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http://dx.doi.org/10.3740/MRSK.2002.12.6.470

Electrical Characteristics of the Packaged SiGe Hetero-Junction Bipolar Transistors Fabricated with Various Conditions of the Collector Formation  

Lee, Seung-Yun (SiGe Devices Team, Electronics and Telecommunications Research Institute(ETRI))
Lee, Sang-Heung (SiGe Devices Team, Electronics and Telecommunications Research Institute(ETRI))
Kim, Hong-Seung (SiGe Devices Team, Electronics and Telecommunications Research Institute(ETRI))
Park, Chan-U (SiGe Devices Team, Electronics and Telecommunications Research Institute(ETRI))
Kim, Sang-Hun (SiGe Devices Team, Electronics and Telecommunications Research Institute(ETRI))
Lee, Ja-Yeol (SiGe Devices Team, Electronics and Telecommunications Research Institute(ETRI))
Sim, Gyu-Hwan (SiGe Devices Team, Electronics and Telecommunications Research Institute(ETRI))
Gang, Jin-Yeong (SiGe Devices Team, Electronics and Telecommunications Research Institute(ETRI))
Publication Information
Korean Journal of Materials Research / v.12, no.6, 2002 , pp. 470-475 More about this Journal
Abstract
The effects of the conditions of the collector formation on electrical characteristics of the packaged SiGe hetero-junction bipolar transistors (HBT) were investigated. While the DC characteristics of SiGe HBTs such as IV characteristic, forward current gain, Early voltage, and breakdown voltage were hardly changed after packaging, the AC characteristics such as $f_{\tau}\; and\; f_{max}$ were degraded severely. With the rise of the collector concentration, the break-down voltage decreased but the $f_{\tau}$ increased. Additionally, $\beta$ and $f_{\tau}$ values were kept high in the range of elevated collector current due to the increase of the critical current density for the onset of the Kirk effect. The devices As implanted before the collector deposition showed lower breakdown voltage and higher $f_{\tau}$ than the others, which seems to be originated from the As up-diffusion resulting in the thinner collector.
Keywords
SiGe; HBT; bipolar transistor; package; collector;
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1 R. Goezfried, F. Beisswanger, S. Gerlach, A. Schueppen, H. Dietrich, U. Seiler, K.-H. Bach, and J. Alters, IEEE Trans. Microwave Theory Tech., 46 (5), 661 (1998)   DOI   ScienceOn
2 S.S. Iyer, G.L. Pattern, J.M.C. Stork, B.S. Meyerson, and D.L. Harame, IEEE Trans. Electron. Devices, 36(10), 2043 (1989)   DOI   ScienceOn
3 SILVACO International, ATHENA (2D process simulation framework), SILVACO International Inc., Santa Clara, (1996)
4 K. Hartmann, W. Kotyczka, and M.J.O. Strutt, Electron. Lett, 7(18), 510 (1971)   DOI   ScienceOn
5 E.S. Yang, Microelectronic Devices, p.87, McGraw-Hill, Singapore, (1988)
6 S. Wolf, Silicon Processing for the VLSI Era Volume 2, p. 469, Lattice Press, Sunset Beach, (1990)
7 S.-Y. Lee, H.-S. Kim, S.-H. Lee, K.-H. Shim, J.-Y. Kang, and M.-K. Song, J. Mater. Sci. : Mater. Electron., 12 (8), 467 (2001)   DOI   ScienceOn
8 D.J. Roulston, Bipolar Semiconductor Devices, p.241, Mc-Graw-Hill, Singapore, (1990)
9 P.J. van Wijnen, J.L. de Jong, and B. van Schravendijk, Proc. IEEE BCTM, 110 (1990)
10 M. Liang and M.E. Law, Solid-State Electron., 35(7), 1017 (1992)   DOI   ScienceOn
11 SILVACO International, UTMOST (Universal Transistor Modeling SofTware) III, SILVACO International Inc., Santa Clara, (1995)
12 P.J. van Wijnen, H.R. Claessen, and E.A. Wolsheimer, Proc. IEEE BCTM, 70 (1987)
13 T. Ikeda, A. Watanabe, Y. Nishio, I. Masuda, N. Tamba, M. Odaka, and K. Ogiue, IEEE Trans. Electron. Devices, ED-34(6), 1304(1987)
14 D.J. Roulston, Bipolar Semiconductor Devices, p. 257, McGraw-Hill, Singapore, (1990)