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http://dx.doi.org/10.4313/JKEM.2012.25.6.439

The Study of Sputtered SiGe Thin Film Growth for Photo-detector Application  

Kim, Do-Young (School of Electricity and Electronics, Ulsan College)
Kim, Sun-Jo (School of Electrical and Electronic Engineering, Yonsei University)
Kim, Hyung-Jun (School of Electrical and Electronic Engineering, Yonsei University)
Han, Sang-Youn (Samsung Display LCD R&D Center)
Song, Jun-Ho (Samsung Display LCD R&D Center)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.25, no.6, 2012 , pp. 439-444 More about this Journal
Abstract
For the application of photo-detector as active layer, we have studied how to deposit SiGe thin film using an independent Si target and Ge target, respectively. Both targets were synthesized by purity of 99.999%. Plasma generators were generated by radio frequency (rf, 13.56 MHz) and direct current (dc) power. When Ge and Si targets were sputtered by dc and rf power, respectively, we could observe the growth of highly crystalline Ge thin film at the temperature of $400^{\circ}C$ from the result of raman spectroscopy and X-ray diffraction method. However, SiGe thin film did not deposit above method. Inversely, we changed target position like that Ge and Si targets were sputtered by rf and dc power, respectively. Although Ge crystalline growth without Si target sputtering deteriorated considerably, the growth of SiGe thin film was observed with increase of Si dc power. SiGe thin film was evaluated as microcrystalline phase which included (111) and (220) plane by X-ray diffraction method.
Keywords
Microcrystalline SiGe; Sputtering; Raman spectroscopy; IR detector; Touch screen;
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