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http://dx.doi.org/10.5757/JKVS.2009.18.5.352

Design and Growth of InAs Multi-Quantum Dots and InGaAs Multi-Quantum Wells for Tandem Solar Cell  

Cho, Joong-Seok (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Kim, Sang-Hyo (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
HwangBoe, Sue-Jeong (Dyesol-timo, Research Institute of DSC)
Janng, Jae-Ho (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Choi, Hyon-Kwang (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Jeon, Min-Hyon (Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University)
Publication Information
Journal of the Korean Vacuum Society / v.18, no.5, 2009 , pp. 352-357 More about this Journal
Abstract
The InAs multi-quantum dots (MQDs) solar cell and InGaAs multi-quantum wells (MQWs) solar cell to cover 1.1 eV and 1.3 eV were designed by 1D poisson, respectively. The MQDs and MQWs of 5, 10, 15 layers were grown by molecular beam epitaxy. The photo luminescence results showed that the 5 period stacked MQDs have the highest intensity at around 1.1 eV with 57.6 meV full width at half maximum (FWHM). Also we can observe 10 period stacked MQWs peak position which has highest intensity at 1.31 eV with 12.37 meV FWHM. The density and size of QDs were observed by reflection high energy electron diffraction pattern and atomic force microscope. Futhermore, AlGaAs/GaAs sandwiched tunnel junctions were modified according to the width of GaAs layer on p-type GaAs substrates. The structures with GaAs width of 30 nm and 50 nm have backward diode characteristics. In contrast, tunnel diode characteristics were observed in the 20 nm of that of sample.
Keywords
Tandem solar cell; Quantum dot; Quantum well; Tunnel junction;
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