Synthesis and characterization of GaN nanoparticles by pulsed laser deposition |
Koshizaki Naoto (Nanoarchitectonics Research Center, AIST) |
1 |
The effect of merallic catalysts on the synthesis of GaN micro-crystals
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DOI ScienceOn |
2 |
Current status of GaN crystal growth by sublimation sandwich technique
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DOI |
3 |
High treansconductance heterostructure field-effect transistors based on AlGaN/GaN
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DOI ScienceOn |
4 |
Investigation of physical properties of bulk galium nitride single crystals
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DOI ScienceOn |
5 |
Synthesis of photonic crystals for optica lwavelengrhts from semiconductor quantum dots
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DOI ScienceOn |
6 |
MOVPE : Is there any other technology for optoelectronics
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DOI |
7 |
Plasma-excited organometallic vapor phase epitaxy of GaN on (0 0 0 1)sapphire
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DOI |
8 |
Hogh-brighness InGaN blue, green and yellow lightemitting diodes with quantum well structures
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DOI ScienceOn |
9 |
Effects of crystallization of structural and dielectric properties of thin amorphous films of (1-X)<TEX>$BaTiO_{3-X}SrTiO_3$</TEX>(x=0-0.5, 1.0)
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DOI ScienceOn |
10 |
Growth of single crystal GaN subsrate using hydride vapor phase epitazy
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DOI ScienceOn |
11 |
Gallium nitride synthesis from sodium nitride axide using iodine as a heat sink and diluent
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DOI |
12 |
Ambient gas effects on iron oxide particle aggreated films prepared by laser ablation
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DOI ScienceOn |
13 |
Synthesis of nanocrystalline gallium nitridein silica aerogels
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DOI ScienceOn |
14 |
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15 |
Observation of quantum confinee escited states of GaN nanocrystals
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DOI ScienceOn |
16 |
Synthesis of gallium nitide quantum dots through reactive laser ablation
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DOI ScienceOn |