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Characteristics of selective area growth of GaN/AlGaN double heterostructure grown by hydride vapor phase epitaxy on r-plane sapphire substrate  

Hong, S.H. (Department of Applied Science, Korea Maritime University)
Jeon, H.S. (Department of Applied Science, Korea Maritime University)
Han, Y.H. (Department of Applied Science, Korea Maritime University)
Kim, E.J. (Department of Applied Science, Korea Maritime University)
Lee, A.R. (Department of Applied Science, Korea Maritime University)
Kim, K.H. (Department of Applied Science, Korea Maritime University)
Hwang, S.L. (Department of Applied Science, Korea Maritime University)
Ha, H. (Department of Applied Science, Korea Maritime University)
Ahn, H.S. (Department of Applied Science, Korea Maritime University)
Yang, M. (Department of Applied Science, Korea Maritime University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.19, no.1, 2009 , pp. 6-10 More about this Journal
Abstract
In this paper, a selective area growth (SAG) of a GaN/AlGaN double heterostructure (DH) has been performed on r-plane sapphire substrate by using the mixed-source hydride vapor phase epitaxy (HVPE) with multi-sliding boat system. The SAG-GaN/AlGaN DH consists of GaN buffer layer, Te-doped AlGaN n-cladding layer, GaN active layer, Mg-doped AlGaN p-cladding layer, and Mg-doped GaN p-capping layer. The electroluminescence (EL) characteristics show an emission peak of wavelength, 439 nm with a full width at half maximum (FWHM) of approximately 0.64 eV at 20 mA. The I-V measurements show that the turn-on voltage of the SAG-GaN/AlGaN DH is 3.4 V at room temperature. We found that the mixed-source HVPE method with a multi-sliding boat system was one of promising growth methods for III-Nitride LEDs.
Keywords
Hydride vapor phase epitaxy; r-Plane sapphire; a-Plane GaN; Mixed-source; Selective area growth; Double heterostructure; HVPE; LED;
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