealed that the ALD $Al_2O_3$ thin films uniformly covered the inner and outer surface of CrAlSiN coatings. Also, the potentiodynamic and potentiostatic polarization test revealed that the corrosion protection properties of CrAlSiN coatings/Cr/SUS304 sample was greatly improved by ALD encapsulation with 50 nm-thick $Al_2O_3$ thin films, which implies that ALD-$Al_2O_3$ passivation layer can be used as an effect barrier layer of corrosion.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.71-72
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• 2008

In this paper, the effect of thermal annealing on surface acoustic wave (SAW) properties of aluminum nitride (AlN) films were described. The films were fabricated on Si substrates by using Pulsed Reactive Magnetron Sputtering System. The SAW properties of $600^{\circ}C$-annealed AlN films were better than those of both $900^{\circ}C$-annealed AlN films and as-deposited ones. Their SAW velocities (Raleigh mode) and insertion losses were about 5212 m/s and 16.19 dB at $600^{\circ}C$ with the wavelength of $40{\mu}m$. The dependence of characteristics of AlN films on annealing conditions were also evaluated by using Fourier Transform-Infrared Spectroscopy (FT-IR) Spectrums and Atomic Force Microscopy (AFM).

• 동력기계공학회지
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• 제12권3호
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• pp.60-65
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• 2008

This study aims at investigating the wear properties of thermally sprayed $Al/Al_2O_3$ metal matrix composite(MMC) coating against different counterparts. $Al/Al_2O_3$ MMC coatings were fabricated using a flame spray system on an Al 6061 substrate. Dry sliding wear tests were performed using the sliding speeds of 0.2m/s and the applied loads of 1 and 2 N. AISI 52100, $Al_2O_3$, $Si_3N_4\;and\;ZrO_2$ balls(diameter: 8mm) were used as counterpart materials. Wear properties of $Al/Al_2O_3$ MMC coatings were analyzed using a scanning electron microscope(SEM) and energy dispersive X-ray spectroscopy (EDX). It was revealed that wear properties of $Al/Al_2O_3$ composite coatings were much influenced by counterpart materials. In the case of AISI 52100 used as counterparts, the wear rate of composites coating layer increased according to the increase of the applied load. On the contrary, in the case of ceramics used as counterparts, the wear rate of composites coating layer decreased according to the increase of the applied load.

• 한국분말재료학회지
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• 제15권6호
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• pp.496-502
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• 2008

Aluminum nitride (AlN) powders were prepared by the chemical vapor synthesis (CVS) process in the $AlCl_{3}-NH_{3}-N_{2}$ system. Aluminum chloride ($AlCl_3$) as the starting material was gasified in the heating chamber of $300^{\circ}C$. Aluminum chloride gas transported to the furnace in $NH_{3}-N_{2}$ atmosphere at the gas flow rate of 200-400ml/min. For samples synthesized between 700 and $1200^{\circ}C$, the XRD peaks corresponding to AlN were comparatively sharp and also showed an improvement of crystallinity with increasing the reaction temperature. In additions, the average particle size of the AlN powders decreased from 250 to 40 nm, as the reaction temperature increased.

• JSTS:Journal of Semiconductor Technology and Science
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• 제14권4호
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• pp.478-483
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• 2014

We propose a new method which can extract the information about the electronic traps in the semi-insulating GaN buffer of AlGaN/GaN heterostructure field-effect transistors (HFETs) using a simple test structure. The proposed method has a merit in the easiness of fabricating the test structure. Moreover, the electric fields inside the test structure are very similar to those inside the actual transistor, so that we can extract the information of bulk traps which directly affect the current collapse behaviors of AlGaN/GaN HEFTs. By applying the proposed method to the GaN buffer structures with various unintentionally doped GaN channel thicknesses, we conclude that the incorporated carbon into the GaN back barrier layer is the dominant origin of the bulk trap which affects the current collapse behaviors of AlGaN/GaN HEFTs.

• 한국결정성장학회지
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• 제19권1호
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• pp.6-10
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• 2009

본 논문에서는 혼합소스(mixed-source) HVPE(hydride vapor phase epitaxy)방법으로 선택성장(SAC: selective area growth) GaN/AlGaN 이종접합구조의 발광다이오드를 r-plane 사파이어 기판 위에 제작하였다. SAG-GaN/AlGaN DH(double heterostructure)는 고온 GaN 버퍼층, Te 도핑된 AlGaN n-클래딩층. Gan 활성층. Mg 도핑된 AlGaN p-클래딩층. Mg 도핑된 GaN p-캡층으로 구성되어있다. GaN/AlGaN 이종접합구조의 발광다이오드의 특성을 알아보기 위해 SEM을 통한 구조적 분석과 전류-전압 측정(I-V: current-voltage measurement), 전류-광출력(EL: electroluminescence) 측정을 통하여 전기적, 광학적 특성을 평가하였다.