• Vacuum Magazine
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• v.3 no.1
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• pp.22-31
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• 2016

Although graphene has been considered as one of the promise materials for future logic devices due to extremely high mobility, its applications in electronics have been limited to a few cases such as a flexible interconnect, and RF devices. Furthermore, most of the studies on graphene devices reported unstable operations, claimed to be due to the poor quality of graphene. Nevertheless, recent studies showed that the electrical performance of graphene field effect transistor could be stabilized even with CVD graphene when well-established integration processes to control the interface of graphene were used. These results indicate that as in the case of silicon devices, a proper control of graphene interface is very important for the stable operation of graphene device as well as other 2D material based devices.

• Korean Chemical Engineering Research
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• v.61 no.4
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• pp.627-634
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• 2023

Graphitic carbon nitride (g-C₃N₄) has attracted considerable attention since its discovery for its catalysis of water splitting to hydrogen and oxygen under visible light irradiation. However, pristine g-C₃N₄ confers only low photocatalytic efficiency and requires surface cocatalysts to reach moderate activity due to a lack of accessible surface active sites. Inspired by the high specific surface area and superior electron transfer of graphene, we developed a strongly coupled binary structure of graphene and g-C₃N₄ aerogel with 3D porous skeleton. The as-prepared 3D structure photocatalysts achieve a high surface area that favors efficient photogenerated charge separation and transfer, enhances the light-harvesting efficiency, and significantly improves the photocatalytic hydrogen evolution rate as well. The photocatalyst performance is observed to be optimized at the ratio 3:7 (g-C₃N₄:GO), leading to photocatalytic H₂ evolution of 16125.1 mmol. g^-1. h^-1 under visible light irradiation, more than 161 times higher than the rate achieved by bulk g-C₃N₄.

• Korean Journal of Materials Research
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• v.29 no.5
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• pp.304-310
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• 2019

Chemical vapor deposition method using $CH_4$ gaseous hydrocarbons is generally used to synthesize large-area graphene. Studies using non-gaseous materials such as ethanol, hexane and camphor have occasionally been conducted. In this study, large-area graphene is synthesized via chemical vapor deposition using polyethylene as a carbon precursor. In particular, we used a poly glove, which is made of low-density polyethylene. The characteristics of the synthesized graphene as functions of the growth time of graphene and the temperature for vaporizing polyethylene are evaluated by optical microscopy and Raman spectroscopy. When the polyethylene vaporizing temperature is over $150^{\circ}C$, large-area graphene with excellent quality is synthesized. Raman spectroscopy shows that the D peak intensity increased and the 2D peak intensity decreased with increasing growth time. The reason for this is that sp3 bonds in the graphene can form when the correct amount of carbon source is supplied. The quality of the graphene synthesized using polyethylene is similar to that of graphene synthesized using methane gas.

• Korean Chemical Engineering Research
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• v.51 no.3
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• pp.388-393
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• 2013

The study was focused to evaluate the possibility for combination membrane of bacterial cellulose (BC) and graphene with high electrical properties. BC with natural polymer matrix was known to have strong physical strength. For the combination of graphene with BC, the surface of graphene was modified with oxygen plasma by changing strength and time of radio waves in room temperature. Water contact angle of modified graphene grew smaller from $130^{\circ}$ to $12^{\circ}$. XPS analysis showed that oxygen content after treatment increased from 2.99 to 10.98%. Damage degree of graphene was examined from $I_D/I_G$ ratio of Raman analysis. $I_D/I_G$ ratio of non-treated graphene (NTG) was 0.11, and 0.36 to 0.43 in plasma treated graphene (PTG), increasing structural defects of PTG. XRD analysis of PTG membrane with BC was $2{\theta}$ same to BC only, indicating chemically combined membrane. In FT-IR analysis, 1,000 to 1,300 $cm^{-1}$ (C=O) peak indicating oxygen radicals in PTG membrane had formed was larger than NTG membrane. The results suggest that BC as an alternation of plastic material for graphene combination has a possibility in some degree on the part like transparent conductive films.

• Journal of Powder Materials
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• v.30 no.4
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• pp.318-323
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• 2023

The thermoelectric effect, which converts waste heat into electricity, holds promise as a renewable energy technology. Recently, bismuth telluride (Bi2Te3)-based alloys are being recognized as important materials for practical applications in the temperature range from room temperature to 500 K. However, conventional sintering processes impose limitations on shape-changeable and tailorable Bi₂Te₃ materials. To overcome these issues, three-dimensional (3D) printing (additive manufacturing) is being adopted. Although some research results have been reported, relatively few studies on 3D printed thermoelectric materials are being carried out. In this study, we utilize extrusion 3D printing to manufacture n-type Bi_1.7Sb_0.3Te₃ (N-BST). The ink is produced without using organic binders, which could negatively influence its thermoelectric properties. Furthermore, we introduce graphene oxide (GO) at the crystal interface to enhance the electrical properties. The formed N-BST composites exhibit significantly improved electrical conductivity and a higher Seebeck coefficient as the GO content increases. Therefore, we propose that the combination of the extrusion 3D printing process (Direct Ink Writing, DIW) and the incorporation of GO into N-BST offers a convenient and effective approach for achieving higher thermoelectric efficiency.

• Journal of the Korean Ceramic Society
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• v.54 no.3
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• pp.257-260
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• 2017

In this work, we present a facile one-pot synthesis of a multilayer-structured platy alumina/few-layer graphene nanocomposite by planetary milling and hot pressing. The sintered composites have electrical conductivity exhibiting percolation behavior (threshold ~ 0.75 vol.%), which is much lower than graphene oxide/ceramic composites (> 3.0 vol.%). The conductivity data are well-described by the percolation theory, and the fitted exponent values are estimated to be 1.65 and 0.93 for t and q, respectively. The t and q values show conduction mechanisms intermediate between 2D- and 3D, which originates from quantum tunneling between nearest neighbored graphenes.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.291.1-291.1
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• 2016

Graphene by one of the two-dimensional (2D) materials has been focused on electronic applications due to its ultrahigh carrier mobility, outstanding thermal conductivity and superior optical properties. Although graphene has many remarkable properties, graphene devices have low on/off current ratio due to its zero bandgap. Despite considerable efforts to open its bandgap, it's hard to obtain appropriate improvements. To solve this problem, heterojunction barristor was proposed based on graphene. Mostly, this heterojunction barristor is made by transition metal dichalcogenides (TMDs), such as molybdenum disulfide ($MoS_2$) and tungsten diselenide ($WSe_2$), which have extremely thickness scalability of TMDs. The heterojunction barristor has the advantage of controlling graphene's Fermi level by applying gate bias, resulting in barrier height modulation between graphene interface and semiconductor. However, charged impurities between graphene and $SiO_2$ cause unexpected p-type doping of graphene. The graphene's Fermi level modulation is expected to be reduced due to this p-doping effect. Charged impurities make carrier mobility in graphene reduced and modulation of graphene's Fermi level limited. In this paper, we investigated theoretically and experimentally a relevance between graphene's Fermi level and p-type doping. Theoretically, when Fermi level is placed at the Dirac point, larger graphene's Fermi level modulation was calculated between -20 V and +20 V of $V_{GS}$. On the contrary, graphene's Fermi level modulation was 0.11 eV when Fermi level is far away from the Dirac point in the same range. Then, we produced two types heterojunction barristors which made by p-type doped graphene and graphene treated 2.4% APTES, respectively. On/off current ratio (32-fold) of graphene treated 2.4% APTES was improved in comparison with p-type doped graphene.

• Journal of Convergence for Information Technology
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• v.8 no.5
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• pp.95-100
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• 2018

The metal oxide/graphene nanocomposites are promising functional materials for high capacitive electrode material of secondary batteries, and high sensitive material of high performance gas sensors. In this study, vanadium dioxide($VO_2$) nanostructrures were grown on CVD graphene which was synthesized on Cu foil by thermal CVD, and exfoliated graphene which was exfoliated from highly oriented pyrolytic graphite(HOPG) using a vapor transport method. As results, $VO_2$ nanostructures on CVD graphene were grown preferential growth on abundant functional groups of graphene grain boundaries. The functional groups are served to nucleation site of $VO_2$ nanostructures. On the other hand, 2D & 3D $VO_2$ nanostructures were grown on exfoliated graphene due to uniformly distributed functional groups on exfoliated graphene surface. The characteristics of morphology controlled growth of $VO_2$/graphene nanocomposites would be applied to fabrication process for high capacitive electrode materials of secondary batteries, and high sensitive materials of gas sensors.

• Journal of the Microelectronics and Packaging Society
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• v.30 no.3
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• pp.64-72
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• 2023

In this study, after transferring graphene on a Cu substrate and printing a Sn-3.0Ag-0.5Cu Pb-free solder paste on the Cu substrate, effects of the transferred graphene on formations and growths of intermetallic compound (IMC) at the interface between the Cu substrate and the solder were reported during processes of reflow soldering and isothermal aging for 1000 h with various temperatures (125, 150, and 175 ℃). Thicknesses of Cu₆Sn₅ and Cu₃Sn IMCs at the interfaces with graphene were decreased during the reflow soldering and isothermal aging processes compared to those without graphene. The transferred graphene layers also showed that the growth rate constant and square of growth rate constant which related to the growth mechanisms of Cu₆Sn₅ and Cu₃Sn IMCs with t he t emperature a nd t ime of t he i sothermal aging c ould dramatically decreased.

• Steel and Composite Structures
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• v.43 no.1
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• pp.91-106
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• 2022

This paper has focused on presenting a three dimensional theory of elasticity for free vibration of 3D-graphene foam reinforced polymer matrix composites (GrF-PMC) cylindrical panels resting on two-parameter elastic foundations. The elastic foundation is considered as a Pasternak model with adding a Shear layer to the Winkler model. The porous graphene foams possessing 3D scaffold structures have been introduced into polymers for enhancing the overall stiffness of the composite structure. Also, 3D graphene foams can distribute uniformly or non-uniformly in the shell thickness direction. The effective Young's modulus, mass density and Poisson's ratio are predicted by the rule of mixture. Three complicated equations of motion for the panel under consideration are semi-analytically solved by using 2-D differential quadrature method. The fast rate of convergence and accuracy of the method are investigated through the different solved examples. Because of using two-dimensional generalized differential quadrature method, the present approach makes possible vibration analysis of cylindrical panels with two opposite axial edges simply supported and arbitrary boundary at the curved edges. It is explicated that 3D-GrF skeleton type and weight fraction can significantly affect the vibrational characteristics of GrF-PMC panel resting on two-parameter elastic foundations.