• Journal of the Institute of Electronics Engineers of Korea CI
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• v.41 no.3
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• pp.103-114
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• 2004

This paper deals with a system that is capable of recognizing hand-signals in 3-dimensional space. The system uses 2 color cameras as input devices. Vision-based gesture recognition system is known to be user-friendly because of its contact-free characteristic. But as with other applications using a camera as an input device, there are difficulties under complex background and varying illumination. In order to detect hand region robustly from a input image under various conditions without any special gloves or markers, the paper uses previous position information and adaptive hand color model. The paper defines a hand-signal as a combination of two basic elements such as 'hand pose' and 'hand trajectory'. As an extensive classification method for hand pose, the paper proposes 2-stage classification method by using 'small group concept'. Also, the paper suggests a complementary feature selection method from images from two color cameras. We verified our method with a hand-signal application to our driving simulator.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.5
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• pp.1-5
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• 2011

In this paper, we optimize the gate field plate structure to improve breakdown characteristics of AlGaN/GaN HEMT by two-dimensional device simulator. We have simulated using three parameters such as field-plate length, types of insulator, and insulator thickness and thereby we checked change of the electric field distribution and breakdown voltage characteristics. As optimizing field-plate structure, electric fields concentrated near the gate edge and field-plate edge are effectively dispersed. Therefore, avalanche effect is decresed, so breakdown voltage characteristic is increased. As a result breakdown characteristics of optimized gate field-plate structure are increased by about 300% compared to those of the standard structure.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.10
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• pp.767-770
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• 2010

In this work, we investigated the static characteristics of 4H-SiC vertical metal-oxidesemiconductor field effect transistors (VMOSFETs) by adjusting the doping level of n-epilayer and the effect of a current spreading layer (CSL), which was inserted below the p-base region with highly doped n+ state ($5{\times}10^{17}cm^{-3}$). The structure of SiC VMOSFET was designed by using a 2-dimensional device simulator (ATLAS, Silvaco Inc.). By varying the n-epilayer doping concentration from $1{\times}10^{16}cm^{-3}$ to $1{\times}10^{17}cm^{-3}$, we investigated the static characteristics of SiC VMOSFETs such as blocking voltages and on-resistances. We found that CSL helps distribute the electron flow more uniformly, minimizing current crowding at the top of the drift region and reducing the drift layer resistance. For that reason, silicon carbide VMOSFET structures of highly intensified blocking voltages with good figures of merit can be achieved by adjusting CSL and doping level of n-epilayer.

• Radiation Oncology Journal
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• v.27 no.1
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• pp.42-48
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• 2009

Purpose: The introduction of image guided radiation therapy/four-dimensional radiation therapy (IGRT/4DRT) potentially increases the accumulated dose to patients from imaging and verification processes as compared to conventional practice. It is therefore essential to investigate the level of the imaging dose to patients when IGRT/4DRT devices are installed. The imaging dose level was monitored and was compared with the use of pre-IGRT practice. Materials and Methods: A four-dimensional CT (4DCT) unit (GE, Ultra Light Speed 16), a simulator (Varian Acuity) and Varian IX unit with an on-board imager (OBI) and cone beam CT (CBCT) were installed. The surface doses to a RANDO phantom (The Phantom Laboratory, Salem, NY USA) were measured with the newly installed devices and with pre-existing devices including a single slice CT scanner (GE, Light Speed), a simulator (Varian Ximatron) and L-gram linear accelerator (Varian, 2100C Linac). The surface doses were measured using thermo luminescent dosimeters (TLDs) at eight sites-the brain, eye, thyroid, chest, abdomen, ovary, prostate and pelvis. Results: Compared to imaging with the use of single slice non-gated CT, the use of 4DCT imaging increased the dose to the chest and abdomen approximately ten-fold ($1.74{\pm}0.34$ cGy versus $23.23{\pm}3.67$cGy). Imaging doses with the use of the Acuity simulator were smaller than doses with the use of the Ximatron simulator, which were $0.91{\pm}0.89$ cGy versus $6.77{\pm}3.56$ cGy, respectively. The dose with the use of the electronic portal imaging device (EPID; Varian IX unit) was approximately 50% of the dose with the use of the L-gram linear accelerator ($1.83{\pm}0.36$ cGy versus $3.80{\pm}1.67$ cGy). The dose from the OBI for fluoroscopy and low-dose mode CBCT were $0.97{\pm}0.34$ cGy and $2.3{\pm}0.67$ cGy, respectively. Conclusion: The use of 4DCT is the major source of an increase of the radiation (imaging) dose to patients. OBI and CBCT doses were small, but the accumulated dose associated with everyday verification need to be considered.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.55-55
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• 2009

Silicon Carbide (SiC) is a material with a wide bandgap (3.26eV), a high critical electric field (~2.3MV/cm), a and a high bulk electron mobility (${\sim}900cm^2/Vs$). These electronic properties allow high breakdown voltage, high frequency, and high temperature operation compared to Silicon devices. Although various SiC DMOSFET structures have been reported so far for optimizing performances. the effect of channel dimension on the switching performance of SiC DMOSFETs has not been extensively examined. In this paper, we report the effect of the interface states ($Q_s$) on the transient characteristics of SiC DMOSFETs. The key design parameters for SiC DMOSFETs have been optimized and a physics-based two-dimensional (2-D) mixed device and circuit simulator by Silvaco Inc. has been used to understand the relationship with the switching characteristics. To investigate transient characteristic of the device, mixed-mode simulation has been performed, where the solution of the basic transport equations for the 2-D device structures is directly embedded into the solution procedure for the circuit equations. The result is a low-loss transient characteristic at low $Q_s$. Based on the simulation results, the DMOSFETs exhibit the turn-on time of 10ns at short channel and 9ns at without the interface charges. By reducing $SiO_2/SiC$ interface charge, power losses and switching time also decreases, primarily due to the lowered channel mobilities. As high density interface states can result in increased carrier trapping, or recombination centers or scattering sites. Therefore, the quality of $SiO_2/SiC$ interfaces is important for both static and transient properties of SiC MOSFET devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.9
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• pp.1-5
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• 2011

In this paper, we investigated the characteristics of AlGaN/GaN HEMTs to optimize their DC and RF characteristics by using a two-dimensional device simulator. First, we analyzed the variation of the DC characteristics with respect to the variation of 2DEG concentrations when varying the Al mole fraction and the thickness of the AlGaN layer. Then, we examined the variation of the RF characteristics by varying the size and the location of the gate, source and drain electrodes. When the Al mole fraction increased from 0.2 to 0.45, both the transconductance and I-V characteristics increased. On the other hand, the I-V characteristics were improved but transconductance was decreased as the thickness of the AlGaN layer increased from 10nm to 50nm. In the RF characteristics, the gate length was found to be the most influential parameter, and the RF characteristics were improved when the gate length was shorten.

• Journal of the Korean Vacuum Society
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• v.20 no.4
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• pp.258-265
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• 2011

A zero-dimensional global model simulator for atmospheric pressure oxygen plasmas has been developed. The simulation model considers the configurations similar to that of plasma needle device. The simulation results show that those species of O, $O_3$, $O_2*$ and ${O_2}^+$ have the highest density in sequence. Electrons dissipate most of their energy through the collisions with oxygen molecules. If the input power increases, the density of most species also increases as much as three-boy collision for the creation of ozone is weakened and hence the density of ozone decreases. The body to volume ratio also affects the plasma density.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.12
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• pp.2899-2904
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• 2015

This paper introduces about the effect on $I_{DS}-V_{GS}$ characteristic of transistor that interface trap charge is created by damage due to heat in a 3D sequential inverter. A interface trap charge distribution in oxide layer in a 3D sequential inverter is extracted using two-dimensional device simulator. The variation of threshold voltage of top transistor according to the gate voltage variation of bottom transistor is also described in terms of Inter Layer Dielectric (ILD) length of 3D sequential inverter, considering the extracted interface trap charge distribution. The extracted interface trap density distribution shows that the bottom $HfO_2$ layer and both the bottom and top $SiO_2$ layer were relatively more affected by heat than the top $HfO_2$ layer with latest process. The threshold voltage variations of the shorter length of ILD in 3D sequential inverter under 50nm is higher than those over 50nm. The $V_{th}$ variation considering the interface trap charge distribution changes less than that excluding it.

• The Journal of Korean Society for Radiation Therapy
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• v.18 no.2
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• pp.105-112
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• 2006

Purpose: To demonstrate that water bolus in the patient surface can decrease the dose inhomogeneity by patient surface large tissue defect when the surface is in an electron-beam field. And We tried to find a easy way to water control. Methods and Materials: To demonstrate the use of water bolus in the irregular surface clinically, the case of a patient with myxofibrosarcoma of the chest wall who was treated with electrons. We obtained dose distribution using missing tissue option of PINACLE 6.2b (ADAC, USA). We fabricate a Mev-green for water bolus in patient with defect of tissue. Then put the water bolus which is vinyl packed water into the designed Mev-green. We peformed CT scan with CT-simulator. Three-dimensional (3D) dose distributions with and without water bolus in the large irregular chest wall were calculated for a representative patient. Resulting dose distributions and dose-volume histograms of water bolus were compared with missing tissue option and non bolus plans. We fabricate a new water control device. Results: Controlled Water bolus markedly decrease the dose heterogeneity, and minimizes normal tissue exposure caused by the surface irregularities of the chest wall mass. In the test case, The non bolus plan has a maximum target dose of 132%. After applying water bolus, the maximum target dose has been reduced substantially to 110.4%. The maximum target dose was reduced by 21.6% using this technique. Conclusion: The results showed that controlled water bolus could significantly improve the dose homogeneity in the PTV for patients treated with electron therapy using water control device. This technique may reduce the incidence of normal organ complications that occur after electron-beam therapy in irregular surface. And our new device shows handiness of water control.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.4
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• pp.75-87
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• 2010

For two input-protection schemes suitable for RF ICs utilizing the thyristor and diode protection devices, which can be fabricated in standard CMOS processes, we attempt an in-depth comparison on HBM ESD robustness in terms of lattice heating inside protection devices and peak voltages developed across gate oxides in input buffers, based on DC, mixed-mode transient, and AC analyses utilizing a 2-dimensional device simulator. For this purpose, we construct an equivalent circuit for an input HBM test environment of a CMOS chip equipped with the input ESD protection circuits, which allows mixed-mode transient simulations for various HBM test modes. By executing mixed-mode simulations including up to six active protection devices in a circuit, we attempt a detailed analysis on the problems, which can occur in real tests. In the procedure, we suggest to a recipe to ease the bipolar trigger in the protection devices and figure out that oxide failure in internal circuits is determined by the junction breakdown voltage of the NMOS structure residing in the protection devices. We explain the characteristic differences of two protection schemes as an input ESD protection circuit for RF ICs, and suggest valuable guidelines relating design of the protection devices and circuits.