• International Journal of Advanced Culture Technology
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• v.12 no.1
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• pp.262-269
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• 2024

The "AR Campus Diary" project innovates in the realm of art through integrating augmented reality (AR) with interactive storytelling, fostering personal and interpersonal development through artistic expression. This artistic endeavor metaphorically represents the growth and fruition of individual stories, facilitated by a series of progressive art activities that emphasize continual interaction between self and others. Set against the backdrop of a university campus, the project employs AR markers designed to unfold stories in phases through a dedicated application, allowing participants to experience and influence the narrative uniquely. Diverging from traditional film editing techniques, "AR Diary" offers viewers the autonomy to navigate through story segments of their choosing, marking a departure from conventional cinematic storytelling by leveraging marker-based plot progression. This project not only showcases the fusion of technology and art but also pioneers a participatory form of art education based on engagement and play.

• Journal of Convergence for Information Technology
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• v.11 no.3
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• pp.236-249
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• 2021

Due to the spread of AR/VR headset, AR/VR contents market gains huge interests. However, various obstacles such as discomfort that restricts usability and absence of standard to evaluate usability block the growth of AR/VR contents industry. To overcome these problems, this study tries to develop an evaluation scheme for the usability of R/VR contents and a prototype system. The proposed evaluation system divides usability related items into safety and convenience items and performs evaluation by item through automatic and experience evaluation by system and experts/experience teams according to characteristics, and comprehensively evaluates the usability of AR/VR content. In this study, a detailed process fo usability evaluation and the prototype system are developed to verify the evaluation scheme. Developed scheme is expected to help the AR/VR content industry overcome the usability issues, and develop high-quality AR/VR content.

• Korean Chemical Engineering Research
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• v.59 no.3
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• pp.467-479
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• 2021

Abstract: A kinetic model was developed for the dehydration of ethanol to ethylene based on two parallel reaction pathways. Kinetic parameters were estimated by fitting experimental data of powder catalysts in a lab-scale test, and the effectiveness factor was determined using data from pellet-type catalysts in bench-scale experiments. The developed model was used to design a multitubular fixed-bed reactor (MTR) and an adiabatic reactor (AR) at a 10 ton per day scale. The two different reactor types resulted in different process configurations: the MTR consumed the ethanol completely and did not produce the reaction intermediate, diethyl ether (DEE), resulting in simple separation trains at the expense of high equipment cost for the reactor, whereas the AR required azeotropic distillation and cryogenic distillation to recycle the unreacted ethanol and to separate the undesired DEE, respectively. Quantitative analysis based on the equipment and annual energy costs showed that, despite high equipment cost of the reactor, the MTR process had the advantages of high productivity and simple separation trains, whereas the use of additional separation trains in the AR process increased both the total equipment cost and the annual energy cost per unit production rate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.7
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• pp.570-575
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• 2002

$SrBi_2Ta_2O_9$ thin films were etched in $Cl_2/CF_4/Ar$ inductively coupled plasma (ICP). The maximum etch rate was 1300 ${\AA}/min$ at 900 W ICP power in Cl$_2$(20%)/$CF_4$(20%)/Ar(60%). As RF source power increased, radicals (F, Cl) and ion ($Ar^+$) increased. The influence of plasma induced damage during etching process was investigated in terms of P-E hysteresis loops, chemical states on the surface, surface morphology and phase of X-ray diffraction. The chemical states on the etched surface were investigated with X-ray spectroscopy and secondary ion mass spectrometry. After annealing $700^{\circ}C$ for 1 h in $O_2$ atmosphere, the decreased P-E hysteresises of the etched SBT thin films in Ar and $Cl_2/CF_4/Ar$ plasma were recovered.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.2
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• pp.79-82
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• 2003

GaN nanoparticles were synthesized by the pulsed laser deposition (PLD) process on $SiO_2$substrate after irradiating the surface of the GaN sintered pellet by the ArF (193 nm) excimer laser. At this moment Ar gas pressure of 100 Pa, 50 Pa, 10 Pa and 1 Pa were applied during the ablation process and laser power of 100 mJ and 200 mJ were also applied. The synthesized fan nanoparticles were characterized by XRD, SEM, TEM, XPS and optical absorption spectra. The synthesized GaN nanoparticles had the crystallite sizes of 20~30 nm, and besides, GaN nanoparticles synthesized under low Ar gas pressure compared to the others corresponded with stoichiometry, and the optical band edge of the GaN nanoparticles was blueshifted.

• Korean Journal of Materials Research
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• v.13 no.10
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• pp.635-639
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• 2003

We investigated dry etching of GaAs and AiGaAs in a high density planar inductively coupled plasma system with BCl$_3$and BCl$_3$/Ar gas chemistry. A detailed etch process study of GaAs and ALGaAs was peformed as functions of ICP source power, RIE chuck power and mixing ratio of $BCl_3$ and Ar. Chamber process pressure was fixed at 7.5 mTorr in this study. The ICP source power and RIE chuck power were varied from 0 to 500 W and from 0 to 150 W, respectively. GaAs etch rate increased with the increase of ICP source power and RIE chuck power. It was also found that etch rates of GaAs in $15BCi_3$/5Ar plasmas were relatively high with applied RIE chuck power compared to pure 20 sccm $BCl_3$plasmas. The result was the same as AlGaAs. We expect that high ion-assisted effect in $BCl_3$/Ar plasma increased etch rates of both materials. The GaAs and AlGaAs features etched at 20 sccm $BCl_3$and $15BCl_3$/5Ar with 300 W ICP source power, 100 W RIE chuck power and 7.5 mTorr showed very smooth surfaces(RMS roughness < 2 nm) and excellent sidewall. XPS study on the surfaces of processed GaAs also proved extremely clean surfaces of the materials after dry etching.

• The Korean Journal of Applied Statistics
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• v.7 no.1
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• pp.103-112
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• 1994

An asymptotic property of the estimated eigenvalues for multivariate AR(p) process which consists of vector of nonstationary process and vector of stationary process is developed. All components of the nonstationary process are assumed to reveal random walk behavior. The asymptotic property is helpful in understanding multiple unit roots. In this paper we show the stationay part in multivariate AR(p) process does not affect the limiting distribution of estimated eigenvalues associated with the nonstationary process. A test statistic based on the ordinary least squares estimator for testing a certain number of multiple unit roots is suggested.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.26 no.4
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• pp.145-149
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• 2016

The effect of process parameters such as plasma composition, ICP (Inductively Coupled Plasma) source power and rf chuck power on the etch characteristics of GaN epitaxy layer was studied. $Cl_2/Ar$ ICP discharges showed higher etch rates than $SF_6/Ar$ discharges because of the higher volatility of $GaCl_x$ etch products than $GaF_x$ compounds. As the Ar ratio increases in the $Cl_2/Ar$ ICP discharges, the etch anisotropy was enhanced due to the improved physical component of the etching. For both plasma chemistries, the GaN etch rate increased continuously as both the ICP source power and rf chuck power increased, and a maximum etch rate of 251.9 nm/min was obtained at $13Cl_2/2Ar$, 750W ICP power, 400W rf chuck power and 10 mTorr condition.

• Applied Chemistry for Engineering
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• v.16 no.6
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• pp.853-856
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• 2005

Inductively coupled plasma reactive ion etching of magnetic tunnel junction (MTJ) stack, which is one of the key elements in magnetic random access memory, was studied. The MTJ stacks were patterned in nanometer size by electron(e)-beam lithography, and TiN thin films were employed as a hard mask. The etch process of TiN hard mask was examined using Ar, $Cl_2/Ar$, and $SF_6/Ar$. The TiN hard mask patterned by e-beam lithography was first etched and then the etching of MTJ stack was performed. The MTJ stacks were etched using Ar, $Cl_2/Ar$, and $BCl_3/Ar$ gases by varying gas concentration and pressure.

• The Journal of the Convergence on Culture Technology
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• v.9 no.4
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• pp.161-170
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• 2023

In this study, our primary focus was on preserving the unique characteristics inherent to the medium of printmaking art, such as cultural implications and formal features, during the digital transformation of traditional printmaking. We investigated methods to incorporate augmented reality (AR) technology into the creation process of traditional printmaking. To help understand the intended fusion of traditional printmaking art and AR technology in this digital transition era, we categorized AR artworks into four types and conducted an analysis of various AR artwork examples from across the globe. From this analysis, we derived the methodologies and design directions for combining AR technology with traditional printmaking. Moreover, we created an AR printmaking piece based on the author's artwork "Spring, Summer, Fall, Winter," thereby demonstrating the significant role AR technology can play in the evolution of printmaking. Through this research, we were able to verify the potential and value of AR printmaking as an immersive art form capable of providing a more expansive narrative.