• Title/Summary/Keyword: Al-AlN system

Search Result 492, Processing Time 0.038 seconds

Improving PAPR performance of filtered OFDM for 5G communications using PTS

  • Al-Jawhar, Yasir Amer;Ramli, Khairun N.;Taher, Montadar Abas;Shah, Nor Shahida M.;Mostafa, Salama A.;Khalaf, Bashar Ahmed
    • ETRI Journal
    • /
    • v.43 no.2
    • /
    • pp.209-220
    • /
    • 2021
  • The filtered orthogonal frequency division multiplexing (F-OFDM) system has been recommended as a waveform candidate for fifth-generation (5G) communications. The suppression of out-of-band emission (OOBE) and asynchronous transmission are the distinctive features of the filtering-based waveform frameworks. Meanwhile, the high peak-to-average power ratio (PAPR) is still a challenge for the new waveform candidates. Partial transmit sequence (PTS) is an effective technique for mitigating the trend of high PAPR in multicarrier systems. In this study, the PTS technique is employed to reduce the high PAPR value of an F-OFDM system. Then, this system is compared with the OFDM system. In addition, the other related parameters such as frequency localization, bit error rate (BER), and computational complexity are evaluated and analyzed for both systems with and without PTS. The simulation results indicate that the F-OFDM based on PTS achieves higher levels of PAPR, BER, and OOBE performances compared with OFDM. Moreover, the BER performance of F-OFDM is uninfluenced by the use of the PTS technique.

Etching Property of the TaN Thin Film using an Inductively Coupled Plasma (유도결합플라즈마를 이용한 TaN 박막의 식각 특성)

  • Um, Doo-Seung;Woo, Jong-Chang;Kim, Dong-Pyo;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 2009.06a
    • /
    • pp.104-104
    • /
    • 2009
  • Critical dimensions has rapidly shrunk to increase the degree of integration and to reduce the power consumption. However, it is accompanied with several problems like direct tunneling through the gate insulator layer and the low conductivity characteristic of poly-silicon. To cover these faults, the study of new materials is urgently needed. Recently, high dielectric materials like $Al_2O_3$, $ZrO_2$ and $HfO_2$ are being studied for equivalent oxide thickness (EOT). However, poly-silicon gate is not compatible with high-k materials for gate-insulator. To integrate high-k gate dielectric materials in nano-scale devices, metal gate electrodes are expected to be used in the future. Currently, metal gate electrode materials like TiN, TaN, and WN are being widely studied for next-generation nano-scale devices. The TaN gate electrode for metal/high-k gate stack is compatible with high-k materials. According to this trend, the study about dry etching technology of the TaN film is needed. In this study, we investigated the etch mechanism of the TaN thin film in an inductively coupled plasma (ICP) system with $O_2/BCl_3/Ar$ gas chemistry. The etch rates and selectivities of TaN thin films were investigated in terms of the gas mixing ratio, the RF power, the DC-bias voltage, and the process pressure. The characteristics of the plasma were estimated using optical emission spectroscopy (OES). The surface reactions after etching were investigated using X-ray photoelectron spectroscopy (XPS) and auger electron spectroscopy (AES).

  • PDF

Development of a University-Based Simplified H2O2/PE Hybrid Sounding Rocket at KAIST

  • Huh, Jeongmoo;Ahn, Byeonguk;Kim, Youngil;Song, Hyunki;Yoon, Hosung;Kwon, Sejin
    • International Journal of Aeronautical and Space Sciences
    • /
    • v.18 no.3
    • /
    • pp.512-521
    • /
    • 2017
  • This paper reports development process of a university-based sounding rocket using simplified hybrid rocket propulsion system for low-altitude flight application. A hybrid propulsion system was tried to be designed with as few components as possible for more economical, simpler and safer propulsion system, which is essential for the small scale sounding rocket operation as a CanSat carrier. Using blow-down feeding system and catalytic ignition as combustion starter, 250 N class hybrid rocket system was composed of three components: a composite tank, valves, and a thruster. With a composite tank filled with both hydrogen peroxide($H_2O_2$) as an oxidizer and nitrogen gas($N_2$) as a pressurant, the feeding pressure was operated in blowdown mode during thruster operation. The $MnO_2/Al_2O_3$ catalyst was fabricated for propellant decomposition, and ground test of propulsion system showed the almost theoretical temperature of decomposed $H_2O_2$ at the catalyst reactor, indicating sufficient catalyst efficiency for propellant decomposition. Auto-ignition of the high density polyethylene(HDPE) fuel grain successfully occurred by the decomposed $H_2O_2$ product without additional installation of any ignition devices. Performance test result was well matched with numerical internal ballistics conducted prior to the experimental propulsion system ground test. A sounding rocket using the developed hybrid rocket was designed, fabricated, flight simulated and launch tested. Six degree-of-freedom trajectory estimation code was developed and the comparison result between expected and experimental trajectory validated the accuracy of the developed trajectory estimation code. The fabricated sounding rocket was successfully launched showing the effectiveness of the simplified hybrid rocket propulsion system.

Design and Growth of InAs Multi-Quantum Dots and InGaAs Multi-Quantum Wells for Tandem Solar Cell (텐덤형 태양전지를 위한 InAs 다중 양자점과 InGaAs 다중 양자우물에 관한 연구)

  • Cho, Joong-Seok;Kim, Sang-Hyo;HwangBoe, Sue-Jeong;Janng, Jae-Ho;Choi, Hyon-Kwang;Jeon, Min-Hyon
    • Journal of the Korean Vacuum Society
    • /
    • v.18 no.5
    • /
    • pp.352-357
    • /
    • 2009
  • The InAs multi-quantum dots (MQDs) solar cell and InGaAs multi-quantum wells (MQWs) solar cell to cover 1.1 eV and 1.3 eV were designed by 1D poisson, respectively. The MQDs and MQWs of 5, 10, 15 layers were grown by molecular beam epitaxy. The photo luminescence results showed that the 5 period stacked MQDs have the highest intensity at around 1.1 eV with 57.6 meV full width at half maximum (FWHM). Also we can observe 10 period stacked MQWs peak position which has highest intensity at 1.31 eV with 12.37 meV FWHM. The density and size of QDs were observed by reflection high energy electron diffraction pattern and atomic force microscope. Futhermore, AlGaAs/GaAs sandwiched tunnel junctions were modified according to the width of GaAs layer on p-type GaAs substrates. The structures with GaAs width of 30 nm and 50 nm have backward diode characteristics. In contrast, tunnel diode characteristics were observed in the 20 nm of that of sample.

Atomistic simulation of surface passivated wurtzite nanowires: electronic bandstructure and optical emission

  • Chimalgi, Vinay U.;Nishat, Md Rezaul Karim;Yalavarthi, Krishna K.;Ahmed, Shaikh S.
    • Advances in nano research
    • /
    • v.2 no.3
    • /
    • pp.157-172
    • /
    • 2014
  • The three-dimensional Nano-Electronic Modeling toolkit (NEMO 3-D) is an open source software package that allows the atomistic calculation of single-particle electronic states and optical response of various semiconductor structures including bulk materials, quantum dots, impurities, quantum wires, quantum wells and nanocrystals containing millions of atoms. This paper, first, describes a software module introduced in the NEMO 3-D toolkit for the calculation of electronic bandstructure and interband optical transitions in nanowires having wurtzite crystal symmetry. The energetics (Hamiltonian) of the quantum system under study is described via the tight-binding (TB) formalism (including $sp^3$, $sp^3s^*$ and $sp^3d^5s^*$ models as appropriate). Emphasis has been given in the treatment of surface atoms that, if left unpassivated, can lead to the creation of energy states within the bandgap of the sample. Furthermore, the developed software has been validated via the calculation of: a) modulation of the energy bandgap and the effective masses in [0001] oriented wurtzite nanowires as compared to the experimentally reported values in bulk structures, and b) the localization of wavefunctions and the optical anisotropy in GaN/AlN disk-in-wire nanowires.

The Chemical Composition of V1719 Cyg: δ Scuti Type Star without the Accretion of Interstellar Matter

  • Yushchenko, Alexander V.;Kim, Chulhee;Jeong, Yeuncheol;Doikov, Dmytry N.;Yushchenko, Volodymyr A.;Khrapatyi, Sergii V.;Demessinova, Aizat
    • Journal of Astronomy and Space Sciences
    • /
    • v.37 no.3
    • /
    • pp.157-163
    • /
    • 2020
  • High resolution spectroscopic observation of V1719 Cyg were made at 1.8 meter telescope of Bohyunsan Optical Astronomy observatory in Korea. Spectral resolving power was R=45,000, signal to noise ratio S/N>100. The abundances of 28 chemical elements from carbon to dysprosium were found with the spectrum synthesis method. The abundances of oxygen, titanium, vanadium and elements with Z>30 are overabundant by 0.2-0.9 dex with respect to the solar values. Correlations of derived abundances with condensation temperatures and second ionization potentials of these elements are discussed. The possible influence of accretion from interstellar environment is not so strong as for ρ Pup and other stars with similar temperatures. The signs of accretion are absent. The comparison of chemical composition with solar system r- & s-process abundance patterns shows the enhancement of the photosphere by s-process elements.

Comparison of stabilities in carbon nanotubes grown on a submicron-sized tip in terms of various buffer and catalyst materials (미세크기 팁 위에 성장된 탄소 나노튜브의 완충막 및 촉매 금속에 따른 안정성 비교)

  • Kim, Jong-Pil;Kim, Young-Kwang;Park, Chang-Kyun;Park, Jin-Seok
    • Proceedings of the KIEE Conference
    • /
    • 2008.07a
    • /
    • pp.1224-1225
    • /
    • 2008
  • The results of the experiment that was conducted on the electron emission property and the long-term stability of the emission current in various carbon nanotubes (CNTs)-based field emitters with a CNT/catalyst/buffer/W-tip configuration are presented herein. CNT-based field emitters were fabricated by varying the (TiN, Al/Ni/TiN) buffer layer and the (Ni, Co) catalyst material. This study aimed to elucidate how the buffer layers and catalyst materials affect the structural properties of CNTs and the long-term stability of CNT emitters. Raman spectroscopy, field emission SEM, and high-resolution TEM were used to analyze the crystalline structure, surface morphologies, and nanostructures of all the grown CNTs. X-ray photoelectron spectroscopy (XPS) was used to monitor the chemical bonds of all the buffer layers and catalysts. Electron emission measurement and a long-term (up to 40h) stability test were carried out using a compactly designed field emission measurement system.

  • PDF

MYLLER CONFIGURATIONS IN FINSLER SPACES. APPLICATIONS TO THE STUDY OF SUBSPACES AND OF TORSE FORMING VECTOR FIELDS

  • Constantinescu, Oana
    • Journal of the Korean Mathematical Society
    • /
    • v.45 no.5
    • /
    • pp.1443-1482
    • /
    • 2008
  • In this paper we define a Myller configuration in a Finsler space and use some special configurations to obtain results about Finsler subspaces. Let $F^{n}$ = (M,F) be a Finsler space, with M a real, differentiable manifold of dimension n. Using the pull back bundle $({\pi}^{*}TM,\tilde{\pi},\widetilde{TM})$ of the tangent bundle $(TM,{\pi},M)$ by the mapping $\tilde{\pi}={\pi}/TM$ and the Cartan Finsler connection of a Finsler space, we obtain an orthonormal frame of sections of ${\pi}^{*}TM$ along a regular curve in $\widetilde{TM}$ and a system of invariants, geometrically associated to the Myller configuration. The fundamental equations are written in a very simple form and we prove a fundamental theorem. Important lines in a Finsler subspace are defined like special lines in a Myller configuration, geometrically associated to the subspace: auto parallels, lines of curvature, asymptotes. Torse forming vector fields with respect to the Cartan Finsler connection are characterized by means of the invariants of the Frenet frame of a versor field along a curve, and the new notion of torse forming vector fields in the sense of Myller is introduced. The particular cases of concurrence and parallelism in the sense of Myller are completely studied, for vector fields from the distribution $T^m$ of the Myller configuration and also from the normal distribution $T^p$.

Direct printing of organic single crystal nanowire arrays by using Liquid-bridge-mediated nanotransfer molding

  • Oh, Hyun-S.;Baek, Jang-Mi;Sung, Myung-M.
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2011.02a
    • /
    • pp.473-473
    • /
    • 2011
  • In recent years, organic thin film transistors OTFTs based on conductive-conjugated molecules have received significant attention. We report a fabrication of organic single crystal nanowires that made on Si substrates by liquid bridge-mediated nanotransfer molding (LB-nTM) with polyurethane acrylate (PUA) mold. LB-nTM is based on the direct transfer of various materials from a stamp to a substrate via a liquid bridge between them. In liquid bridge-transfer process, the liquid layer serves as an adhesion layer to provide good conformal contact and form covalent bonding between the organic single crystal nanowire and the Si substrate. Pentacene is the most promising organic semiconductors. However pentacene has insolubility in organic solvents so pentacene OTFTs can be achieved with vacuum evaporation system. However 6, 13-bis (triisopropylsilylethynyl) (TIPS) pentacene has high solubility in organic solvent that reported by Anthony et al. Furthermore, the substituted rings in TIPS-pentacene interrupt the herringbone packing, which leads to cofacial ${\pi}-{\pi}$ stacking. The patterned TIPS-Pentacene single crystal nanowires have been investigated by Atomic force microscopy (AFM), Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Scanning Electron Microscopy (SEM) and electrical properties.

  • PDF

The Reaction Probability and the Reaction Cross-section of N + O2→ NO + O Reaction Computed by the 6th-order Explicit Symplectic Algorithm

  • He, Jianfeng;Li, Jing
    • Bulletin of the Korean Chemical Society
    • /
    • v.27 no.12
    • /
    • pp.1976-1980
    • /
    • 2006
  • We have calculated the reaction probability and the reaction cross-section of the $N(^4S)+O_2(X^3\sum_{g}^{-})\;\rightarrow\;NO(X^2\Pi)+O(^3P)$ reaction by the quasiclassical trajectory method with the 6th-order explicit symplectic algorithm, based on a new ground potential energy surface. The advantage of the 6th-order explicit symplectic algorithm, conserving both the total energy and the total angular momentum of the reaction system during the numerical integration of canonical equations, has firstly analyzed in this work, which make the calculation of the reaction probability more reliable. The variation of the reaction probability with the impact parameter and the influence of the relative translational energy on the reaction cross-section of the reaction have been discussed in detail. And the fact is found by the comparison that the reaction probability and the reaction cross-section of the reaction estimated in this work are more reasonable than the theoretical ones determined by Gilibert et al.