RBS Analysis on the Si0.9Ge0.1 Epitaxial Layer for the fabrication of SiGe HBT
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한태현
(광운대학교 전자재료공학과)
안호명 (광운대학교 전자재료공학과) 서광열 (광운대학교 전자재료공학과) |
1 |
Defects in epitaxial multilayers I. Misfit dislocations in layers
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2 |
A 200 mm SiGe-HBT technology for wireless and mixed-signal applications
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3 |
SiGe HBT and BiCMOS technologies for optical transmission and wireless communication systems
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DOI ScienceOn |
4 |
A 9GHz bandwidth preamplifier in 10Gbps optical receiver using SiGe-base HBT
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5 |
SiGe HBT technology: A new contender for Si-based RF and microwave circuit applications
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DOI ScienceOn |
6 |
SiGe-H-Cl 계를 이용한 자기정렬HBT 용 Si 및 SiGe의 선택적 에피 성장
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DOI ScienceOn |
7 |
Defects in epitaxial multilayers Ⅱ. Dislocation pile-ups, threading dislocations, slip lines and cracks
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