• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.24 no.4
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• pp.403-409
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• 2013

In this work, a CMOS two stage differential power amplifier which includes Marchand balun, transformer and injection-locked buffer is presented. The power amplifier is targeted for 70 GHz frequency band and fabricated using 65 nm technology. The measurement results show 8.5 dB maximum voltage gain at 71.3 GHz and 7.3 GHz 3 dB bandwidth. The measured maximum output power is 8.2 dBm, input $P_{1dB}$ is -2.8 dBm, output $P_{1dB}$ is 4.6 dBm and maximum power added efficiency is 4.9 %. The power amplifier consumes 102 mW DC power from 1.2 V supply voltage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.25 no.7
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• pp.791-794
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• 2014

In this work, a 300 GHz imaging detector has been developed and image has been acquired in a 65-nm CMOS technology. The circuit was designed based on the square-law of MOSFET devices. The fabricated detector exhibits a maximum responsivity of 2,270 V/W and minimum NEP of $38pW/Hz^{1/2}$ at 285 GHz, and NEP< ${\sim}200pW/Hz^{1/2}$ for 250~305 GHz range. The chip size is $400{\mu}m{\times}450{\mu}m$ including the probing pads and a balun, while the core of the circuit occupies only $150{\mu}m{\times}100{\mu}m$.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.11
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• pp.107-113
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• 2014

A VCO (Voltage Controlled Oscillator) and a divide-by-4 high speed frequency divider are implemented using 65nm CMOS technology for 60GHz wireless communication system. The mm-wave VCO was designed by NMOS cross-coupled LC type using current source. The architecture of the divide-by-4 high speed frequency divider is differential ILFD (Injection Locking Frequency Divider) with varactor to control frequency range. The frequency divider also uses current sources to get good phase noise characteristics. The measured results show that the VCO has 64.36~67.68GHz tuning range and the frequency divider divides the VCO output by 4 exactly. The high output power of 5.47~5.97dBm from the frequency divider is measured. The phase noise of the VCO including the frequency divider are -77.17dBc/Hz at 1MHz and -110.83dBc/Hz at 10MHz offset frequency. The power consumption including VCO is 38.4mW with 1.2V supply voltage.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.10
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• pp.941-944
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• 2016

This paper proposes 24 GHz power amplifier for automotive collision avoidance and surveillance short range radar using Samsung 65-nm CMOS process. The proposed circuit has a 2-stage differential power amplifier which includes common source structure and transformer for single to differential conversion, impedance matching, and power combining. The measurement results show 15.5 dB maximum voltage gain and 3.6 GHz 3 dB bandwidth. The measured maximum output power is 13.1 dBm, input $P1_{dB}$ is -4.72 dBm, output $P1_{dB}$ is 9.78 dBm, and maximum power efficiency is 17.7 %. The power amplifier consumes 74 mW DC power from 1.2 V supply voltage.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.24 no.4
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• pp.43-47
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• 2024

This paper introduces a phased-array single-channel transceiver beamformer IC built using 65nm CMOS technology, covering the 8-16 GHz range and targeting the X and Ku bands for radar and satellite communications. Each signal path in the IC features a low noise amplifier (LNA), power amplifier (PA), phase shifter (PS), and variable gain amplifier (VGA), which allow for phase and gain adjustments essential for beam steering and tapering control in typical beamforming systems. Test results show that the phase-compensated VGA offers a gain range of 15 dB with 0.25 dB increments and an RMS gain error of 0.27 dB. The active vector modulator phase shifter delivers a 360° phase range with 2.8125° steps and an RMS phase error of 3.5°.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.27 no.12
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• pp.792-796
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• 2014

In this paper, we investigated the hot carrier reliability of two kinds of device with low threshold voltage (LVT) and regular threshold voltage (RVT) in 65 nm CMOS technology. Contrary to the previous report that devices beyond $0.18{\mu}m$ CMOS technology is dominated by channel hot carrier(CHC) stress rather than drain avalanche hot carrier(DAHC) stress, both of LVT and RVT devices showed that their degradation is dominated by DAHC stress. It is also shown that in case of LVT devices, contribution of interface trap generation to the device degradation is greater under DAHC stress than CHC stress, while there is little difference for RVT devices.

• JSTS:Journal of Semiconductor Technology and Science
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• v.17 no.3
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• pp.370-377
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• 2017

This paper presents a simple noise margin (NM) model of MOS current mode logic (MCML) gates especially in CMOS processes where a large device mismatch deteriorates logic reliability. Trade-offs between speed and logic reliability are discussed, and a simple yet accurate NM equation to capture process-dependent degradation is proposed. The proposed NM equation is verified for 130-nm, 110-nm, 65-nm, and 40-nm CMOS processes and has errors less than 4% for all cases.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.4
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• pp.437-444
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• 2015

A high output power voltage controlled oscillator (VCO) in the U-band was implemented using a 65 nm CMOS process. The proposed VCO used a transmission line to increase output voltage swing and overcome the limitations of CMOS technologies. Two varactor banks were used for fine tuning with a 5% frequency tuning range. The proposed VCO showed small variation in output voltage and operated at 51.55-54.18 GHz. The measured phase noises were -51.53 dBc/Hz, -91.84 dBc/Hz, and -101.07 dBc/Hz at offset frequencies of 10 kHz, 1 MHz, and 10 MHz, respectively, with stable output power. The chip area, including the output buffer, is $0.16{\times}0.16mm^2$ and the maximum output power was -0.11 dBm. The power consumption was 33.4 mW with a supply voltage of 1.2-V. The measured $FOM_P$ was -190.8 dBc/Hz.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.5
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• pp.397-400
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• 2018

This paper presents a miniaturized 65 nm CMOS 30~46 GHz wideband amplifier. To minimize the chip area, coupled inductors are used in the matching networks. The measurement shows that the fabricated amplifier exhibits 9.3 dB of peak gain, 16 GHz of 3 dB bandwidth, and 42 % fractional bandwidth. The measured input and output return losses were more than 10 dB at 35.8~46.0 GHz and 28.6~37.8 GHz, respectively. The chip consumes 42 mW at 1.2 V. The measured group delay variation is 19.1 ps within the 3 dB bandwidth and the chip size excluding the pads is $0.09mm^2$.

• JSTS:Journal of Semiconductor Technology and Science
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• v.11 no.2
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• pp.95-103
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• 2011

This paper proposes a 6b 1.2 GS/s 47.8 mW 0.17 $mm^2$ 65 nm CMOS ADC for high-rate wireless personal area network systems. The proposed ADC employs a source follower-free flash architecture with a wide input range of 1.0 $V_{p-p}$ at a 1.2 V supply voltage to minimize power consumption and high comparator offset effects in a nanometer CMOS technology. The track-and-hold circuits without source followers, the differential difference amplifiers with active loads in pre-amps, and the output averaging layout scheme properly handle a wide-range input signal with low distortion. The interpolation scheme halves the required number of pre-amps while three-stage cascaded latches implement a skew-free GS/s operation. The two-step bubble correction logic removes a maximum of three consecutive bubble code errors. The prototype ADC in a 65 nm CMOS demonstrates a measured DNL and INL within 0.77 LSB and 0.98 LSB, respectively. The ADC shows a maximum SNDR of 33.2 dB and a maximum SFDR of 44.7 dB at 1.2 GS/s. The ADC with an active die area of 0.17 $mm^2$ consumes 47.8 mW at 1.2 V and 1.2 GS/s.