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Leakage Current and Threshold Voltage Characteristics of a-Si:H TFT Depending on Process Conditions  

Yang, Kee-Jeong (Department Of Chemical Engineering, Kwangwoon University)
Yoon, Do-Young (Department Of Chemical Engineering, Kwangwoon University)
Publication Information
Korean Chemical Engineering Research / v.48, no.6, 2010 , pp. 737-740 More about this Journal
Abstract
High leakage current and threshold voltage shift(${\Delta}Vth$) are demerits of a-Si:H TFT. These characteristics are influenced by gate insulator and active layer film quality, surface roughness, and process conditions. The purpose of this investigation is to improve off current($I_{off}$) and ${\Delta}V_{th}$ characteristics. Nitrogen-rich deposition condition was applied to gate insulator, and hydrogen-rich deposition condition was applied to active layer to reduce electron trap site and improve film density. $I_{off}$ improved from 1.01 pA to 0.18 pA at $65^{\circ}C$, and ${\Delta}V_{th}$ improved from -1.89 V to 1.22 V.
Keywords
a-Si:H TFT; Leakage Current; Threshold Voltage Shift; LCD; Photo Current;
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  • Reference
1 Stemi, LCD-PDP-OLED Materials & Components Market Forecast, 15(2005)
2 Stemi, Next Generation Display Market Forecast, 83(2004).
3 Tsukada, T., "TFT/LCD: Liquid-Crystal Display Addressed by Thin-Film, Transistors," Jpn. Tech. Rev., 29, 66-73(1996).
4 Staebler, D. L. and Wronski, C. R., "Reversible Conductivity Changes in Discharge-Produced Amorphous Si," Appl. Phys. Lett., 31, 292-294(1977).   DOI
5 Powell, M. J., "The Physics of Amorphous-Silicon Thin-Film Transistors," IEEE Conf. on electron Devices, 36(12), 2753-2763 (1989).
6 Lebrun, H., Szydlo, N. and Bidal, E., "Thereshold-Voltage Shift of Amorphous-Silicon TFTs in Integrated Devices for Active-matrix LCDs," SID2003, 539-542(2003).
7 Powell, M. J., "Charge Trapping Instabilities in Amorphous Silicon- Silicon Nitride Thin-Film Transistors," Appl. Phys. Lett., 43, 597-599(1983).   DOI