• Food Science of Animal Resources
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• v.36 no.6
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• pp.744-751
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• 2016

The objective of this study was to investigate the effects of partial beef fat replacement (0, 30, 50, 100%) with gelled emulsion (GE) prepared with olive oil on functional and quality properties of model system meat emulsion (MSME). GE consisted of inulin and gelatin as gelling agent and characteristics of gelled and model system meat emulsions were investigated. GE showed good initial stability against centrifugation forces and thermal stability at different temperatures. GE addition decreased the pH with respect to increase in GE concentration. Addition of GE increased lightness and yellowness but reduced redness compared to control samples. The results of the study showed that partial replacement of beef fat with GE could be used for improving cooking yield without negative effects on water holding capacity and emulsion stability compared to C samples when replacement level is up to 50%. The presence of GE significantly affected textural behaviors of samples (p<0.05). In conclusion, our study showed that GE have promising impacts on developing healthier meat product formulations besides improving technological characteristics.

• Journal of the Korean Ceramic Society
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• v.56 no.1
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• pp.65-70
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• 2019

Simple fabrication of a powdered Ge-reduced graphene oxide (Ge-rGO) composite via spray pyrolysis and reduction is introduced herein. Successful incorporation of the rGO nanosheets with Ge hindered the aggregation of Ge and conferred enhanced structural stability to the composite by alleviating the mechanical stress associated with drastic volume changes during repeated cycling. The Li-ion storage performance of Ge-rGO was compared with that of powdered Ge metal. The reversible discharge capacity of Ge-rGO at the $200^{th}$ cycle was $748mA\;h\;g^{-1}$ at a current density of $1.0A\;g^{-1}$ and Ge-rGO showed a capacity of $375mA\;h\;g^{-1}$ even at a high current density of $5.0A\;g^{-1}$. The excellent performance of Ge-rGO is attributed to the structural robustness, enhanced electrical conductivity, and formation of open channels between the rGO nanosheets, which facilitated electrolyte penetration for improved Li-ion diffusion.

• Food Science and Industry
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• v.55 no.1
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• pp.33-44
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• 2022

More than 500 different compounds have been identified in the cooking process of frying oil as a result of chemical reactions such as oxidation, polymerization, hydrolysis and pyrolysis, 3-MCPDe(3-Monochloropropane -1,2-diol ester) and GE(glycidyl ester) are also included in these compounds. When MCPDe and GE derivatives are absorbed into the body, they are converted into free forms by lipase enzymes, which turn into 3-MCPD and glycidol(2,3-epoxy-1-propanol), respectively. These exhibit genotoxic and carcinogenic effects. As the toxicity of 3-MCPDe and GE is known worldwide, the health risk is being researched. However, regulations have not been established in countries other than the European Union(EU). Several studies for the analysis of 3-MCPDe and GE are being conducted, and direct methods and indirect methods are applied. As a result of analyzing 3-MCPDe and GE contained in commercially available foods by various analysis methods, the content of 3-MCPDe in baby food/infant formula was ND~600 ㎍/mL and GE was ND~750 ㎍/mL. and purified vegetable oils and fats showed <250-8,430 ㎍/mL and 1,880-9,530 ㎍/mL. Thus, 3-MCPDe and GE were detected in various food types, several studies for the reduction of 3-MCPDe and GE are being conducted around the world.

• Korean Journal of Materials Research
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• v.12 no.6
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• pp.470-475
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• 2002

The effects of the conditions of the collector formation on electrical characteristics of the packaged SiGe hetero-junction bipolar transistors (HBT) were investigated. While the DC characteristics of SiGe HBTs such as IV characteristic, forward current gain, Early voltage, and breakdown voltage were hardly changed after packaging, the AC characteristics such as $f_{\tau}\; and\; f_{max}$ were degraded severely. With the rise of the collector concentration, the break-down voltage decreased but the $f_{\tau}$ increased. Additionally, $\beta$ and $f_{\tau}$ values were kept high in the range of elevated collector current due to the increase of the critical current density for the onset of the Kirk effect. The devices As implanted before the collector deposition showed lower breakdown voltage and higher $f_{\tau}$ than the others, which seems to be originated from the As up-diffusion resulting in the thinner collector.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.6
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• pp.439-444
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• 2012

For the application of photo-detector as active layer, we have studied how to deposit SiGe thin film using an independent Si target and Ge target, respectively. Both targets were synthesized by purity of 99.999%. Plasma generators were generated by radio frequency (rf, 13.56 MHz) and direct current (dc) power. When Ge and Si targets were sputtered by dc and rf power, respectively, we could observe the growth of highly crystalline Ge thin film at the temperature of $400^{\circ}C$ from the result of raman spectroscopy and X-ray diffraction method. However, SiGe thin film did not deposit above method. Inversely, we changed target position like that Ge and Si targets were sputtered by rf and dc power, respectively. Although Ge crystalline growth without Si target sputtering deteriorated considerably, the growth of SiGe thin film was observed with increase of Si dc power. SiGe thin film was evaluated as microcrystalline phase which included (111) and (220) plane by X-ray diffraction method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.9
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• pp.916-923
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• 2004

In this paper, the strained Si$_{0.9}$Ge$_{0.1}$ epitaxial layers grown by a reduced pressure chemical vapor deposition (RPCVD) on Si (100) were characterized by Rutherford backscattering spectrometery (RBS) for the fabrication of an SiGe heterojunction bipolar transistor(HBT). RBS spectra of the ${Si}_0.9{Ge}_0.1$epitaxial layers grown on the Si substrates which were implanted with the phosphorus (P) ion and annealed at a temperature between $850^{\circ}C$ - $1000^{\circ}C$ for 30min were analyzed to investigate the post thermal annealing effect on the grown${Si}_0.9{Ge}_0.1$epitaxial layer quality. Although a damage of the substrates by P ion-implantation might be cause of the increase of RBS yield ratios, but any defects such as dislocation or stacking fault in the grown ${Si}_0.9{Ge}_0.1$ epitaxial layer were not found in transmission electron microscope (TEM) photographs. The post high temperature rapid thermal annealing (RTA) effects on the crystalline quality of the ${Si}_0.9{Ge}_0.1$ epitaxial layers were also analyzed by RBS. The changes in the RBS yield ratios were negligible for RTA a temperature between $900^{\circ}C$ - $1000^{\circ}C$for 20 sec, or $950^{\circ}C$for 20 sec - 60 sec. A SiGe HBT array shows a good Gummel characteristics with post RTA at $950^{\circ}C$ for 20 sec.sec.sec.

• Progress in Superconductivity and Cryogenics
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• v.21 no.2
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• pp.36-39
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• 2019

Effects of the spherically shaped Ge and the rod-like carbon-coated Ge on the superconducting properties of $MgB_2$ were investigated. Pure Ge and carbon-coated Ge nano-powders were synthesized under the different amount of $CH_4$ (0 to 5 kPa) by using DC thermal plasma method. When the $CH_4$ was added ~100 nm sized Ge with a spherical shape changed to rod-like morphology with a diameter of ~30-70 nm and a length of ~400-500 nm. Also it was confirmed that thin carbon layers of a few nanometers were formed along the rod length and the agglomerated carbons were found on the edges of rods. Pure spherical Ge and Ge/C rods were mixed and milled with Mg & B precursor to form the doped $MgB_2$ bulk samples by the solid-state reaction method. Almost no change of $T_c$ was noticed for the pure Ge-added $MgB_2$, whereas $T_c$ was found to decrease with the Ge/C-added $MgB_2$ samples. It was found that the pure spherical Ge showed to have a negative effect on the flux pinning of $MgB_2$. However, Ge/C rods can enhance the flux pinning property of $J_c$ due to the coated carbon on Ge rods.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1016-1018
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• 1995

In this paper, we studied the electrical and the microwave properties of the amorphous $As_{10}Ge_{15}Te_{75}$ thin film. The electrical properties of a-$As_{10}Ge_{15}Te_{75}$ thin film were examined d.c. and a.c. bias with annealing condition. As the result of the electrical properties, we observed the physical characteristics of a-$As_{10}Ge_{15}Te_{75}$ thin film such as the density of defect states, characteristic relaxation time, localized density of states, and localized wave function by using CBH and QMT model. We also examined the microwave conduction properties before and after d.e. switching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.67-70
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• 1995

Amorpous As$\sub$10/Ge$\sub$15/Te$\sub$75/ device shows the memory switching characterisite under d.c. bias. In bulk material, a-As$\sub$10/Ge/sub15/Te$\sub$75/s switching voltage range is above 100 volts. Our purposes in this gaudy are decreasing a switching threshold voltage, finding the properties of d.c., a.c. conduction, and the characterisitics of switching threshold voltage fur a-As$\sub$10/Ge$\sub$15/Te$\sub$75/. As the results, the d.c.and a.c. conductivities increase with temperature. From the data of conductivity, various electrical and physical properties are obtained experimentally. The switching threshold voltages decrease with increasing annealing temperature and time, but increase with increasing film thickness and distance of electrode for d.c. bias.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.362-365
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• 2001

The chalcogenide glasses of thin films have the superior property of photoinduced anisotrophy(PA). In this study, we observed the linear dichroism(D) using the irradiation with polarized He-Ne laser light, in the $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ multi-layer. Mutilayer structures formed by alternating metal(Ag) a chalcogenide$(As_{40}Ge_{10}Se_{15}S_{35})$. Such multilayer structures have a greater sensitivity to illumination am larger dichroism in comparison the conventional double layer structure. Also new phenomena are discovered. These results will be show a capability of new method that suggested more improvement of photoinduced anisotropy property.