Proceedings of the KIEE Conference (대한전기학회:학술대회논문집)

The Korean Institute of Electrical Engineers (대한전기학회)
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Electrical and Microwave properties of Amorphous As-Ge-Te devices

비정질 As-Ge-Te 스위칭 소자의 전기적 및 마이크로파 주파수 특성

  • 이병석 (광운대학고 전자재료공학과) ;
  • 천석표 (광운대학고 전자재료공학과) ;
  • 이현용 (광운대학고 전자재료공학과) ;
  • 이영종 (여주전문대학고 전자공학자) ;
  • 정홍배 (광운대학고 전자재료공학과)
  • Published : 1995.07.20
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Abstract

In this paper, we studied the electrical and the microwave properties of the amorphous $As_{10}Ge_{15}Te_{75}$ thin film. The electrical properties of a-$As_{10}Ge_{15}Te_{75}$ thin film were examined d.c. and a.c. bias with annealing condition. As the result of the electrical properties, we observed the physical characteristics of a-$As_{10}Ge_{15}Te_{75}$ thin film such as the density of defect states, characteristic relaxation time, localized density of states, and localized wave function by using CBH and QMT model. We also examined the microwave conduction properties before and after d.e. switching.

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