• Applied Microscopy
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• v.41 no.2
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• pp.81-88
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• 2011

Even though importance of nano-scale structure and compositional analysis have been getting increased, existing analysis tools have been reached to their limitations. Recent development of Atom Probe Tomography (APT), providing 3-dimensional elemental distribution and compositional information with sub-nm scale special resolution and tens of ppm detection limit, is one of key technique which can overcome these limitations. However, due to the fact that APT is not well known yet in the domestic research area, it has been rarely utilized so far. Therefore, in this article, the theoretical background of APT was briefly introduced with sample preparation to help understanding APT analysis.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.11
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• pp.1-7
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• 2008

In this work, a two dimensional, self-consistent Poisson-$Schr{\ddot{o}}dinger$ solver has been implemented to study C-V characteristics in nanometer scale MuGFETs with considering quantum effects. The quantum-mechanical effects on gate-channel capacitance for different device dimension and gate configurations of nanometer scale MuGFETs have been analyzed. It has been found that 4he gate-channel capacitance per unit gate area is increased as the device dimension decreases. For different gate configurations, the gate-channel capacitance is decreased with increase of effective gate number. Those resu1ts have been explained by the distribution profile of electron concentration in the silicon surface and inversion capacitance. The length of inversion-layer centroid has been calculated from inversion capacitance with device dimension and gate configurations.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.1-7
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• 2004

We performed two-dimensional (20) computer-based modeling and simulation of FinFET by solving the coupled Poisson-Schrodinger equations quantum-mechanically in a self-consistent manner. The simulation results are carefully investigated for FinFET with gate length(Lg) varying from 10 to 80nm and with a Si-fin thickness($T_{fin}$) varying from 10 to 40nm. Current-voltage (I-V) characteristics are compared with the experimental data. Device optimization has been performed in order to suppress the short-channel effects (SCEs) including the sub-threshold swing, threshold voltage roll-off, drain induced barrier lowering (DIBL). The quantum-mechanical simulation is compared with the classical appmach in order to understand the influence of the electron confinement effect. Simulation results indicated that the FinFET is a promising structure to suppress the SCEs and the quantum-mechanical simulation is essential for applying nano-scale device structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.127.2-127.2
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• 2013

오늘날 유기고분자기반 태양전지는 다른 태양전지와 비교될 정도로 낮은 광변환효율로 인해 효율향 상을 위한 많은 연구들이 진행되어 왔다. 그중 패터닝을 통한 광포집률과 charge carrier 수집효율이 증가되었다는 많은 보고들이 있었다. 따라서 우리는 200~1,400 nm polystyrene bead를 합성하여 air-liquid interfacial 방법을 이용해 2차원 육방조밀구조를 갖는 template를 형성하고 Nanosphere lithography (NSL)를 이용하여 대면적으로 균일한 poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)를 패턴화하였다. 균일한 패턴형성을 측정하기위해 Field Emission Scanning Electron Microscopy (FE-SEM), image를 얻었으며, Atomic Force Microscopy (AFM)를 통해 형성된 패턴의 낙차 높이를 얻었고, Near IR-UV-Vis을 통해 bead size 변화에따라 얻어진 PEDOT:PSS 패턴의 반사율을 측 정하였다.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.6
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• pp.255-260
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• 2023

As demanding the detection of explosive molecules, it is required to develop rapidly and precisely responsive sensors with ultra-high sensitivity. Since two-dimensional semiconductors have an atomically thin body nature where mobile carriers accumulate, the abrupt modulation carrier in the thin body channel can be expected. To investigate the effectiveness of WSe₂ semiconductor materials as a detection material for TNT (Trinitrotoluene) explosives, WSe₂ was synthesized using thermal chemical vapor deposition, and afterward, WSe₂ FETs (Field Effect Transistors) were fabricated using standard photo-lithograph processes. Raman Spectrum and FT-IR (Fourier-transform infrared) spectroscopy reveal that the adsorption of TNT molecules induces the structural transition of WSe₂ crystalline. The electrical properties before and after adsorption of TNT molecules on the WSe₂ surface were compared; as -50 V was applied as the back gate bias, 0.02 μA was recorded in the bare state, and the drain current increased to 0.41 μA with a dropping 0.6% (w/v) TNT while maintaining the p-type behavior. Afterward, the electrical characteristics were additionally evaluated by comparing the carrier mobility, hysteresis, and on/off ratio. Consequently, the present report provides the milestone for developing ultra-sensitive sensors with rapid response and high precision.

• Applied Chemistry for Engineering
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• v.23 no.1
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• pp.1-7
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• 2012

In this article, I will introduce recent developments of environmental-friendly materials fabricated using atomic layer deposition (ALD). Advantages of ALD include fine control of the thin film thickness and formation of a homogeneous thin fim on complex-structured three-dimensional substrates. Such advantages of ALD can be exploited for fabricating environmental-friendly materials. Porous membranes such as anodic aluminum oxide (AAO) can be used as a substrate for $TiO_2$ coating with a thickness of about 10 nm, and the $TiO_2$-coated AAO can be used as filter of volatile organic compound such as toluene. The unique structural property of AAO in combination with a high adsorption capacity of amorphous $TiO_2$ can be exploited in this case. $TiO_2$ can be also deposited on nanodiamonds and Ni powder, which can be used as photocatalyst for degradation of toluene, and $CO_2$ reforming of methane catalyst, respectively. One can produce structures, in which the substrates are only partially covered by $TiO_2$ domains, and these structures turns out to be catalytically more active than bare substrates, or complete core-shell structures. We show that the ALD can be widely used not only in the semiconductor industry, but also environmental science.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.3
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• pp.110-114
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• 2017

$NiO/NiCo_2O_4$ nanocubes were successfully synthesized via the calcination process of $Ni_3[Co(CN)_6]_2$ PBAs. The prepared monodispersed $Ni_3[Co(CN)_6]_2$ PBAs were aggregated by 'self-assembly' of the nuclei generated during the synthesis reaction. The self-assembly rate of the particles is affected by the temperature and the amount of surfactant SDBS (sodium dodecylbenzenesulfonate). FESEM analysis shows that monodispersed 200 nm PBA nanocubes are obtained at 0.25 g SDBS and $60^{\circ}C$ temperature. Thermal behavior was confirmed by thermogravimetric-differential thermal analysis (TG-DTA) to determine optimal calcination conditions. Then, field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD) analyzes were performed to investigate the morphology and crystallinity of the particles precursors and $NiO/NiCo_2O_4$ nanocubes.

• Korean Journal of Optics and Photonics
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• v.20 no.1
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• pp.1-5
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• 2009

Recently, much research has been done for to realizeing nano-scale photonic circuits based on photonic crystal, plasmonics and silicon photonics in order to overcome fundamental limits of electronic circuits. These limits include such as bottleneck of speed, and size that cannot be reduced. Even though several kinds of coupling schemes have been reported, coupling structures are still large when it is compared with the nano-scale optical circuit. In this paper, we proposed using a very thin Fresnel lens while shortening the focal length of the Fresnel lens as much as possible. We proposed, for the first time, to utilize metal slits that are able to use the optical coupling system between a nano-scale optical circuit and the standard single mode optical fiber for overcoming the limitation of focal length shortening of the Fresnel lens. Comparative study has been carried out with a FDTD simulation between normal and metal slit assisted Fresnel lens. From the result of simulation, we can achieve 65% coupling efficiency for the metal-slit Fresnel lens when the focal length of metal-slit Fresnel lens is just $4{\mu}m$. On the other hand, the coupling efficiency of the normal Fresnel lens is about 43%.

• Journal of the Computational Structural Engineering Institute of Korea
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• v.33 no.3
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• pp.201-207
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• 2020

In this study, various types of porous beams were designed and analyzed to examine the relationship between the behavior of a porous beam and certain nonlocal parameters. The nonlocal parameters were defined as functions of the conditions of defects in the porous material. Finite element analysis was conducted on the beams under typical boundary and loading conditions. Beams with stiffeners having the same dimensions as the defects in the porous beams were also analyzed. The deformation tendency of these beams was determined and described in terms of the nonlocal parameters. The deformation of a porous beam was linearly proportional to the square of the diameters of the defects, whereas that of a beam with a stiffener was linearly proportional to the cube of the diameter of the stiffener. Furthermore, for a stiffened beam with axial loading, the results derived from a 3D solid element and those under 2D plane stress conditions were different.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.238.1-238.1
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• 2015

2차원 탄소나노재료인 그래핀은 본연의 우수한 물성으로 인하여 전자소자, 에너지 저장매체, 유연성 전도막 등 다양한 분야로의 응용가능성이 제기되었다. 그러나 실제적인 응용을 위해서는 그래핀의 구조적인 결함을 최소화하며, 특성을 자유로이 제어하거나 향상시키는 공정의 개발이 필요하다. 일반적으로 화학적 도핑은 그래핀의 전기적 특성을 제어하는 효율적인 방법으로 알려져 있다. 화학적 도핑의 방법으로는 그래핀을 특정 가스 분위기에서 고온 열처리하거나 활성종들이 존재하는 플라즈마에 노출시킴으로써, 그래핀을 구성하는 탄소원자를 이종원자로 치환하거나 표면에 흡착시켜 기능화 된 그래핀을 얻는 방법 등이 제시되었다. 특히 플라즈마를 이용한 도핑방법은 저온에서 단시간의 처리로 효율적인 도핑이 가능하고, 인가전력, 처리시간 등의 플라즈마 변수를 변경하여 도핑정도를 수월하게 제어할 수 있다는 장점을 가지고 있다. 그러나 플라즈마 내에 존재하는 극성을 띄는 다양한 활성종들로 인하여 그래핀에 구조적인 결함을 형성하여 오히려 특성이 저하될 수 있어 이를 고려한 플라즈마 공정조건의 설정이 필수적이다. 따라서 본 연구에서는 플라즈마에 노출된 그래핀의 Raman 특성을 고찰함으로써 화학적 도핑과 구조적인 결함의 경계를 확립하고 구조결함의 형성을 최소화한 효율적인 도핑조건을 도출하였다. 고품질 그래핀은 물리적 박리법을 이용하여 300 nm 두께의 실리콘 산화막이 존재하는 실리콘 웨이퍼 위에 제작하였으며, 평행 평판형 직류 플라즈마 장치를 이용하여 전극의 위치, 인가전력, 처리시간을 변수로 암모니아(NH3) 플라즈마를 방전하여 그래핀의 Raman 특성변화를 관찰하였다. 그래핀의 구조적 결함 및 도핑은 라만 스펙트럼의 D, G, D', 2D밴드의 강도비와 G밴드의 위치와 반치폭(Full width at half maximum; FWHM)의 변화를 통해 확인하였다. 그 결과, 인가전력과 처리시간이 증가함에 따라 그래핀의 도핑레벨이 증가되고, 이후에는 도핑효과가 없어지고 결함의 정도가 상승하는 천이구역이 존재하며, 이를 넘어서는 너무 높은 인가적력의 처리는 그래핀에 결함을 형성하여 구조적인 붕괴를 야기함을 확인하였다.