• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.2
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• pp.117-123
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• 2004

A 30 nm $In_{0.7}GaAs$ High Electron Mobility Transistor (HEMT) with triple-gate has been successfully fabricated using the $SiO_2/SiN_x$ sidewall process and BCB planarization. The sidewall gate process was used to obtain finer lines, and the width of the initial line could be lessened to half by this process. To fill the Schottky metal effectively to a narrow gate line after applying the developed sidewall process, the sputtered tungsten (W) metal was utilized instead of conventional e-beam evaporated metal. To reduce the parasitic capacitance through dielectric layers and the gate metal resistance ($R_g$), the etchedback BCB with a low dielectric constant was used as the supporting layer of a wide gate head, which also offered extremely low Rg of 1.7 Ohm for a total gate width ($W_g$) of 2x100m. The fabricated 30nm $In_{0.7}GaAs$ HEMTs showed $V_{th}$of -0.4V, $G_{m,max}$ of 1.7S/mm, and $f_T$ of 421GHz. These results indicate that InGaAs nano-HEMT with excellent device performance could be successfully fabricated through a reproducible and damage-free sidewall process without the aid of state-of-the-art lithography equipment. We also believe that the developed process will be directly applicable to the fabrication of deep sub-50nm InGaAs HEMTs if the initial line length can be reduced to below 50nm order.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.3
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• pp.404-416
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• 2015

Small-area, low-power coarse and fine frequency detectors (FDs) are proposed for an adaptive bandwidth referenceless CDR with a wide range of input data rate. The coarse FD implemented with two flip-flops eliminates harmonic locking as long as the initial frequency of the CDR is lower than the target frequency. The fine FD samples the incoming input data by using half-rate four phase clocks, while the conventional rotational FD samples the full-rate clock signal by the incoming input data. The fine FD uses only a half number of flip-flops compared to the rotational FD by sharing the sampling and retiming circuitry with PLL. The proposed CDR chip in a 65-nm CMOS process satisfies the jitter tolerance specifications of both USB 3.0 and USB 3.1. The proposed CDR works in the range of input data rate; 2 Gb/s ~ 8 Gb/s at 1.2 V, 4 Gb/s ~ 11 Gb/s at 1.5 V. It consumes 26 mW at 5 Gb/s and 1.2 V, and 41 mW at 10 Gb/s and 1.5 V. The measured phase noise was -97.76 dBc/Hz at the 1 MHz frequency offset from the center frequency of 2.5 GHz. The measured rms jitter was 5.0 ps at 5 Gb/s and 4.5 ps at 10 Gb/s.

• Journal of the Earthquake Engineering Society of Korea
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• v.6 no.4
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• pp.23-29
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• 2002

Radar method can be effective in probing concrete structures damaged by earthquake. Data analysis is usually performed in time domain, by considering time delay of the wave due to the dielectric constant of concrete. In this study, improved data analysis has been performed using signal processing scheme of spectra analysis and filtering. Three antenna with 900MHz, 1㎓, and 1.5㎓ center frequency were used to detect a steel bar or delamination in specimens for obtaining data, Frequency spectrum was filtered in low pass, high pass, and band pass varying cutoff frequency with 1/3 octave in frequency domain. The most effective cutoff frequency for each frequency has been determined as the range for 2 octave lower to 1 octave higher and 2 octave lower to 1 octave lower. This result provided a basis in improving data analysis capability using frequency domain filtering.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.42 no.3 s.333
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• pp.25-34
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• 2005

In this paper, we analyzed and measured the electrical crosstalk characteristics of a triplex transceiver module for ethernet Passive optical networks(EPONS). And we improved the electrical crosstalk levels using Dummy ground lines with signal lines. The triplex transceiver module consists of a laser diode as a transmitter, a digital photodetector as a digital data receiver, and a analog photodetector as a community antenna television signal receiver. And there are integrated on silicon substrate. The digital receiver and analog receiver sensitivity have to meet -24 dBm at $BER=10^{-l2}$ and -7.7 dBm at 44 dB SNR. And the electrical crosstalk levels have to maintain less than -86 dB from DC to 3 GHz. From analysis and measurement results, the proposed silicon substrate structure that contains the Dummy ground line with $100\;{\mu}m$ space from signal lines and separates 4 mm among devices respectively, is satisfied the electrical crosstalk level compared to simple structure. This proposed structure can be easily implemented with design convenience and greatly reduced the silicon substrate size about $50\%$.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.9
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• pp.987-994
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• 2010

In this paper, a simple and effective active load-pull method is proposed, and the method to improve the efficiency of X-band power amplifier using harmonic control circuit is presented. The proposed active load-pull system mainly consists of directional coupler, phase shifter, short circuit, and power amplifier, and allows a user to access reflection coefficients near the edge of the Smith chart($\Gamma$=1) easily. The device used in this paper is Mitsubishi's GaAs FET MGF1801, and the operating frequency of the power amplifier is 9 GHz, The amplifier had output power of 21.65 dBm and drain efficiency of 24.9 % at class-A, and had output power of 21.46 dBm and drain efficiency of 53.3 % at class-AB. Harmonic control circuit is designed only second and third harmonic components because of the bandwidth limitation of the microwave components. The drain efficiency is improved as much as 6.4 % compared with class-AB power amplifier.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.49 no.6
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• pp.25-34
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• 2012

New calibration method for the near-field scanning (NFS) system is presented. The proposed calibration method consisted of a new near-field antenna (NFP) and newly devised patterns as circular patch patterns (CPPs) and meander patterns (MPs). The proposed patterns were used for improving spatial resolutions and simplifying a calibration procedure of the NFP compared to the conventional method defined in the IEC61967-3 and 6. Also, the effect of the length of NFPs on attenuation characteristics was investigated with length of 8mm and 30mm. For them, we designed and fabricated CPPs of diameter (D) = 20, 40, 60, and 100mm and MPs of various widths and spaces. We found the reverse relations between spatial resolutions and heights of measuring points by using simplified calibration procedure. The testing result shows that the spatial resolution of $120{\mu}m$ at height of $200{\mu}m$ was verified without complex correlation algorithms under 8GHz. For manufacturing cost all patterns and the NFP were realized with low-cost fabrication using PCB (FR-4) not by a conventional LTCC process. For verification of chip-level EMC from the results, near-field scanning system (NFSS) having step resolution of Sub-micron scale was produced and by using the proposed NFSS and proposed NFP measurement of chip shows accurately the shape of the resolution of $200{\mu}m$ patterns for securing a high level of chip-level EMC verification.

• Journal of The Korean Astronomical Society
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• v.38 no.4
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• pp.437-443
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• 2005

The Solar Radio Burst Locator (SRBL) is a spectrometer that can observe solar microwave bursts over a wide band (0.1-18 GHz) as well as detect the burst locations without interferometry or mechanical scanning. Its prototype has been operated at Owens Valley Radio Observatory (OVRO) since 1998. In this study, we have evaluated the capability of the SRBL system in flux and radio burst location measurements. For this, we consider 130 microwave bursts from 2000 to 2002. The SRBL radio fluxes of 53 events were compared with the fluxes from USAF/RSTN and the burst locations of 25 events were compared with the optical flare locations. From this study, we found: (1) there is a relatively good correlation (r = 0.9) between SRBL flux and RSTN flux; (2) the mean location error is about 8.4 arcmin and the location error (4.7 arcmin) of single source events is much smaller than that (14.9 arcmin) of multiple source events; (3) the minimum location error usually occurred just after the starting time of burst, mostly within 10 seconds; (4) there is a possible anti-correlation (r = -0.4) between the pointing error of SRBL antenna and the location error. The anti-correlation becomes more evident (r=-0.9) for 6 strong single source events associated with X-class flares. Our results show that the flux measurement of SRBL is consistent with that of RSTN, and the mean location error of SRBL is estimated to be about 5 arcmin for single source events.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.245-245
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• 2007

본 연구는 $Bi_2O_3$, ZnO 및 $Nb_2O_5$로 이루어진 두 가지의 $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$와 $(Bi_{1.5}Zn_{0.5})(Zn_{0.5}Nb_{1.5})O_7$ pyrochlore를 제조한 후, ZBS 및 BZBS 유리를 각각 첨가하여 저온 소결 및 마이크로파 유전 특성을 고찰하였다. 두 가지의 pyrochlore에 대하여 하소 온도에 따른 상 합성 유무를 고찰한 결과 $900^{\circ}C$에서 단일 상을 갖는 pyrochlore를 제조할 수 있었다. 두 가지의 pyrochlore에 ZnO-rich ZBS 유리와 $Bi_2O_3$-rich BZBS 유리를 3, 5 wt%로 첨가한 후 $800{\sim}950^{\circ}C$에서 소결한 결과 ZBS 및 BZBS 유리를 5wt%를 첨가하였을 때 $900^{\circ}C$에서 소결이 가능하였다. 또한 마이크로파 유전 특성을 고찰한 결과, $(Bi_{1.5}Zn_{0.5})(Zn_{0.5}Nb_{1.5})O_7$의 pyrochlore는 고주파에서 유전 특성 측정이 되지 않았다. $Bi_2(Zn_{1/3}Nb_{2/3})_2O_7$의 pyrochlore의 경우 5 wt% ZBS 및 BZBS 유리를 첨가하여 $900^{\circ}C$에서 소결한 시편의 마이크로파 유전 특성은 ${\varepsilon}_r$= 62.8~68.3, $Q{\times}f$ value= 3,500~2,700 GHz을 나타내었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.11
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• pp.947-953
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• 1998

The microwave dielectric properties of X BaO-0.15($Nd_{0.87}Bi_{0.13})_2O_3-(0.85-X)TiO_2 (X=0.14~0.17) and 0.16BaO-0.15(Bi_xNd_{1-x})_2O_3-0.69TiO_2$ (X=0.12~0.15) ceramics sintered at 1320~$1380^{\circ}C$ were investigated. The microwave dielectric properties of X BaO-0.15(Nd_{0.87}Bi_{0.13})_2O_3-(0.85-X)TiO_2$ (X=0.14~0.17) can be controlled effectively by adjusting X content : with increasing X from 0.14 to 0.17 both dielectric constant and temperature coefficient of resonant frequency decreased from 94.6 to 86 and from 22 ppm/^${\circ}C to -7 ppm/^{\circ}C$, respectively, while quality factor increased from 1300 to 1920 (at 4GHz). The microwave dielectric properties of 0.16BaO-0.15(Bi_x/Nd_{1-x2}O_3 -0.69TiO_2$ (X=0.12~0.15) can be controlled effectively by adjusting X content : with increasing X from 0.12 to 0.15 both quality factor and temperature coefficient of resonant frequency decreased from 1920 to 1430 and from 9 ppm/^${\circ}C to -10 ppm/^{\circ}C$, respectively, while dielectric constant increased from 87.5 to 92.6.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.131-134
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• 2002

The effect of the addition on the densification, low temperature sintering, and microwave dielectric properties of the Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$/(CLNT) was investigated. $Bi_2O_3$ additives improved the dencification and reduced the sintering temperature from $1150^{\circ}C$ to $900^{\circ}C$ of CLNT microwave dielectric ceramics. As increasing $Bi_2O_3$ contents, the dielectric constants and bulk density were increased. The quality factor, however, was decreased slighty. The temperature coefficients of the resonant frequency shifted positive value as increasing $Bi_2O_3$ contents. The dielectric properties of Ca[($Li_{1/3}Nb_{2/3}$)$_{1-x}$$Ti_{x}$]$O_{3-{\delta}}$ and Ca[($Li_{1/3}Nb_{2/3}$)$_{0.8}Ti_{0.2}$]$O_{3-{\delta}}$ with 5wt% $Bi_2O_3$ sintered at $900^{\circ}C$ for 3h were $\varepsilon_{r}$=20, 35 Q.$f_{0}$=6500, 11,000 GHz, $\tau_{f}$=4, 13 ppm/$^{\circ}C$, respectively.