• Journal of Sensor Science and Technology
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• v.28 no.2
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• pp.121-126
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• 2019

The voltage-controlled oscillator is one of the fundamental building blocks that determine the signal quality and power consumption in RF transceivers for wireless sensor networks. Ring oscillators are attractive owing to their small form factor and multi-phase capability despite the relatively poor phase noise performance in comparison with LC oscillators. The phase noise of a ring oscillator can be improved by using a coupled structure that works at a lower frequency. This paper introduces a 2.4 GHz low-noise ring oscillator that consists of two 3-stage coupled ring oscillators. Each sub-oscillator operates at 800 MHz, and the multi-phase signals are combined to generate a 2.4 GHz quadrature output. The voltage-controlled ring oscillator designed in a 65-nm standard CMOS technology has a tuning range of 800 MHz and exhibits the phase noise of -104 dBc/Hz at 1 MHz offset. The power consumption is 13.3 mW from a 1.2 V supply voltage.

• Journal of information and communication convergence engineering
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• v.3 no.4
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• pp.184-186
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• 2005

The effect of power supply noise on the phase noise of a ring oscillator is studied. The power supply noise source in series with DC power supply voltage is applied to a 3 stage CMOS ring oscillator. The phase noise due to the power supply noise is modeled by the narrow band phase modulation. The model is verified by the fact that the spectrum of output of ring oscillator has two side bands at the frequencies offset from the frequency of the ring oscillator by the frequency of the power supply noise source. Simulations at several different frequency of the power supply noise reveals that the ring oscillator acts as a low pass filter to the power supply noise. This study, as a result, shows that the phase noise generated by the power supply noise is inversely proportional to the frequency offset from the carrier frequency.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.27 no.2
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• pp.212-215
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• 2016

In this paper, a 5.08 GHz Ring Voltage Controlled Oscillator(Ring VCO) was implemented using $0.18{\mu}m$ standard CMOS technology. The proposal Ring VCO is 3-stage structure. This research confirmed that the each stage's different transistor size ratio influence the current change and alter power consumption consequentially. This circuit is formed to control the current thereby adding the Current Mirror and to tune the frequency by supplying control voltage. It has an 65.5 %(1.88~5.45 GHz) tuning range. The measured output power is -0.30 dBm. The phase noise is -87.50 dBc/Hz @1 MHz offset with operating frequency of 5.08 GHz fundamental frequency. The total power consumption of Ring VCO is 31.2 mW with 2.4 V supply voltage.

• IEIE Transactions on Smart Processing and Computing
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• v.4 no.3
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• pp.149-151
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• 2015

Coupling with a ring of capacitors introduces in-phase coupling current in multi-stage LC oscillators, increasing coupling strength and phase spacing accuracy. Capacitive coupling is effective at high-frequency applications because it increases coupling strength with the operating frequency. However, capacitive loading from the ring lowers operating frequency and reduces the tuning range. Mathematical expressions of phase noise and phase spacing accuracy with capacitive coupling are examined here, and transistor-level simulations confirm the effectiveness of the capacitive coupling.

• Journal of the Institute of Electronics and Information Engineers
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• v.51 no.7
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• pp.71-81
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• 2014

In this paper, the performance variations of tri-gate FinFET are analyzed for different fin shapes and source/drain epitaxy types using a 3D device simulator(Sentaurus). If the fin shape changes from a rectangular shape to a triangular shape, the threshold voltage increases due to a non-uniform potential distribution, the off-current decreases by 72.23%, and the gate capacitance decreases by 16.01%. In order to analyze the device performance change from the structural change of the source/drain epitaxy, we compared the grown on the fin (grown-on-fin) structure and grown after the fin etch (etched-fin) structure. 3-stage ring oscillator was simulated using Sentaurus mixed-mode, and the energy-delay products are derived for the different fin and source/drain shapes. The FinFET device with triangular-shaped fin with etched-fin source/drain type shows the minimum the ring oscillator delay and energy-delay product.

• Journal of Information Display
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• v.12 no.1
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• pp.1-4
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• 2011

A complementary inverter was fabricated using pentacene and N-N -dioctyl-3,4,9,10-perylene tetracarboxylic diimide-C (PTCDI-C8) for p- and n-type transistors on a poly(ether sulfone) substrate, respectively. The mobilities of the p- and n-type transistors were 0.056 and 0.013 $cm^2$/Vs, respectively. The inverter, which was composed of p- and n-type transistors, showed a gain of 48.6 when $V_{DD}$ = -40V and at the maximum noise margin of $V_{DD}$/2. A ring oscillator was also fabricated by cascading five inverters. The five-stage ring oscillator showed the maximum output frequency of 10 kHz when $V_{DD}$ = -170 V.

• Journal of Multimedia Information System
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• v.5 no.2
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• pp.139-142
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• 2018

This work presents a novel architecture of phase locked loop (PLL) with the current compensating scheme to improve phase noise characteristic. The proposed PLL has two charge pumps (CP), main-CP (MCP) and sub-CP (SCP). The smaller SCP current with same time duration but opposite direction of UP/DN MCP current is injected to the loop filter (LF). It suppresses the voltage fluctuation of LF. The PLL has a novel voltage controlled oscillator (VCO) consisting of a voltage controlled resistor (VCR) and the three-stage ring oscillator with latch type delay cells. The VCR linearly converts voltage into current, and the latch type delay cell has short active on-time of transistors. As a result, it improves phase noise characteristic. The proposed PLL has been fabricated with $0.35{\mu}m$ 3.3 V CMOS process. Measured phase noise at 1 MHz offset is -103 dBc/Hz resulting in 3 dBc/Hz phase noise improvement compared to the conventional PLL.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.353-356
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• 1999

A 3.3V PLL(Phase Locked loop) is designed for a high frequency, low voltage, and low power applications. This paper proposes a new PLL architecture to improve voltage to frequency linearity of VCO(Voltage controlled oscillator) with new delay cell. The proposed VCO operates at a wide frequency range of 30MHz~1㎓ with a good linearity. The DC-DC voltage up/down converter is utilized to regulate the control voltage of the two-stage VCO. The designed PLL architecture is implemented on a 0.6${\mu}{\textrm}{m}$ n-well CMOS process. The simulation results show a locking time of 2.6$\mu$sec at 1Hz, Lock in range of 100MHz~1㎓, and a power dissipation of 112㎽.

• Journal of the Institute of Electronics Engineers of Korea SC
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• v.47 no.2
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• pp.25-34
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• 2010

This paper proposed a high-speed voltage-controlled ring-oscillator(VCRO) using a frequency doubling technique. The design of the proposed oscillator has been based on TSMC 0.18um 1.8V CMOS technology. The frequency doubling technique is achieved by AND-OR operations with 4 signals which have $90^{\circ}$ phase difference one another in one cycle. The proposed technique has been implemented using a 4-stage differential oscillator compose of differential latched inverters and NAND gates for AND and OR operations. The differential ring-oscillator can generate 4 output signals, which are $90^{\circ}$ out-of-phase one another, with low phase noise. The ANP-OR operations needed in the proposed technique are implemented using NAND gates, which is more area-efficient and provides faster switching speed than using NOR gates. Simulation results show that the proposed, VCRO operates in the frequency range of 3.72 GHz to 8 GHz with power consumption of 4.7mW at 4GHz and phase noise of ~-86.79dBc/Hz at 1MHz offset. Therefore, the proposed oscillator demonstrates superior performance compared with previous high-speed voltage-controlled ring-oscillators and can be used to build high-performance frequency synthesizers and phase-locked loops for radio-frequency applications.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.439-440
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• 2008

A high-speed DCO is proposed that uses the negative-skewed delay scheme. The DCO consists of a ring of inverters with each PMOS transistor driven from the output of 3 earlier stage through a set of minimum-sized pass-transistors. The digitization of negative-skewed delay is achieved by selecting pass-transistors turned on and digitizing the gate voltages of the selected pass-transistors. The proposed 7-stage DCO has been simulated using 1.8V, $0.18\;{\mu}m$ TSMC CMOS process to obtain a resolution of 3ps and an operation range of 2.88-5.03GHz.