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Optimization of the DC and RF characteristics in AlGaN/GaN HEMT  

Son, Sung-Hun (School of Electrical Engineering, Korea University)
Kim, Tae-Geun (School of Electrical Engineering, Korea University)
Publication Information
Journal of the Institute of Electronics Engineers of Korea SD / v.48, no.9, 2011 , pp. 1-5 More about this Journal
Abstract
In this paper, we investigated the characteristics of AlGaN/GaN HEMTs to optimize their DC and RF characteristics by using a two-dimensional device simulator. First, we analyzed the variation of the DC characteristics with respect to the variation of 2DEG concentrations when varying the Al mole fraction and the thickness of the AlGaN layer. Then, we examined the variation of the RF characteristics by varying the size and the location of the gate, source and drain electrodes. When the Al mole fraction increased from 0.2 to 0.45, both the transconductance and I-V characteristics increased. On the other hand, the I-V characteristics were improved but transconductance was decreased as the thickness of the AlGaN layer increased from 10nm to 50nm. In the RF characteristics, the gate length was found to be the most influential parameter, and the RF characteristics were improved when the gate length was shorten.
Keywords
HEMT; DC and RF characteristics; $f_T$; $f_{max}$;
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Times Cited By KSCI : 1  (Citation Analysis)
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