• 한국표면공학회지
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• 제53권5호
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• pp.249-256
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• 2020

As the size of manufacturing equipment for LCD and OLED displays increases, replacement of existing heavy stainless steel components with light metals, such as aluminum alloys, is being more important in semiconducting and display manufacturing industries. To use aluminum alloys for components in semiconducting and display industries, it is important to develop a new anodization method for improved performance of anodic oxide films than conventional anodization method based on sulfuric acid. In this work, optimum applied current density and the best sealing methods for anodic oxide films in 3% oxalic acid were explored. Experimental results showed 2.5 A/dm2 is the best applied current density for improved hardness and dielectric breakdown voltage. Sealing of the anodic oxide films further improved their hardness, dielectric breakdown voltage and resistance to HCl, by which application of anodic oxide films become applicable for components in semiconducting and display industries.

• 대한전자공학회논문지SD
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• 제47권4호
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• pp.69-74
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• 2010

알루미늄 양극산화(aluminum anodization)의 선택적인 적용을 통하여 DRAM 소자를 위한 새로운 패키지 기판을 제작하였다. 에폭시 계열의 코어(core)와 구리의 적층 형태로 제작되는 일반적인 패키지 기판과는 달리 제안된 패키지 기판은 아래층 알루미늄(aluminum), 중간층 알루미나(alumina, $Al_2O_3$) 그리고 위층 구리(copper)로 구성된다. 알루미늄 기판에 양극산화 공정을 수행함으로써 두꺼운 알루미나를 얻을 수 있으며 이를 패키지 기판의 유전체로 사용할 수 있다. 알루미나층 위에 구리 패턴을 배치함으로써 새로운 2층 금속 구조의 패키지 기판을 완성하게 된다. 또한 알루미늄 양극산화를 선택적인 영역에만 적용하여 내부가 완전히 채워져 있는 비아(via) 구조를 구현할 수 있다. 패키지 설계 시에 비아 인 패드(via in pad) 구조를 적용하여 본딩 패드(bonding pad) 및 볼 패드(ball pad) 상에 비아를 배치하였다. 상기 비아 인 패드 배치 및 2층 금속 구조로 인해 패키지 기판의 배선 설계가 보다 수월해지고 설계 자유도가 향상된다. 새로운 패키지 기판의 주요 설계인자를 분석하고 최적화하기 위하여 테스트 패턴의 2차원 전자기장 시뮬레이션 및 S-파라미터 측정을 진행하였다. 이러한 설계인자를 바탕으로 모든 신호 배선은 우수한 신호 전송을 얻기 위해서 $50{\Omega}$의 특성 임피던스를 가지는 coplanar waveguide(CPW) 및 microstrip 기반의 전송선 구조로 설계되었다. 본 논문에서는 패키지 기판 구조, 설계 방식, 제작 공정 및 측정 등을 포함하여 양극산화 알루미늄 패키지 기판의 특성과 성능을 분석하였다.

• 한국재료학회지
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• 제29권12호
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• pp.757-763
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• 2019

A stacked high-voltage (900 V) Al electrolytic capacitor made with ZrO₂ coated anode foils, which has not been studied so far, is realized and the effects of Zr-Al-O composite layer on the electric properties are discussed. Etched Al foils coated with ZrO₂ sol are anodized in 2-methyl-1,3-propanediol (MPD)-boric acid electrolyte. The anodized Al foils are assembled with stacked structure to prepare the capacitor. The capacitance and dissipation factor of the capacitor with ZrO₂ coated anode foils increase by 41 % and decrease by 50 %, respectively, in comparison with those of Al anode foils. Zr-Al-O composite dielectric layer is formed between separate crystalline ZrO₂ with high dielectric constant and amorphous Al₂O₃ with high ionic resistivity. This work suggests that the formation of a composite layer by coating valve metal oxide on etched Al foil surface and anodizing it in MPD-boric acid electrolyte is a promising approach for high voltage and volume efficiency of capacitors.

• Corrosion Science and Technology
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• 제15권3호
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• pp.120-124
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• 2016

The effect of alloying element Ca (0, 1, and 2 wt%) on corrosion resistance and bioactivity of the as-received and anodized surface of rolled plate AM60 alloys was investigated. A plasma electrolytic oxidation (PEO) was carried out to form anodic oxide film in $0.5mol\;dm^{-3}\;Na_3PO_4$ solution. The corrosion behavior was studied by polarization measurements while the in vitro bioactivity was tested by soaking the specimens in Simulated Body Fluid (1.5xSBF). Optical micrograph and elemental analysis of the substrate surfaces indicated that the number of intermetallic particles increased with Ca content in the alloys owing to the formation of a new phase $Al_2Ca$. The corrosion resistance of AM60 specimens improved only slightly by alloying with 2 wt% Ca which was attributed to the reticular distribution of $Al_2Ca$ phase existed in the alloy that might became barrier for corrosion propagation across grain boundaries. Corrosion resistance of the three alloys was significantly improved by coating the substrates with anodic oxide film formed by PEO. The film mainly composed of magnesium phosphate with thickness in the range $30-40{\mu}m$. The heat resistant phase of $Al_2Ca$ was believed to retard the plasma discharge during anodization and, hence, decreased the film thickness of Ca-containing alloys. The highest apatite forming ability in 1.5xSBF was observed for AM60-1Ca specimens (both substrate and anodized) that exhibited more degradation than the other two alloys as indicated by surface observation. The increase of surface roughness and the degree of supersaturation of 1.5xSBF due to dissolution of Mg ions from the substrate surface or the release of film compounds from the anodized surface are important factors to enhance deposition of Ca-P compound on the specimen surfaces.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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• pp.265.1-265.1
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• 2013

Nanoporous anodic aluminum oxide (AAO), a self-ordered hexagonal array has various applications for nanofabrication such as nanotemplate, and nanostructure. In order to obtain highly-ordered porous alumina membranes, Masuda et al. proposed a two-step anodization process however this process is confined to small domain size and long hours. Recently, alternative methods overcoming limitations of two-step process were used to make prepatterned Al surface. In this work, we confirmed that there is a specific tendency used a PDMS stamp to obtain a pre-patterned Al surface. Using the nanoindentaions of a PDMS stamp as chemical carrier for wet etching, we can easily get ordered nanoporous template without two-step process. This chemical etching method using a PDMS stamp is very simple, fast and inexpensive. We use two types of PDMS stamps that have different intervals (800nm, 1200nm) and change some parameters have influenced the patterning of being anodized, applied voltage, soaking and stamping time. Through these factors, we demonstrated the patterning effect of large scale PDMS stamp.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2003년도 제25회 학술발표회 초록집
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• pp.178-178
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• 2003

• 한국재료학회지
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• 제17권2호
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• pp.81-85
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• 2007

Embedded capacitor technology can improve electrical perfomance and reduce assembly cost compared with traditional discrete capacitor technology. To improve the capacitance density of the $Al_2O_3$ based embedded capacitor on Cu cladded fiber reinforced plastics (FR-4), the specific surface area of the $Al_2O_3$ thin films was enlarged and their surface morphologies were controlled by anodization process parameters. From I-V characteristics, it was found that breakdown voltage and leakage current were 23 V and $1{\times}10^{-6}A/cm^2$ at 3.3 V, respectively. We have also measured C-V characteristics of $Pt/Al_2O_3/Al/Ti$ structure on CU/FR4. The capacitance density was $300nF/cm^2$ and the dielectric loss was 0.04. This nano-porous $Al_2O_3$ is a good material candidate for the embedded capacitor application for electronic products.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 디스플레이 광소자 분야
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• pp.69-72
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• 2002

We establish a visible light emission from porous polycrystalline silicon nano structure(PPNS). The PPNS layer are formed on heavily doped n-type Si substrate. 2um thickness of undoped polycrystalline silicon deposited using LPCVD (Low Pressure Chemical Vapor Deposition) anodized in a HF: ethanol(=1:1) as functions of anodizing conditions. And then a PPNS layer thermally oxidized for 1 hr at $900^{\circ}C$. Subsequently, thin metal Au as a top electrode deposited onto the PPNS surface by E-beam evaporator and, in order to establish ohmic contact, an thermally evaporated Al was deposited on the back side of a Si-substrate. When the top electrode biased at +6V, the electron emission observed in a PPNS which caused by field-induces electron emission through the top metal. Among the PPNSs as functions of anodization conditions, the PPNS anodized at a current density of $10mA/cm^{2}$ for 20 sec has a lower turn-on voltage and a higher emission current. Furthermore, the behavior of electron emission is uniformly maintained.

• 대한전자공학회논문지
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• 제18권3호
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• pp.25-34
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• 1981

전하결합소자(charge coupled device)의 제작에 필요한 다중전극구조를 실현하기 위하여 알루미늄양극산화방법을 실험적으로 조사하였다. 양극산화의 전해질용액으로 2% ammonium tartrate를 사용하고, 산화전압을 30∼35 volt로 하여 2시간 정도 산화할 때 형성되는 Al2O3의 두께는 400∼500A이었고 절연파괴전압은 30volt 정도였다. 이와 같은 Al2O3의 성질을 이용하여 CCD transversal 저역여파기를 제작하였다. 17개의 tap coefficient를 갖는 저역파기의 stop band attenuation은 약 22dB 이었으며 사용가능한 주파수 범위는 3 KHz로부터 100KHz까지였다.

• 한국재료학회지
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• 제12권7호
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• pp.540-544
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• 2002

Hydration treatments were performed on the pure aluminum substrate at $100^{\circ}C$ followed by anodizing and heat treatments on the layers. The transformation behaviors of the oxide layers according to the hydration treatment were studied using TEM, XRD, RBS etc. Above $90^{\circ}C$ the hydrous oxide film could be formed, which were turned out to be hydrous oxides(AlOOH $nH_2$O). The anodization on the hydrous oxide film was more effective for the transition of amorphous anodic oxides to the crystalline $\Upsilon-Al_2$ $O_3$ comparing with the case for anodizing on the aluminum substrate without hydration treatment And additional heat treatments were also helpful for the acceleration of the transformation of the hydrous oxide to $\Upsilon-Al_2$ $O_3$. During the heat treatment the interface between $\Upsilon-Al_2$ $O_3$and the hydrous oxide layers migrated to the outer side of hydrous layer.