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http://dx.doi.org/10.5515/KJKIEES.2013.24.4.403

Design of a V Band Power Amplifier Using 65 nm CMOS Technology  

Lee, Sungah (College of Information and Communication Engineering, Sungkyunkwan University)
Cui, Chenglin (College of Information and Communication Engineering, Sungkyunkwan University)
Kim, Seong-Kyun (College of Information and Communication Engineering, Sungkyunkwan University)
Kim, Byung-Sung (College of Information and Communication Engineering, Sungkyunkwan University)
Publication Information
The Journal of Korean Institute of Electromagnetic Engineering and Science / v.24, no.4, 2013 , pp. 403-409 More about this Journal
Abstract
In this work, a CMOS two stage differential power amplifier which includes Marchand balun, transformer and injection-locked buffer is presented. The power amplifier is targeted for 70 GHz frequency band and fabricated using 65 nm technology. The measurement results show 8.5 dB maximum voltage gain at 71.3 GHz and 7.3 GHz 3 dB bandwidth. The measured maximum output power is 8.2 dBm, input $P_{1dB}$ is -2.8 dBm, output $P_{1dB}$ is 4.6 dBm and maximum power added efficiency is 4.9 %. The power amplifier consumes 102 mW DC power from 1.2 V supply voltage.
Keywords
Power Amplifier; CMOS; Millimeter-Wave; V Band; Marchand Balun; Transformer;
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1 T. Suzuki, Y. Kawano, M. Sato, T. Hirose, and K. Joshin, "60 and 77 GHz power amplifiers in standard 90 nm CMOS", in IEEE Int., Solid-Stae Circuits Conf. Tech. Dig., pp. 562-563, Feb. 2008.
2 Y. Hamada, M. Tanomura, M. Ito, and K. Maruhashi, "A high gain 77 GHz power amplifier operating at 0.7 V based on 90 nm CMOS technology", in IEEE Radio Freq. Integr. Circuits (RFIC) Symp. Dig., pp. 39-42, Jan. 2009.
3 J. -J. Kuo, W. -H. Lin, C. -C. Kuo, J. R. Tseng, Z. -M. Tsai, K- Y. Lin, and H. Wang, "A 71-76 GHz chip set for wireless communication in 65-nm CMOS technology", in IEEE MTT-S Int. Microw. Symp. Dig., pp. 189-192, Jun. 2009.
4 Y. Li, M. Hung, S. Huang, and J. Lee, "A fully integrated 77 GHz FMCW radar system in 65 nm CMOS", in IEEE Int., Solid-Stae Circuits Conf. Tech. Dig., pp. 216-217, Feb. 2010.
5 S. Aloui, E. Kerherve, R. Plana, and D. Belot, "RFpad, transmission lines and balun optimization for 60 GHz 65 nm CMOS power amplifier", in IEEE Radio Freq. Integr. Circuits (RFIC) Symp. Dig., pp. 211-214, May 2010.
6 J. X. Liu, C. -Y. Hsu, H. - R. Chuang, and C. -Y. Chen, "A 60-GHz Millimeter-wave CMOS machand balun", in IEEE Radio Freq. Integr. Circuits (RFIC) Symp. Dig., pp. 445-448, Jun. 2007.
7 B. Heydari, M. Bohsali, E. Adabi, and A. M. Niknejad, "A 60 GHz power amplifier in 90 nm CMOS technology", in Proc. IEEE CICC, pp. 769-772, Sep. 2007.
8 W. L. Chan, J. R. Long, M. Spirito, and J. J. Pekarik, "A 60 GHz-band 1 V 11.5 dBm power amplifier with 11 % PAE in 65 nm CMOS", in IEEE Int., Solid-Stae Circuits Conf. Tech. Dig., pp. 380-381, 381a, Feb. 2009.
9 S. C. Cripps, RF Power Amplifiers for Wireless Communications, Artech House, pp. 20-36, 1999.
10 G. Gonzalez, Microwave Transistor Amplifiers Analysis and Design, Prentice Hall, pp. 217-228, 1997.