• Journal of IKEEE
• /
• v.25 no.2
• /
• pp.350-355
• /
• 2021

IGBT is a power semiconductor device that contains both MOSFET and BJT structures, and it has fast switching speed of MOSFET, high breakdown voltage and high current of BJT characteristics. IGBT is a device that targets the requirements of an ideal power semiconductor device with high breakdown voltage, low V_CE-SAT, fast switching speed and high reliability. In this paper, we analyzed Gate oxide thickness, Trench Gate Width, and P+Emitter width, which are the top process parameters of 1,200V Trench Gate Field Stop IGBT, and suggested the optimized top process parameters. Using the Synopsys T-CAD Simulator, we designed IGBT devices with electrical characteristics that has breakdown voltage of 1,470 V, V_CE-SAT 2.17 V, Eon 0.361 mJ and Eoff 1.152 mJ.

• The Transactions of the Korean Institute of Electrical Engineers
• /
• v.43 no.3
• /
• pp.420-431
• /
• 1994

The HgCdTe material, which is II-VI compound semiconductor, is important materials for the fabrication of the infrared detectros. To suggest the model of accurate MIS C-V calculation for narrow band gap semiconductors such as HgCdTe, non-parabolicity from k.p theory and degeneracy effect are considered. And partially ionized effect and compensation effect which are material's properties are also considerd. Especially, degenerated material C-V characteristics from Fermi-Dirac statistics and exact charge theory are presented to get more accurate analysis of the experimental results. Also the comparison with calculation results between the general MIS theory from Boltzmann appoximation method and this model which is considered the narrow band gap semiconductor properties, show that this model is more useful theory to determination of accurate low and high frequency C-V characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1991.10a
• /
• pp.29-32
• /
• 1991

Non-volatile SNOSFET memory devices using CMOS 1Mbit design rule(1.2$\mu\textrm{m}$), whose channel width and length are 15${\times}$1.5$\mu\textrm{m}$, 15${\times}$1.5$\mu\textrm{m}$, 2.0${\times}$15$\mu\textrm{m}$ and length are 15${\times}$1.7$\mu\textrm{m}$, respectivley, were fabricated. And the transfer, Id-Vd and switching characteristics of the devices were investigated. As a result, the 15${\times}$1.5$\mu\textrm{m}$ device was good in the transfer characteristics and the switching characteristics were favourable, which had $\Delta$V$\sub$TH/=6.3V by appling pulse voltage of V$\sub$w/=+34V, Tw=50msec.

• 중국학논총
• /
• no.71
• /
• pp.23-40
• /
• 2021

'过' and '了' are the key points, as well as difficult ones, in the academic study of Chinese grammar and language teaching. This article analyzes this language use by taking two sentence structures as example, namely 'Pao le.' and 'Pao guo le.'. As the semantic meanings of 'V+了2' and 'V+过1+了2' are very similar. Therefore, it can be confusing for non-native speakers to master this usage. This article attempts to sort out and analyze the usage environment and pragmatic characteristics of 'V+过1+了2' by employing the examples from the data of Corpus of the Chinese Linguistics Research Center of Peking University. By focusing on the usage environment and pragmatic characteristics of '过' and it is desirable for teachers to combine semantics, syntax and pragmatics while explaining the grammar point, in order for learners to understand accurate information quickly and learn how to use it.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.33 no.2
• /
• pp.105-108
• /
• 2020

In this study, experiments and simulations were conducted for a 1,200-V-class trench Si insulated-gate bipolar transistor (IGBT) with a small cell pitch below 2.5 ㎛. Presently, as a power device, the 1,200-V-class trench Si IGBT is used for automotives including electric vehicles, hybrid electric vehicles, and industrial motors. We obtained a breakdown voltage of 1,440 V, threshold of 6 V, and state voltage drop of 1.75 V. This device is superior to conventional IGBTs featuring a planar gate. To derive its electrical characteristics, we extracted design and process parameters. The cell pitch was 0.95 ㎛ and total wafer thickness was 140 ㎛ with a resistivity of 60 Ω·cm. We will apply these results to achieve fine-pitch gate power devices suitable for electrical automotive industries.

• Korean Chemical Engineering Research
• /
• v.48 no.6
• /
• pp.737-740
• /
• 2010

High leakage current and threshold voltage shift(${\Delta}Vth$) are demerits of a-Si:H TFT. These characteristics are influenced by gate insulator and active layer film quality, surface roughness, and process conditions. The purpose of this investigation is to improve off current($I_{off}$) and ${\Delta}V_{th}$ characteristics. Nitrogen-rich deposition condition was applied to gate insulator, and hydrogen-rich deposition condition was applied to active layer to reduce electron trap site and improve film density. $I_{off}$ improved from 1.01 pA to 0.18 pA at $65^{\circ}C$, and ${\Delta}V_{th}$ improved from -1.89 V to 1.22 V.

• Journal of the East Asian Society of Dietary Life
• /
• v.27 no.3
• /
• pp.341-347
• /
• 2017

This study was carried out to investigate the characteristics and Vitamin $K_2$ (MK-7) productivity of Cheonggukjang fermented by Bacillus subtilis SRCM100757 depending on the inoculum concentration 0.5% (v/w), 1% (v/w) and 2% (v/w). The lowest moisture content and water activity were $53.7{\pm}0.6%$ and $8.39{\pm}0.09$ after fermentation for 72 hours at 2% (v/w). pH slowly became alkalized during fermentation, but there was no significant difference. Amino nitrogen content increased with time and the highest content was $580.8{\pm}1.9mg%$ after fermentation for 72 hours at 2% (v/w). Lightness (L value) and yellowness (b value) decreased with time, whereas redness (a value) hardly changed. MK-7 contents increased with time at each inoculum concentration. The highest content was $20.47{\pm}1.53$ after fermeatation for 72 hours at 2%(v/w) and there were no significant differences between 1%(v/w) and 2%(v/w) inoculum concentrations.

• Journal of IKEEE
• /
• v.15 no.1
• /
• pp.37-42
• /
• 2011

In this paper, the high-voltage novel devices have been fabricated by 0.35 um BCD (Bipolar-CMOS-DMOS) process. Electrical characteristics of 20 V level BJT device, 30/60 V HV-CMOS, and 40/60 V LDMOS are analyzed. Also, the vertical/lateral BJT with the high-current gain and LIGBT with the high-voltage are proposed. In the experimental results, vertical/lateral BJT has breakdown voltage of 15 V and current gain of 100. The proposed LIGBT with the high-voltage has breakdown voltage of 195 V, threshold voltage of 1.5 V, and Vce, sat of 1.65 V.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.40 no.1
• /
• pp.1-10
• /
• 2003

Device characteristics of the Metal-Ferroclecric-Semiconductor FET(MFSFET) are simulated in this study. The field-dependent polarization model and the square-law FET model are employed in our simulation. C-V$_{G}$ curves generated from our MFSFET simulation exhibit the accumulation, the depletion and the inversion regions clearly. The capacitance, the subthreshold and the drain current characteristics as a function of gate bias exhibit the memory windows are 1 and 2 V, when the coercive voltages of ferroelectric are 0.5 and 1 V respectively. I$_{D}$-V$_{D}$ curves are composed of the triode and the saturation regions. The difference of saturation drain currents of the MFSFET device at the dual threshold voltages in I$_{D}$-V$_{D}$ curve is 1.5, 2.7, 4.0, and 5.7 ㎃, when the gate biases are 0, 0.1, 0.2 and 0.3V respectively. As the drain current is demonstrated after time delay, PLZT(10/30/70) thin film shows excellent reliability as well as the decrease of saturation current is about 18 % after 10 years. Our simulation model is expected to be very useful in the estimation of the behaviour of MFSFET devices.T devices.

• Journal of IKEEE
• /
• v.25 no.3
• /
• pp.511-516
• /
• 2021

The electrical characteristics of AlGaN/GaN/HEMT and MOSHFETs with NiO were studied. The threshold voltage of NiO MOSHFET revealed positive shift of +1.03 V than the -3.79 V of HEMT and negative shift of -1.73 V for SiO₂ MOSHFET. Also, NiO MOSHFET showed better linearity in drain current corresponding to gate voltage and higher transconductance at positive gate voltage than the others. The response of gate pulse with base voltage of -5 V was different for both transistors as HEMT showed 20 % drain current decrease at the frequency range of 0.1 Hz~10 Hz and NiO MOSHFET decreased continuously above 10 Hz.