한국전기전자재료학회:학술대회논문집 (Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference)

한국전기전자재료학회 (The Korean Institute of Electrical and Electronic Material Engineers)
권호 표지

채널크기가 비휘발성 SNOSFET 기억소자의 동작특성에 미치는 효과

Effect of channel size on characteristics of Non-volatile SNOSFET Memories

  • 이홍철 (광운대학교 대학원 전자재료공학과) ;
  • 조성두 (광운대학교 대학원 전자재료공학과) ;
  • 이상배 (광운대학교 대학원 전자재료공학과) ;
  • 서광열 (광운대학교 대학원 전자재료공학과)
  • 발행 : 1991.10.01

⟨ 이전 논문 다음 논문 ⟩

초록

Non-volatile SNOSFET memory devices using CMOS 1Mbit design rule(1.2$\mu\textrm{m}$), whose channel width and length are 15${\times}$1.5$\mu\textrm{m}$, 15${\times}$1.5$\mu\textrm{m}$, 2.0${\times}$15$\mu\textrm{m}$ and length are 15${\times}$1.7$\mu\textrm{m}$, respectivley, were fabricated. And the transfer, Id-Vd and switching characteristics of the devices were investigated. As a result, the 15${\times}$1.5$\mu\textrm{m}$ device was good in the transfer characteristics and the switching characteristics were favourable, which had $\Delta$V$\sub$TH/=6.3V by appling pulse voltage of V$\sub$w/=+34V, Tw=50msec.

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